TA 66 GF 25 Search Results

pa 66 gf

Abstract: M36W432BG M36W432TG AI07927 PA 6.6 GF 13
Contextual Info: M36W432TG M36W432BG 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT – 32 Mbit (2Mb x 16), Boot Block, Flash Memory – 4 Mbit (256Kb x 16) SRAM Memory

UTILUX

Contextual Info: n THIS DRAWING IS UNPUBLISHED. E COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC DIST REVISIONS u ALL RIGHTS RESERVED. LTR DESCRIPTION DWN DATE APVD Dl A NÛ Ö SECTION A - A A B, NOTES: INSULATOR DESIGNED FOR USE WITH NYLON 66 4.8 QC R E C E P TA C LE TYCO P /N 1 6 2 7 0 9 9

ta 8446

Abstract: etw 3700
Contextual Info: . 050 " 1.27 MM CONTACT SPACING CARDEDGE CONNECTORS DUAL READOUT, BELLOW FORM CONTACTS * F 0 R 1/16(1.6) PRINTED CIRCUIT BOARD 20,28,44,80,100,110,128,132 CONTACTS * -Available for 1/32(.79) Board NO. OF DUAL CONTACTS A B C D E 10/10 .450 (11.43) .625 (15.88)

toolings

Abstract: leaf spring design Double Row, 40 Positions, 2.54 mm 0.1 in., Right Angle Header TA-895 76347-403LF 7731-1 Series HT-0095 FCI 69168 semi catalog 47439-002
Contextual Info: S TIME adtimes D LEA basicsle T OR .com/ H S .fci w ww W E N Product Catalog www.fci.com/basics 1 FCI: SETTING THE STANDARD FOR CONNECTORS MO With operations in 30 countries and sales of 1.3 billion euros in 2007, FCI is a leading manufacturer of connectors.

Contextual Info: 5 Series 2.00mm pitch wire to board connector A ssem bly L ayout S tra ig h t Angle V—Type] 4.0 « 01 TO Right Angle (R—Type' Specifications: Poles P itc h b e tw e e n poles R a te d Voltage R a te d C u rre n t W ith sta n d Voltage C o n ta c t R e s ista n c e

256QAM

Abstract: 37dBmV
Contextual Info: TGA2807-SM CATV Linear Amplifier Key Features • • • • • • • • • • Measured Performance Primary Applications Small Signal Gain 75 Ω including Balun Loss, Vdd = 6 V, Idd = 318 mA 25 • • S21 (dB) 20 CATV EDGE QAM Cards CMTS Equipment

BFR92P

Contextual Info: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.

MT 7201

Abstract: MT 7811
Contextual Info: 6100-200 .1 0 0 " 2.54 MM CONTACT SPACING CARDEDGE CONNECTORS DUAL READOUT FOR 1/16(1.6) PRINTED CIRCUIT BOARD .025 (.64) SO. OR .026 (.66) RND. TERM N. 12 THRU 200 CONTACTS Series 6100-200 is described more comprehensively in our“ 6100-200" brochure NO. OF

MGFK30M4045

Contextual Info: ¿.MITSUBISHI MGFK30MXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFK30MXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • Flip-chip mounted • High output power

MOSFET

Abstract: 2N6788
Contextual Info: <Se.mL~C.onau.ctoi. ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U'S'A TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201)376-8960 IM-CHANNEL POWER MOSFETa Absolute Maximum Ratings PWTMttf VDS VDGR ID ^ TC * 26°C ID ffl TC • 100°c Inu VGS >S ISM PD « TC - 26«C

BFP29

Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Contextual Info: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700

d2172

Abstract: D2374 Intel 82420 30 pin 9-bit simm memory 91/157/AET
Contextual Info: C Y M 9 2 3 0 PRELIMINARY • =CYPRESS — 82420 PCIset-Compatible Level II Cache Modules Features • TTL-compatible inputs/outputs • 128K-byte CYM9230 or 256K-byte (CYM9231) cache moducle organized as 32K by 32 or 64K by 32 • Tag width of 9 bits plus valid bit

