TA 8893 Search Results

DSP56002FC40

Abstract: A0655 00FF DSP56002 LS09 MC68000 DSP56002RC40 01CC00 M52DC BR a94
Contextual Info: Design Considerations Heat Dissipation Design Considerations outside ambient ΘCA . These terms are related by the equation: Heat Dissipation The average chip junction temperature, TJ, in °C, can be obtained from: TJ = TA + (PD x ΘJA) (1) Where: TA = ambient temperature, °C

s46 hall

Abstract: AL233 hall s41 AL205 s05 hall AL207 XCB56007 s41 hall IDT74FCT821A MCM6206
Contextual Info: Design Considerations Heat Dissipation Power, Ground, and Noise Design Considerations Heat Dissipation The average chip junction temperature, TJ, in °C, can be obtained from: TJ = TA + PD x ΘJA Where: NOTE: Table 8 (page 17) contains the package thermal

3TC14

Abstract: CM6206 L23C SE757 AL207
Contextual Info: Order this document by DSP56004/D M OTOROLA • SEMICONDUCTOR T E C H N IC A L D A TA Advance Information 24-Bit General Purpose Digital Signal Processor DSP56004 Rev.1 Plastic Quad Flat Pack QFP Available in an 80-pin, small footprint, surface mount package.

toshiba 8893

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR JS8893-AS TECHNICAL DATA FEATURES: • ■ ■ ■ ■ HIGH POWER PidB = 24.0 dBm at f = 23 GHz HIGH GAIN GldB = 6 . 0 dB at f = 2 3 GHz SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM RF PERFORMANCE SPECIFICATIONS Ta = 25° C

JS8893-AS

Abstract: k-band amplifier
Contextual Info: TOSHIBA MICROWAVE MICROW AVE POWER GaAs FET S E M IC O N D U C T O R JS8893-AS TECHNICAL DATA FEATURES: • ■ SUITABLE FOR K-BAND AMPLIFIER ION IMPLANTATION CHIP FORM HIGH POWER PldB = 24.0 dBm at f = 23 GHz HIGH GAIN G1 d B = 6 -0 dB at f = 2 3 GHz RF P E R F O R M A N C E S P E C IF IC A T IO N S Ta = 2 5 ° C

J-STD-002B

Abstract: V40120C VI40120C
Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses

J-STD-002

Abstract: V40120C VI40120C V4012
Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

VB40120C

Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

J-STD-002

Abstract: V40120C VI40120C VB40120C
Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

VB40120C

Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

Contextual Info: New Product V40120C, VF40120C, VB40120C & VI40120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power

Contextual Info: V40120C, VF40120C, VB40120C, VI40120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses

MARKING CODE S5B

Abstract: S5B MARKING GENERAL SEMICONDUCTOR MARKING smc
Contextual Info: S5A thru S5M New Product Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V Tj max. 150 °C DO-214AB (SMC) Features Mechanical Data • •

GENERAL SEMICONDUCTOR MARKING RJ

Abstract: VISHAY MARKING RJ DO-220AA JESD22-B102D J-STD-002B
Contextual Info: RS1PB thru RS1PJ New Product Vishay General Semiconductor High Current Density Surface Mount Glass-Passivated Fast Switching Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction

Contextual Info: S5A thru S5M New Product Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 50 V to 1000 V IFSM 100 A IR 10 µA VF 1.15 V Tj max. 150 °C DO-214AB (SMC) Features Mechanical Data • •

VISHAY MARKING RJ

Abstract: GENERAL SEMICONDUCTOR MARKING RJ 06
Contextual Info: RS1PB thru RS1PJ New Product Vishay General Semiconductor High Current Density Surface Mount Glass-Passivated Fast Switching Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction

Contextual Info: S5A thru S5M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

Contextual Info: RS1PB thru RS1PJ New Product Vishay General Semiconductor High Current Density Surface Mount Glass-Passivated Fast Switching Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction

JESD22-B102D

Abstract: J-STD-002B
Contextual Info: S5A thru S5M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

DO-220AA

Abstract: JESD22-B102D J-STD-002B RS1pB
Contextual Info: New Product RS1PB thru RS1PJ Vishay General Semiconductor High Current Density Surface Mount Glass-Passivated Fast Switching Rectifier eSMP TM FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction

Contextual Info: S5A thru S5M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability

VISHAY MARKING RJ

Contextual Info: New Product RS1PB thru RS1PJ Vishay General Semiconductor High Current Density Surface Mount Glass-Passivated Fast Switching Rectifier eSMPTM FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction