T77 DIODE Search Results

Contextual Info: HVCA HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

Contextual Info: HVGT HV-T77 20kV 5mA HIGH VOLTAGE DIODES Outline Drawings : mm HV-T77 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 3.0 o 0.6 Features

Contextual Info: SKNa 202 Stud Diode Avalanche Diode SKNa 202 8OP2Q:1 ?N2B@ S 677 $ O:&=1:5: %&'5+ K3/ 3(,1(5350 3.+/&,13(Q F:&= 2:1( 8 [D77 ]777 ]T77 ]677 ]D77 ]V77 ?N$8 S T77 $ O01(U CV7W >) S V7 XFQ @HI& T7T¥[D @HI& T7T¥]7 @HI& T7T¥]T @HI& T7T¥]6 @HI& T7T¥]D @HI& T7T¥]V

IRf 444 MOSFET

Abstract: DIODE Z32 irf9z34 IRF9Z30 irf9z34 mosfet IRF z34 MOSFET IRF high current p-channel P-channel power mosfet irf IRF9Z35 IRf 444
Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7^4142 IRF9Z34/Z35 IRF9Z30/Z32 □ □ 1 2 2 Iìc T77 M S U G K P-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <on > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

MTZJ T-72 16B

Abstract: MTZJ18B T-77 T-72 diode MTZJ 15 T-72 MTZJ 7.5 B T-72 diode T-77 diode T-72 5.1B mtzj diode T77 MTZJ T-72 12B
Contextual Info: MTZJ30B Diodes Zener diode MTZJ30B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

1SS133 T77

Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Contextual Info: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction

MTZJ18B

Abstract: MTZJ18B T-77 diode T-77 MTZJ-9.1B T-77
Contextual Info: MTZJ18B Diodes Zener diode MTZJ18B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

MTZJ-9.1B

Abstract: 9.1b diode MTZJ9.1B DIODE 24B T-77
Contextual Info: MTZJ9.1B Diodes Zener diode MTZJ9.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1

diode T-77

Abstract: T-72 diode 5.6B ZENER MTZJ T-72 16B 5.6B DIODE 24B ZENER DIODE 9.1B 7.5B 35 DIODE MTZJ-8.2B 36b 75
Contextual Info: MTZJ36B Diodes Zener diode MTZJ36B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

diode T-77

Abstract: diode T77 MTZJ T-72 16B T-72 diode MTZJ 7.5 B T-72 MTZJ18B T-77 diode T-72 zener 27b 5.1B mtzj t77 diode
Contextual Info: MTZJ13B Diodes Zener diode MTZJ13B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

MTZJ20B

Abstract: T-77
Contextual Info: MTZJ20B Diodes Zener diode MTZJ20B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

22b zener diode

Abstract: MTZJ22B T-77
Contextual Info: MTZJ22B Diodes Zener diode MTZJ22B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

6.2B diode

Abstract: MTZJ5.68 T-77 MTZJ6.2B
Contextual Info: MTZJ6.2B Diodes Zener diode MTZJ6.2B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1

zener mtzj do34

Abstract: MTZJ MTZJ39B T-77
Contextual Info: MTZJ39B Diodes Zener diode MTZJ39B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

MTZJ24B

Abstract: diode zener mtz T-77 diode T-77
Contextual Info: MTZJ24B Diodes Zener diode MTZJ24B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. φ0.4±0.1 3.6B T-72 29±1 2.7±0.3 T-72 29±1 φ1.8±0.2

TR8025

Abstract: RB751V-40 TE-17 1SR35-400A T-82 1SR159-200TE25 1SS376 te-17 ROHM udz te-17 RB063L-30TE25 1SS133 T-77 RB751S-40TE61 RB441Q-40
Contextual Info: Table of characteristics Diodes Table of characteristics Small signal diodes !Switching diodes ROHM has an overwhelming production capability of high reliable switching diodes in the industry. The superior antisurge characteristics of the UMD2 package in spite of the small size is noteworthy. A wide variety of diode arrays

rohm package code

Abstract: T106 T108 T110 T116 T146 T148 TE-17 diode T-77 TE61
Contextual Info: Part No. Explanation Taping Code Surface Mount Type When ordering, specify the part number. Check each code against the tables shown below. Fill in from the left, leaving any extra boxes empty on the right. Small signal / rectifier diode Example: 1 S S 3 5 5

V7560

Abstract: Infrared Emitting Diode TO46 package UJ 78A
Contextual Info: CLED1F Gallium Arsenide Infrared Em itting Diode G E N E R A L D E SC R IP T IO N — T he C lairex CLED 1F is a G allium A rsenide in frared e m ittin g diode in a fla t window herm etic TO-46 package. I t em its a n in ten se band of ra d ia ­ tion w hen forw ard biased. T he C lairex LED is ideally

diode t87

Contextual Info: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode • Dimensions U n it: mm 1) ra H U T' <fc -5 o 2) 3) /MS! (D O -3 5 )? * 3 0 t:-4AV(. 4) # 7 : * t W : ? * 3 0 • Features High dielectric strength. High reliability.

Contextual Info: SKNa 102 Stud Diode Avalanche Diode SKNa 102 8NO2P:1 ?M2B@ R D77 $ N:&=1:5: %&'5+ J3/ 3(,1(5350 3.+/&,13(P E:&= 2:1( 8 YZ77 ¥777 ¥D77 ¥677 ¥Z77 ¥T77 ?M$8 R CD6 $ N01(S CT7U >) R T7 VEP @GH& C7D[YZ @GH& C7D[¥7 @GH& C7D[¥D @GH& C7D[¥6 @GH& C7D[¥Z

Contextual Info: K /D io d e s 1SS244 V 1J =1> I tf $ * y 7 ; U7°U - d"JKfi I E * < 7 ^ ^- ?'-f - K Silicon Epitaxial Planar High-Voltage Switching Mini-Diode • ^W ^TtSEI/'Dim ensions Unit : mm • # * 1) ra I f t / i "T5 & o 2) 3) S/Jv (DO-34) T * So - tt- ^ I - A 'A

Contextual Info: £ *f ^ — K /D io d es 1SS145/1SS146/1SS147 1SS145/1SS146/1SS147 v U =I W E * < "j < t |- — K Silicon Diffused Junction High-Voltage Switching Mini-Diodes • W K v fS Iil/D im e n s io n s Unit : mm 1) raREE (Vr= 150~250V) T 'i i -So 2) 3) @ 'J'$! (DO-34) T ' * 5 o

diode schottky 400A 300V

Abstract: 200-amp stud diode oltronics a MC2C200 common anode schottky 200A Oltronics
Contextual Info: " 6 7 7 8 5 9 4 OLTRONICS INC 45 1 DEJ , hTTflSTM □ □ □ □ □ E 7 OLTRONICS, INC. 7 3 T re m o n tS t • Boston, M A 02108 • Q. 7 ^ 0 3 - 2 3 D ata Sheet No. 88307 S B Power Schottky Diodes Sem iconductor O.E.M. T el. 617 354-6534 200 AM P, 200 Volt Power Schottky Rectifier

1SS133

Contextual Info: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o