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T5551
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Atmel
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Micromodule |
Original |
PDF
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421.21KB |
6 |
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T555101-PAE
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Atmel
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Micromodule |
Original |
PDF
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83.34KB |
4 |
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T-55513D121J-LW-A-AAN
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KYOCERA
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Display Modules - LCD, OLED, Graphic, Optoelectronics, LCD TFT 12.1" XGA 1024X768 WHT |
Original |
PDF
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19 |
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T-55519D150J-LW-A-AAN
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KYOCERA
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Display Modules - LCD, OLED, Graphic, Optoelectronics, LCD TFT 15.0" XGA 1024X768 |
Original |
PDF
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25 |
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T-55519D150J-LW-A-ABN
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KYOCERA
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Display Modules - LCD, OLED, Graphic, Optoelectronics, LCD TFT 15.0" XGA 1024X768 |
Original |
PDF
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26 |
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T5551M00-PAE
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Atmel
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Transponder: Read/Write Transponder Micromodule (256-Bit) 435pF Cap |
Original |
PDF
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1.04MB |
14 |
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T5551M01-PAE
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Atmel
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Transponder: read/write Transponder Micromodule (256-Bit ) 330pF Cap |
Original |
PDF
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1.04MB |
14 |
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T5551M-DDW
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Atmel
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IDIC: Read Write Encryption IDIC with anticollison |
Original |
PDF
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1.04MB |
14 |
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T5551M-TAS
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Atmel
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IDIC: Read Write Encryption IDIC with anticollison |
Original |
PDF
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1.04MB |
14 |
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T5551-PAE
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Atmel
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Micromodule |
Original |
PDF
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83.34KB |
4 |
MMBT5551
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Microdiode Semiconductor
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SOT-23 Plastic-Encapsulate Transistors, NPN, BASE, EMITTER, COLLECTOR. |
Original |
PDF
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MMBT5551
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AK Semiconductor
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NPN transistor in SOT-23 package with 160V collector-emitter breakdown voltage, 0.6A continuous collector current, 300mW power dissipation, and DC current gain (hFE) ranging from 100 to 300 at 1.0mA collector current. |
Original |
PDF
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MMDT5551(RANGE:100-300)
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JCET Group
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Dual NPN transistor in SOT-26 package, with 160 V collector-emitter voltage, 0.2 A continuous collector current, 100 MHz transition frequency, and 0.2 W power dissipation, suitable for medium power amplification and switching applications. |
Original |
PDF
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MMDT5551
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CREATEK Microelectronics
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Dual NPN high voltage transistor in SOT-363 package, with 180 V collector-base voltage, 160 V collector-emitter voltage, 200 mA collector current, and 100 MHz transition frequency, suitable for medium power amplification and switching applications. |
Original |
PDF
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AD-CZT5551
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JCET Group
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NPN transistor in SOT-223 package with 160V collector-emitter voltage, 600mA continuous collector current, 1W power dissipation, and 100MHz transition frequency, suitable for high-voltage amplifier applications. |
Original |
PDF
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MMBT5551
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CREATEK Microelectronics
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High voltage NPN transistor in SOT-23 package, with 160 V collector-emitter breakdown voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
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MMBT5551W
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Shikues Semiconductor
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Small Surface Mount Package, Ideal for Medium Power Amplification and Switching, MARKING:K4N |
Original |
PDF
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MMBT5551
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package, with 160 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300, suitable for medium power amplification and switching applications. |
Original |
PDF
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CXT5551(RANGE:120-180)
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JCET Group
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NPN transistor in SOT-89-3L package with 160V collector-emitter voltage, 0.6A continuous collector current, 100MHz transition frequency, and DC current gain up to 300, designed for high-voltage switching and amplification applications. |
Original |
PDF
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AD-MMBT5551-H
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JCET Group
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NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage and 600mA continuous collector current, with AEC-Q101 qualification, suitable for medium power amplification and switching applications. |
Original |
PDF
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MMBT5551
