TA 618 710 Search Results

celeritek amplifier CPA-18-6014

Abstract: CPT-18-6036
Contextual Info: 6.0 to 18.0 GHz Power Amplifiers □ Frequency Coverage: 6-13 GHz 6-18 GHz □ 6-13 GHz, 1 Watt P,'1 dB □ 6-18 GHz, 1 Watt P,"1 dB □ Temperature Compensation □ MIL-STD-883 Screening □ MIL-Q-9858A Quality 8-18 GHz DESCRIPTION C eleritek is the industry leader in broadband highp o w e r a m p lifie rs. T h e 1 w att, 6-18 G H z a m p lifie r uses

Cree optics

Abstract: ra smd
Contextual Info: Cree PLCC4 1-in-1 SMD LED CLM2B-REW/AEW Data Sheet SMD LEDs are packaged in the industry-standard package. These LEDs have high-reliability performance and are designed to work under a wide range of environmental conditions. This high-reliability feature makes

CLM1B

Contextual Info: Cree PLCC2 1 in 1 SMD LED CLM1B-RKW/AKW Data Sheet SMD LEDs is packaged in the industry standard package. These LEDs have high reliability performance and are designed to work under a wide range of environmental conditions. This high reliability feature makes them ideally

Contextual Info: CLD-CT1084.002 PRODUCT FAMILY DATA SHEET Cree PLCC2 1-in-1 SMD LED CLM1B-RKW/AKW PRODUCT DESCRIPTION FEATURES APPLICATIONS SMD LEDs is packaged in the industry • Size mm :3.2 x 2.7 • Light Strip standard package. These LEDs have • Color and Typical Dominant

akw smd transistor

Abstract: PLCC21 DCT108
Contextual Info: Cree PLCC2 1 in 1 SMD LED CLM1B-RKW/AKW Data Sheet SMD LEDs are packaged in the industry-standard package. These LEDs have high reliability performance and are designed to work under a wide range of environmental conditions. This high-reliability feature makes

LM1-UHR1-01-N1

Contextual Info: Cree SMD LED Model # LM1-UHR1-01-N1 Data Sheet 120-degree, 3.2 x 2.7-mm SMT LED in high red color with water transparent Applications • • • • • Indicators Illuminations LCD Backlights Automobile Applications High Red Color Displays Absolute Maximum Ratings TA = 25°C

NE721S01

Abstract: nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922
Contextual Info: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2.0 ± 0.2 2. • LG = 0.8 µm, WG = 330 µm 1 ± DESCRIPTION

MARKING CODE 618 SOT23

Contextual Info: MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS 2.0 AMPS NPN TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector-Emitter Voltage VCEO 30 Vdc

Contextual Info: Platinum DRAGON Enhanced thin film LED Lead Pb Free Product - RoHS Compliant LR W5SN, LA W5SN, LY W5SN Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes SMD-Gehäuse, farbloser klarer Silikon - Verguss • Typischer Lichtfluss: 75 lm (rot),

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No : Date: SPE/LM1- AHR1-11-MT LM1- AHR1-11-MT 01 2005-04-18 Description: 120 Degree 3.2 x 2.8mm Power SMD in High Red Color with Water Transparent *This specification is only for MT*

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No : Date: SPE/LM1-AHR1-11-N1-MT LM1- AHR1-11-N1-MT 01 2006-02-22 Description: 120 Degree 3.2 x 2.7mm Power SMD in High Red Color with Water Transparent *This specification is only for MT*

fujitsu gaas fet

Abstract: FSX027WF
Contextual Info: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz High Power Gain: GidB=10dB(Typ.)@ 8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium

FSX027WF

Abstract: FSX027W 1036 FET
Contextual Info: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets

FSX027WF

Abstract: FUJITSU GaAs FET
Contextual Info: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium

LQFP 216

Contextual Info: HM-RAE001-0305 Physical Random Number Generator RPG100 Features • Generation of high quality physical random numbers for various purposes in wide-ranging applications. • Natural phenomenon in CMOS is used to generate random numbers. • The circuit is composed of only CMOS and no external components are needed.

557 timer connections

Abstract: M68000 MC68340 MC68681
Contextual Info: 11/2/95 SECTION 1: OVERVIEW UM Rev 1 TABLE OF CONTENTS Paragraph Number Page Number Title Section 1 Device Overview 1.1 1.1.1 1.1.2 1.2 1.2.1 1.2.2 1.3 1.3.1 1.3.1.1 1.3.1.2 1.3.1.3 1.3.1.4 1.3.1.5 1.3.1.6 1.3.1.7 1.3.2 1.3.3 1.3.4 1.4 1.5 1.6 1.7 M68300 Family. 1-2

sn 7441

Contextual Info: SUPER LOW NOISE HJ FET FEATURES NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 [im • GATE WIDTH: 280 urn

Contextual Info: SU PER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vd s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz 4 - - -I- .1 1 - r 24 • HIGH ASSOCIATED GAIN:

Contextual Info: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 mA 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: CO 10.5 dB Typical at 12 GHz •o • GATE LENGTH: 0.3 urn

sn 7441

Contextual Info: NEC SUPER LOW NOISE HJ FET FEATURES_ NE33200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 m A 0 75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 nm • GATE WIDTH: 280 |j.m

CD4049UBF

Abstract: dtl ttl logic DIGITAL CROSS-REFERENCE GUIDE CMOS Hex Inverting Buffer D4050B
Contextual Info: CD4049UB, CD4050B August 1998 - Revised May 2004 Data sheet acquired from Harris Semiconductor SCHS046I CMOS Hex Buffer/Converters Applications The CD4049UB and CD4050B devices are inverting and non-inverting hex buffers, respectively, and feature logiclevel conversion using only one supply voltage VCC . The

PCI 6601

Abstract: 974-1021 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90 SSTL-18
Contextual Info: 5. DC & Switching Characteristics SII51005-4.3 Operating Conditions Stratix II devices are offered in both commercial and industrial grades. Industrial devices are offered in -4 speed grades and commercial devices are offered in -3 fastest , -4, -5 speed grades.

Contextual Info: LH0038/LH0038C National Sem iconductor LH0038/LH0038C True Instrumentation Amplifier General Description The IH0038/LH0038C is a precision true instrumentation amplifier TIA capable of amplifying very low level signals, such as thermocouple and low impedance strain gauge out­