TAA 521 A Search Results

74std

Abstract: aval PKW 1000 bytek TAA 521 versatest 2100 elan digital systems cmos 4000 series FM27040
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C040 Product: 4 Mbit UV EPROM Organization: Technology: 512K x 8 CMOS Process: Die Size: Passivation: TS55 145.1 X 201.9 mils

m 9835

Abstract: trasistor bytek bytek Programmers 11801 aval PKW 1000 aval pkw 3000 TAA 521 TAA 521 A fairchild reliability report transistor
Contextual Info: Fairchild Semiconductor Salt Lake 3333 West 9000 South West Jordan, UT 84088-8838 Fax: 1.801.562.7500 Qualification and Characterization of the FM27C010 Product: 1 Mbit UV EPROM Organization: Technology: 128k x 8 CMOS Process: Die Size: Passivation: TS55 91.2 x 136.2 mils

data sheet ic 7483

Abstract: pin diagram for IC 7483 ttl 7483 FULL ADDER 7483 IC 7483 full adder IC 7483 application of ic 7483 Datasheet of IC 7483 pin diagram for IC 7483 xor 7483 adder
Contextual Info: June 1996, ver. 1 Introduction Understanding FLASHlogic Timing Application Note 79 Altera devices provide device performance that is consistent from simulation to application. Before programming or configuring a device, you can determine the worst-case timing delays for any design. You can

KMM59256BN

Abstract: KM44C256BJ
Contextual Info: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­

bt dof

Contextual Info: •HYUNDAI HYM536410 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ and four HY514100A In 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 ^uF decoupling

Contextual Info: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: FUJITSU MICROELECTRONICS 47E D Marchi 990 Edition 2.2 DATA SHEET 3 7 4 ^ 2 OOnSll 1 • FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as

Contextual Info: H Y 5 1 V 4 2 6 0 B •HYUNDAI S e r ie s 256KX 16-bit CMOS DRAM with 2 CAS PRELIMINARY DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CM OS process technology and advanced circuit design technique to achieve

Contextual Info: PRELIM INARY DATA S H E E T NE C MOS INTEGRATED CIRCUIT M C -4 2 1 0 0 0 A A 6 4 F B 1M -W O R D B Y 64-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421 OOOAA64FB is a 1 048 576 words by 64 bits dynamic RAM module on which 4 pieces of 16M DRAM ¿¿PD 4218160 are assembled.

Contextual Info: O K I Semiconductor MSM5 1 4 1 90/SL_ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM514190/SL is OKI's CMOS silicon gate process technology.

maa 502

Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik

Contextual Info: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: DALLAS s e m ic o n d u c t o r D S 1643/D S 1 6 4 3 LPM Nonvolatile Timekeeping RAM FEATURES PIN ASSIGNMENT • Form, fit, and function compatible with the MK48T08 Timekeeping RAM • Integrated NV SRAM, real time clock, crystal, power fail control circuit and lithium energy source

MH1M645CXPJ-6

Abstract: M5M418165
Contextual Info: MITSUBISHI LS Is DRAM MODULE MH1 M645CXPJ-6.-7 HYPER PAGE MODE 67108864-BIT (1048576-WQRD BY 64-BIT) DYNAMIC RAM DESCRIPTION The MH1M645CXPJ is 1048576-word x 64-bit dynamic RAM module. This consists of four industry standard 1M x 16 dynamic RAMs in SOJ and three industry standard input

Contextual Info: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.

Contextual Info: IB M 1 1 D 2 3 2 0 H 2M x 32 DRAM Module Features • 72-Pin Single-ln-Une Memory Module Low current consumption • Performance: All inputs & outputs are fully TTL & C M O S compatible -60 ; W c : RAS Access Time tcAC CAS Access Time i -70 60ns i 70ns Fast Page Mode access cycle

Contextual Info: KM44V16100AK CMOS D R A M ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: jm ÆF n k k CMOS SRAM 1M-BIT 128K X 8 wmuMMhm N541024 • Features • CM OS SRAM organized as 131,072 X 8bits • S in g le+ 5 .0 v (± 1 0 % ) Power Supply • High Speed A ccess tim e : 15/17/20/25ns • Operating Temperature : -40°C to 85°C • Low power operation

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _/ ¿¿PD424400-L 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿iPD424400-L is a 1 048 576 words by 4 bits dynamic CMOS RAM. The fast page mode capability realize high speed access and low power consumption.

bPA20

Contextual Info: •HYUNDAI H Y 5 1 V 1 7 1 0 0 A S e r ie s 16M x 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V17100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs

HM62256LP-12

Abstract: hm62256 hm62256lfp10t 62256 hitachi HM62256LP-15 HM62256LFP hm62256lp HM62256LP-15SL HM62256LFP12T HM62256P-8
Contextual Info: HM62256 Series Maintenance only 32768-word x 8-bit High Speed CMOS Static RAM Features High speed: Fast access time 85/100/120/150 ns max Low power standby and low power operation — Standby: 200 nW (typ)/ 10 |iW (typ) (L-/L-SL-version) — Operation: 40 mW (typ) ( / = 1MHz)