TAA 293 A Search Results

colour tv circuit diagram

Abstract: colour tv power supply circuit diagram colour television power circuit diagram TAA 293 matrix COLOUR TV SCHEMATIC DIAGRAM 630S 630-S TAA630S colour television schematics colour tv circuit
Contextual Info: TAA 630S LINEAR INTEGRATED CIRCUIT SYNCHRONOUS DEMODULATOR FOR PAL COLOUR TV SETS The TAA 630 S is a silico n m on olithic integrated c irc u it in a 16-lead dual in -lin e plastic package. It incorporates the follow ing fun ctions: — active synchronous dem odulators fo r F B-Y and ± F (R-Y) signals

Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 FEATURES: • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2103  131,072 x 18/262,144 x 9 IDT72V2113  262,144 x 18/524,288 x 9

IDT72V2103

Abstract: IDT72V2113 BC100-1
Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 131,072 x 18/262,144 x 9 262,144 x 18/524,288 x 9 FEATURES: • • • • • • • • • • • • • Choose among the following memory organizations: IDT72V2103 ⎯ 131,072 x 18/262,144 x 9 IDT72V2113 ⎯ 262,144 x 18/524,288 x 9

Contextual Info: a CD © rs— LD 3 -3 C JE A TERMINAL ' 0.8 ID CM (tAA) LD 6 A D tE NOTES I. (iESTWMATERIAL I lOvIvST : E P S . U L 9 4 V - 0 3 - 2.CJL I UyW M ( t = 0 . 3 2 ) A 'ZT I i lt 2.4 3 ,.3,X7'7 =L I UCraiN ( t = 0 . 2 ) >20+ I §§3 'T'+ 3.75 0.4 E (PITCH)

Contextual Info: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CM O S): 100 mA (Max.) Operating KM68V257C-15 : 90 mA (Max.)

514402A

Abstract: 26-PIN ZIP20-P-400-W1 5V110 5424G
Contextual Info: O K I S em iconductor M SM 514402A /A L_ 1,048,576-Word x 4-B it DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.

Contextual Info: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM641003 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The KM641003 uses four common input and output lines and has an output enable pin which operates

KM641003J-15

Abstract: KM641003J-20
Contextual Info: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)

Contextual Info: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process

RA5B

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8M x32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V803A consists of four CMOS

72V273

Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 IDT72V223, IDT72V233 IDT72V243, IDT72V253 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 IDT72V263, IDT72V273 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9 IDT72V283, IDT72V293

Contextual Info: 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9

IDT72V223

Abstract: IDT72V233 IDT72V243 IDT72V253 IDT72V263 IDT72V273 IDT72V283 IDT72V293 72V273
Contextual Info: PRELIMINARY 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9

44C160

Contextual Info: KM44C16004A, KM44C16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data Out M ode CM O S DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. ,

Contextual Info: •HYUNDAI HYM532256 Series SEMICONDUCTOR 256KX 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532256 is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

ca5J

Contextual Info: DRAM MODULE KMM332V803AS-L KMM332V803AS-L Fast Page Mode 8Mx32 Based on 8Mx8, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTION FEATURES The Sam sung KM M 332V803A is a 8M bit x 32 Dynamic RAM high density memory module. The • Part Identification

Contextual Info: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)

Contextual Info: •HYUNDAI HY53C256 Series SEMICONDUCTOR 256K X 1-bit CMOS DRAM DESCRIPTION The HY53C256 is fast dynam ic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.

Contextual Info: “H Y U N D A I HYM536A410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536A41OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400A in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for

A16Q2

Contextual Info: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM

Contextual Info: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe

Contextual Info: ^E D I _ EDI81256C Electronic Designs Inc« High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS, High Speed Monolithic Features The ED181256C is a 262,144 bit high performance, tow 256Kx1 bit CMOS Static power CMOS Static RAM organized as 256Kx1.

Contextual Info: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)