TAA 141 Search Results

Contextual Info: TAA Compliant SmartPro Tower UPS - Intelligent, line-interactive network power management system MODEL NUMBER: SMART1050SLTAA Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases 1.05kVA / 1050VA line interactive tower UPS, Sine wave output

TAA 141

Abstract: AVX taa TAA CAPACITOR DD139 MIL-C-39003 GB0002
Contextual Info: Hermetic Axial Capacitors TAA Series SOLID TANTALUM HERMETICALLY SEALED AXIAL LEADED CAPACITORS CASE DIMENSIONS: L2 millimeters inches Polarity Mark + TAA: Fully hermetically sealed, of rugged construction and high reliability for use in military and professional equipment.

Contextual Info: Hermetic Axial Capacitors TAA Series SOLID TANTALUM HERMETICALLY SEALED AXIAL LEADED CAPACITORS CASE DIMENSIONS: L2 millimeters inches Polarity Mark + TAA: Fully hermetically sealed, of rugged construction and high reliability for use in military and professional equipment.

Contextual Info: Tripp Lite 1111 West 35th Street Chicago, IL 60609 USA Telephone: + 773 869 1234 E-mail: saleshelp@tripplite.com Model #: SMART1050SLTAA TAA Compliant SmartPro Tower UPS - Intelligent, line-interactive network power management system Highlights Federal Trade Agreements Act / TAA Compliant for GSA Schedule purchases

CY27H512

Contextual Info: fax id: 3020 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected

CY27H512-25JC

Abstract: CY27H512 CY27H512-25ZC 27H512-25 27H512-30 H5121 H5128
Contextual Info: 1CY 27H5 12 CY27H512 PRELIMINARY 64K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

h2566

Abstract: H2567 H2563 H2565 H256 H2568 H256-4 CY27H256 CY27H256-25JC CY27H256-25ZC
Contextual Info: fax id: 3014 1CY 27H2 56 CY27H256 32K x 8 High-Speed CMOS EPROM Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: 7C101A: 11-25-91 Revision: Thursday, February 18,1993 CY7C101A CY7C102A k ' Vwt S3 « 3 PRELIMINARY 7J= CYPRESS SEMICONDUCTOR 256K x 4 Static RAM with Separate I/O Features Functional Description • Highspeed — tAA = 12 ns • Transparent write 7C101A

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

IBM11M32735B

Abstract: IBM11M32735C
Contextual Info: IBM11M16730CB16M x 72 E13/11, 3.3V, Au. IBM11M32735B IBM11M32735C 32M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module - • 32Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: tRAC tCAC tAA tRC tHPC • •

b1099

Abstract: B-10-99
Contextual Info: CY7B1099 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected • Output enable OE feature

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 32Mx72 Dual Bank Fast Page Mode DIMM • Performance: -60 Wc RAS Access Time 60ns toAC CAS Access Time 20ns tAA Access Time From Address

Contextual Info: 7C1009: 1 1 -2 5 -9 1 Revision: Monday, January 11,1993 — ^ MAR S 3 1993 PRELIMINARY CYPRESS SEMICONDUCTOR CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW

Contextual Info: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description

CY7C1009

Abstract: 7C1009 A14C
Contextual Info: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance

Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

SO-DIMM 144-pin

Contextual Info: IBM11T1640L 1M x 64 144 PIN SODIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fcAC CAS Access Time 15ns 20ns tAA Access Time From Address 30ns

Contextual Info: C Y7C 1512 64K x 8 Static RAM and three-state drivers. This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected. Features • High speed — tAA = 1 5 ns • CMOS for optimum speed/power • Low active power

Contextual Info: = - CY7B164 CY7B166 ^ -16,384 x 4 Static RAV RAM ¿s CYPRESS SEMICONDUCTOR Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output Enable OE feature (7B166)

Contextual Info: 7c10 0 6 :1 1-25-91 Revision: Tuesday, December 22,1992 CY7C1006 PRELIMINARY CYPRESS sÈr SEMICONDUCTOR 256K x 4 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power The CY7C1006 is a high-performance CMOS static RAM organized as 262,144

CY7B166

Abstract: CY7B164 7B164 CY7B166-12PC a13c 12LMB CY7B16 7B166 8J45
Contextual Info: CY7B164 CY7B166 CYPRESS SEMICONDUCTOR 16K x 4 Static R/W RAM Features Functional Description • Ultra high speed — tAA = 8 ns • Low active power — 700 mW • Low standby power — 250 mW • BiCMOS for optimum speed/power • Output enable OE feature (7B166)

Contextual Info: IBM11M2640H2M x 6411/10, 5.0V, Au. IBM11M1640L 1M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time 20ns 25ns tAA

Contextual Info: CY7B1094 CY7B1095 CY7B1096 a. PRELIMINARY s s s r^ Y P P F C ;9 y SEMICONDUCTOR Features • High speed — tAA = 6 ns • BiCMOS for optimum speed/power • Low active power — 900 mW • Low standby power — 350 mW • Automatic power-down when deselected

R5C833

Abstract: pinout dell battery BCM5880 schematic lcd inverter dell SLG8LP554VTR SLG8LP554 schematic diagram lcd monitor dell camera pinout JAL10 broadcom BCM5880
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL10 PCB NO : LA4151P DAA00000Q1L BOM P/N : 1 M09 Lola UMA uFCBGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-07-4 REV : 1.0 @ : Nopop Component 1@ : Use TCM only 2@ : Use TAA only 3@ : Use BROADCOM TPM only