PSRAM

Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory

a20202

Abstract: 25p28 84 PIN CERAMIC QUAD FLAT PACK TEXAS INSTRUMENTS LA7292 325-pin 436-Pin ld25 cv ot 112 S20C40 ansi y32
Contextual Info: SMJ320C40 DIGITAL SIGNAL PROCESSOR SGUS017 - OCTOBER 1993 -55°C to 125°C Operating Temperature Range; Class B Processing Highest Performance Floating-Point DSP - 50-ns Instruction Cycle Time: 220 MOPS, 40 MFLOPS, 20 MIPS, 256 Mbytes/s - 60-ns Instruction Cycle Time:

code lock circuit flow chart

Abstract: PSEUDO SRAM M36W432 M36W432B M36W432T
Contextual Info: M36W432T M36W432B 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 4 Mbit (256K x 16 bit) – VDDF = 2.7V to 3.3V ■ – VDDS = VDDQF = 2.7V to 3.3V – VPPF = 12V for Fast Program (optional)

Contextual Info: SSW-224 DC-6 GHz Reflective GaAs SPDT Switch Preliminary Data Features • • • • • Broad Bandwidth: DC to 6 GHz Low Insertion Loss: 1.4 dB Typical at 2 GHz High Isolation: 36 dB Typical at 2 GHz Low Cost Surface Mount Ceramic Package Low DC Power Consumption

M36W432

Abstract: M36W432B M36W432T
Contextual Info: M36W432T M36W432B 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V SRAM ■ 4 Mbit (256K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V ■

ISG56535

Abstract: ISG RF MODULE
Contextual Info: PRELIMINARY DATA SHEET ISG56535 5 TO 65 MHz SILICON CATV 35 dB HYBRID AMPLIFIER FEATURES OUTLINE DIMENSIONS Units in mm [inches] ISG56535 • FLAT RESPONSE FROM 5 TO 65 MHz 45.08 [1.775] MAX • INPUT AND OUTPUT MATCHING TO 75 OHMS: RL = > 20 dB 38.10 ± 0.25 [1.500 ± .010]

Contextual Info: • b 2 4 ^ 02=1 o«eUN»N^v 0017T34 S24 ■ MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFS44V2527 2 .5 ~ 2 .7 G H z BAND 2 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F S 4 4 V 2 5 2 7 is an internally impedance-matched GaAs power F E T especially designed for use in 2 - 5 —2 .7

Contextual Info: A 1 2 5 1 S 6 rÌ6 S 1 .2 5 m m p itc h wire to b o a r d c o n n e c t o r A sse m b ly L a y o u t S t r a i g h t A n g le V—T y p e \ Cl i H Oh R i g h t A n g le ( R - T y p e ) - 3 .3 ^ — J 1 TlO C\? co LO -5.4 REF.-3 .4 1 K 6.2 REF.-H ptH H Ph

IRS26302D

Abstract: 3 phase rectifier circuit diagram igbt gf brake rectifier motor AN1123 3 phase bridge fully controlled rectifier AN-1123 Ground Fault IC irf AN-1123 IRS26302DJ IC A 103 GF
Contextual Info: Data Sheet No. PD 60321 IRS26302DJPBF FULLY PROTECTED 3-PHASE BRIDGE PLUS ONE GATE DRIVER Features • • • • • • • • • • • • • • • • Floating channel designed for bootstrap operation, fully Topology operational to +600 V Tolerant to negative transient voltage – dV/dt immune

EM73P361A

Abstract: EM73P361AAQ EM73P361AH
Contextual Info: EM73P361A 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73P361A is an advanced single chip CMOS 4-bit one-time programming OTP micro-controller. It contains 3K-byte OTP ROM, 52-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/

Contextual Info: SNA-276 DC-6.5 GHz Cascadable GaAs MMIC Amplifier October, 1994 76 Package Features - Cascadable 50-0hm Gain Block - 16dB Gain, +14dBm P1dB - 1.5:1 Input and Output VSWR - Operates from Single Supply - Low Cost Surface-Mount Package Description Stanford Microdevices' SNA-276 is a GaAs monolithic

NJM2274AR

Abstract: NJM2274
Contextual Info: NJM2274A LOW POWER VIDEO AMPLIFIER WITH Y-C MIXER • GENERAL DESCRIPTION The NJM2274A is low voltage operation video amplifier with Y/C mixer and 75-ohm driver. The NJM2274A is suitable for DSC, DVC, CCD camera and other portable video applications. The NJM2274 is 0.5Vp-p input, and The NJM2274A is 1.0Vp-p input.