TA 7230 P Search Results

h221

Abstract: TA 7230 P 8X8 INC SZB6120 iit inc acelp
Contextual Info: Design-In Guide for JADE AN 08/97 Audio Ringing Codec Filter Basic Function PSB 7230 The PSB 7230 Joint Audio Decoder Encoder for Analog Videophones JADE AN is a device wich implements voice compression algorithmus using the Algebraic Code Excited Linear Prediction (ACELP) and the Multi-Pulse Maximum Likelihood

Bubble Memory

Abstract: TA 7230 P intel 8085 Intel BUBBLE 7230 intel 7110 intel 8088 memory memory bubble INTEL 7230 S6590
Contextual Info: 7230 CURRENT PULSE GENERATOR FOR BUBBLE MEMORIES TTL Compatible Inputs Provides all Pulses for IM’s Bubble Memories — Replicate, Swap, Generate, Boot Replicate and Bootswap Current Sink Outputs Designed to Directly Drive Bubble Memory • Direct Interface to Bubble Memory

DATA SHEET 2025h

Abstract: siemens SID 801 pdf working OF IC 2025h 2025h G.723 ic codec four channel decoder ev1 hints IND SMD EM1 taa 723 CA10
Contextual Info: ICs for Communications Joint Audio Decoder-Encoder for Analog Videophone JADE AN PSB 7230 Version 2.1 Data Sheet 1998-07-01 DS 1 PSB 7230 Revision History: Current Version: 1998-07-01 Previous Version: Prelimiinary Data Sheet 02.97 V 1.2 Page Page (in previous (in current

IC AN 7220

Abstract: BPK-72 Bubble Memory 8080 intel microprocessor pin diagram BPK-70 Bubble Memory BPK72 BPK70 BPK70A Bubble Memory intel 80286 design kit IC 7905 pin diagram
Contextual Info: [P^ILORSIOMÀW ¡n tg l BPK 70 1MBIT BUBBLE MEMORY SUBSYSTEM BPK 70-1 0 °C to 75°C BPK 70-4 10°C to 5 5 °C BPK 70-5 - 2 0 ° C to 85°C 1 Mbit 128K Bytes Non-volatile, Solid-state, Read/Write Bubble Memory Subsystem Interfaces to Host Microprocessor

8086 8257 DMA controller interfacing

Abstract: interfacing of 8257 devices with 8085 interfacing of 8257 with 8086 interfacing of 8237 with 8086 IC AN 7220 IC AN 7220 b interfacing of 8237 with 8085 8086 8257 DMA controller intel 8085 pin assignments ic dma 8237 8088
Contextual Info: in te T MSWMKSIS ONIFOäßMirO ßO 7220 BUBBLE MEMORY CONTROLLER • DMA Handshake Capability 8080/8085/8088/8086 Microprocessor Interface ■ Single or Multiple Page Block Transfers Interfaces Up to Eight Bubble Storage Subsystems ■ HMOS Technology ■ Standard 40-Pin Dual In-Line Package

C7557 Software

Abstract: high frequency linear cmos IMAGE SENSOR G7233 INGaAS CCD long range detector in circuit
Contextual Info: InGaAs Linear Image Sensors_ Spectral Response Range: 0 .9 to 2 .6 jim Incorporating InGaAs array C-MOS readout chip in one package The InGaAs linear image sensors are self-scanning photodiode arrays designed specifically for detectors in near infrared multichannel

ic cd 6283 diagram

Abstract: LT 7220 cd 6283 ic circuit diagram BPK-72 Bubble Memory BPK72 BPK-70 IC cd 6283 cs E7250 Y7220 bubble memory
Contextual Info: M i n IÎL ÎM ÎM W y 7220 CONTROLLER FOR 1MBIT BPK 70A BUBBLE MEMORY SUBSYSTEM 7220-1 7220-4 10-C To 55°C 7220-5 -2 0 ° C To 85°C 0* To 75 C Provides Interface between Host Microprocessor and 1 Mbit Bubble Subsystems Interfaces to 8080/85/86/88/186/286

Contextual Info: 45E D • ^0^7230 0017754 1 IT0S4 TOSHIBA TRANSISTOR 2N4124 SILICON NPN EPITAXIAL TYPE PCT PROCESS TO SHI BA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICB0= 50nA(Max.) lEBO=50nA(Max.)

