TA 0911 . 1 Search Results

G600 mold compound

Abstract: TO263-5L TO252-5L G600 mold compound unisem G600 MIC29302WT mic29302 TO-263-5L 2525l MIC39152
Contextual Info: Micrel TO-263,TO-220,TO-252 Power Packages High Temperature Operating Life +125 deg C, 1000 hours Device D/C Lot No Stress Hrs. Stress Hrs. Stress Hrs. Pkg M/C Assem. Loc Fab SS 168 H 1.0 KH MIC29302 MIC37302 MIC29302 MIC29302 MIC29302 MIC37302 WU WU WU WU

MT3S06T

Contextual Info: TO SH IBA MT3S06T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0.05 • 0.8 ± 0.05 Low Noise Figure : NF = 1.6 dB Vf!F, = 3 V, In = 3 mA, f = 2 GHz IS o i J2 = Q K r\T\ TTicrh (T -ain

1SV228

Contextual Info: 1SV228 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 228 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS • • Low rs : rs = 0.3il Typ. Small Package MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV282

Abstract: C25V
Contextual Info: TO SH IBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 2 CATV TUNING • Unit in mm High Capacitance Ratio : C2V/C25V = 12.5 TYP. 0.6 ± 0.1 ÍN O • Low Series Resistance : rs = 0 .6 0 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

ta 0911 . 1

Contextual Info: 1SV232 TO SH IBA 1 S V2 3 2 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING SILICON EPITAXIAL PLANAR TYPE • High Capacitance Ratio : C2 V / C25 V = 10.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA 1SV286 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 286 CATV CONVERTER 1'st OSC TUNING • • • High Capacitance Ratio : C2V / C20V - 8-9 TYP. Low Series Resistance : rs = 0.730 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV276 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 6 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.0 Typ. Low Series Resistance : rs = 0.220 (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV277 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 7 7 Unit in mm High Capacitance Ratio : C iv /C 4 v = 2.3 Typ. Low Series Resistance : rs = 0.420 (Typ.) Small Package 0 ± 0 .0 5

1SV281

Abstract: 303E toshiba 27c
Contextual Info: 1SV281 TOSHIBA TO S H IB A V AR IA B LE CAPACITAN CE DIODE SILICON EPITAX IAL P LAN AR TYPE 1 SV281 VCO FOR V / U H F B A N D R AD IO • • • High Capacitance Ratio : C i v /C4 v = 2.0 TYP. Low Series Resistance : rs = 0.280 (TYP.) Useful for Small Size Tuner.

Contextual Info: 1SV285 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 28 5 VCO FOR UHF BAND RADIO • • • High Capacitance Ratio : C i v /C4 v = 2.3 TYP. Low Series Resistance : rs = 0.420 (TYP.) Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

1SV231

Abstract: C25V marking Ja diode
Contextual Info: 1SV231 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING SILICON EPITAXIAL PLANAR TYPE 1 SV231 • High Capacitance Ratio : C2 y /C 2 5 V = 15 Typ. • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner. MAXIMUM RATINGS (Ta = 25°C)

VRM 12.5

Abstract: 1SV262 C25V SPICE 2G6
Contextual Info: 1SV262 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 SV2 6 2 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.60 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

27c diode toshiba

Abstract: 1SV283 847E C25V 6685E
Contextual Info: 1SV283 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 283 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

1SV214 spice

Contextual Info: TOSHIBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 2 14 TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.40 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

1SV269

Abstract: 847E C25V
Contextual Info: 1SV269 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE 1 S V2 6 9 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.

Contextual Info: 1SV288 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 288 Unit in mm CATV TUNING + 0.2 1.25-0.1 2-5 ±0.2 1-rl + 0.2 1 .7 -0 .1 • High Capacitance Ratio : C2V/C25V = 16 TYP. • Low Series Resistance : rs = 0.920 (TYP.)

2SC5463

Contextual Info: TO SH IBA 2SC5463 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5463 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure, High Gain. NF=l.ldB, |S2 ie l2 = 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: 1SV279 TOSHIBA TO S H IB A V AR IA B LE CAPACITAN CE DIODE SILICON EPITAX IAL P LAN AR TYPE 1SV 279 VCO FOR V / U H F B A N D R AD IO • • • High Capacitance Ratio : C2v /C;lov = 2.5 TYP. Low Series Resistance : rs = 0.20 (TYP.) Useful for Small Size Tuner.

toshiba 5564

Abstract: 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor
Contextual Info: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)

transistor H1A

Abstract: 2SC5256
Contextual Info: TO SH IBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • Unit in mm 1.6 ± 0.2 : NF = 1.5dB f = 2GHz Low Noise Figure ,0.8 ±0.1, • High Gain : Gain = 8.5dB (f = 2GHz) in o O p tr>

LS 1017

Abstract: MARKING EE 1SV270 303E 27c diode toshiba
Contextual Info: 1SV270 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • High Capacitance Ratio Low Series Resistance Small Package SILICON EPITAXIAL PLANAR TYPE 1 SV270 : CIV / C4V = 2.0 Typ. : rs = 0.28ü (Typ.) MAXIMUM RATINGS (Ta = 25°C)

MT3S07T

Contextual Info: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain 0.8 ± 0.05 : IS o i J2 = Q K r\T\

Contextual Info: 1SV305 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 305 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4 v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 1SV304 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 304 VCO FOR VHF BAND RADIO • • • Small Package High Capacitance Ratio Low Series Resistance : C iv /C 4 v = 3.0 Typ. : rs = 0.270 (Typ.) MAXIMUM RATINGS (Ta = 25°C)