Contextual Info: TLN115A GaAs INFRARED EMITTER TLN115A U nit in mm INFRARED LED FOR REM O TE CONTROL SYSTEM REM O TE CONTROL SYSTEM • • • • High radiant intensity : l E = 26m W /sr (TYP.) Wide half value angle : 8 ^ = ±21° (TYP.) Excellent linearity of radiant intensity and modulation by pulse

TS01 DIODE

Contextual Info: PHOTO RELAY TLP296G TENTATIVE DATA TLP296G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP package. The TLP296G is a bi-directional switch which can replace mechanical

beisensors

Contextual Info: 7 / 8 " TO 3 " DIAMETER SERVO MOUNT WIREWOUND SINGLE-TURN PRECISION POTENTIOMETERS SERVO M O U N T/BA LL BEARING MODEL 1701 SE R V O M O D E L 1701 ELECTRICAL 356° ± 1 ° Actual Electrical Travel Normal Resistance Range 100S2 to 75K Extended Resistance Range 1

Contextual Info: 7 / 8 " TO 3 " DIAMETER SERVO MOUNT WIREWOUND SINGLE-TURN PRECISION POTENTIOMETERS SERVO M O U N T/BA LL BEARING MODEL 1801 SERVO MODEL 1801 ELECTRICAL O -H O co in CO Actual Electrical Travel Normal Resistance Range Extended Resistance Range 1 Resistance Tolerance: Standard %

Contextual Info: TOSHIBA DISCRETE/OPTO 4SE » • ^0^7250 □ GlV'ìTfl 1 ■ T 0 S 4 TOSHIBA FIELD EFFECT TRANSISTOR_ Y T F P 9*59 SILICON N CHANNEL MOS TYPE (ir - YTFPZoZ MOSI) INDUSTRIAL APPLICATIONS Unit In mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: PRECISION VOLTAGE REGULATOR NJM723 The NJM723 is a Precision Monolithic Voltage Regulator. The device consists of a temperature-compensated reference amplifier, error amplifier, power-series pass transistor and current-limit circuitry. Additional NPN or PNP pass elements

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P idB = 39 dBm at 4.4 GHz to 5.0 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P ide = 42.5 dBm at 5.0 GHz to 5.3 GHz

TLP647G

Abstract: TLP6476
Contextual Info: GaAs IRED S PHOTO-THYRISTOR TLP6476 TLP6 47 G OFFICE M ACHINE. HOUSEHOLD USE EQUIPM ENT. SOLID STATE R ELA Y. SWITCHING POW ER SUPPLY. The TOSHIBA TLP647G consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power * P-idB = 45 dBm at 4.4 GHz to 5.0 GHz

Contextual Info: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-|dB = 39 dBm at 7.7 GHz to 8.5 GHz

VP0340N1

Abstract: VP0335 VP0340 VP0335N5 VP0335ND VP0340N5 VP0340ND
Contextual Info: VP0340 E– T E L O S – OB VP0335 VP0340 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-3 TO-220 Die† -350V 6.0Ω -1.5A — VP0335N5 VP0335ND -400V 6.0Ω -1.5A VP0340N1

VP0340N1

Abstract: VP0340N5 VP0340 VP0340ND TO2I 7232 diode
Contextual Info: Supertex inc. VP0340 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / R d S ON Order Num ber / Package I d (ON) b v dgs (max) (min) TO-3 TO-220 Diet -400V 6.0Î2 -1.5A VP0340N1 VP0340N5 VP0340ND iM IL visual screening available

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power ' P-idB = 36 dBm at 4.4 G H z to 5.0 GHz

HJM723M

Abstract: NJM723 NJM723V 723D CRF5 NJM723D
Contextual Info: PRECISION VOLTAGE REGULATOR NJM723 T he NJM723 is a Precision M onolithic Voltage R egulator. T he device consists of a tem perature-com pensated reference am plifier, erro r am plifier, pow er-series pass transistor and current-lim it circuitry. A dditional NPN or PN P pass elem ents

intel 7110

Abstract: vmos fet intel 8085 INTEL 7254 vmos BPK70 DIODE S4 3a vmos to bubble memories 7254 coil driver
Contextual Info: intei 7254 QUAD VMOS DRIVE TRANSISTORS FOR BUBBLE MEMORIES Designed to Drive X and Y Coils of 7110 Bubble Memories • Operates from V qd Only No Bias Currents Required ■ VMOS FET Technology Fast Turn-on and Turn-off — 30 ns Maximum ■ N-Channel and P-Channel Transistors