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T5401) Datasheets (23)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
T5401	SGS-Ates	Shortform Data Book 1977/78	Short Form	PDF	32.66KB	1
MMBT5401(RANGE:100-200)	JCET Group	MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications.	Original	PDF
MMST5401(RANGE:100-300)	JCET Group	PNP transistor in SOT-323 package with -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and transition frequency of 100 MHz.	Original	PDF
CXT5401	Shenzhen Heketai Electronics Co Ltd	PNP bipolar transistor in SOT-89 package with -160 V collector-base voltage, -150 V collector-emitter voltage, -500 mA collector current, 500 mW power dissipation, and DC current gain up to 300.	Original	PDF
MMBT5401	Shandong Jingdao Microelectronics Co Ltd	MMBT5401 PNP transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -5 V emitter-base voltage, continuous collector current of -0.6 A, and transition frequency of 300 MHz.	Original	PDF
MMBT5401	AK Semiconductor	PNP transistor in SOT-23 package with collector-base breakdown voltage of -160 V, DC current gain (hFE) ranging from 100 to 300, and maximum collector current of -0.6 A.	Original	PDF
MMBT5401	Shikues Semiconductor		Original	PDF
CXT5401(RANGE:80-300)	JCET Group	PNP transistor in SOT-89-3L package with maximum collector current of -0.5 A, collector-emitter voltage of -150 V, collector power dissipation of 0.5 W, and transition frequency up to 300 MHz.	Original	PDF
MMDT5401(RANGE:100-300)	JCET Group	Dual PNP transistor in SOT-363 package with 150 V collector-emitter voltage, 200 mA continuous collector current, 100 MHz transition frequency, and DC current gain up to 300.	Original	PDF
MMBT5401	SLKOR	High Voltage Transistor, VCEO -150Vdc, VCBO -160Vdc, VEBO -6.0Vdc, Ic -500mAdc, PD 225mW, RΘJA 556°C/W, TJ 150°C.	Original	PDF
CXT5401	AK Semiconductor	PNP silicon transistor in SOT-89 package with -150 V collector-emitter voltage, -500 mA collector current, 1.2 W power dissipation, and 100 MHz transition frequency.	Original	PDF
AD-MMBT5401-H	JCET Group	PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching.	Original	PDF
MMST5401	Shenzhen Heketai Electronics Co Ltd	PNP bipolar transistor in SOT-323 surface mount package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and DC current gain from 50 to 300.	Original	PDF
MMBT5401	Microdiode Semiconductor (MDD)	Small Signal Bipolar Transistor	Original	PDF

MMBT5401	Shenzhen Heketai Electronics Co Ltd	PNP bipolar transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300.	Original	PDF
AD-MMBT5401	JCET Group	PNP transistor in SOT-23 package, rated for -160V collector-base voltage, -150V collector-emitter voltage, with a continuous collector current of -0.6A and power dissipation of 0.3W, suitable for medium power amplification and switching applications.	Original	PDF
CZT5401	JCET Group	PNP transistor in SOT-223 package with collector-base voltage of -160 V, collector current of -600 mA, DC current gain up to 300, transition frequency up to 300 MHz, and power dissipation of 1 W.	Original	PDF
MMBT5401	CREATEK Microelectronics	MMBT5401 is a high voltage NPN transistor in SOT-23 package, featuring 160 V collector-base breakdown voltage, 600 mA collector current, and 300 mW power dissipation, suitable for medium power amplification and switching applications.	Original	PDF
MMBT5401L	JCET Group	PNP transistor in SOT-23 package, complementary to MMBT5551, with -160V collector-base voltage, -150V collector-emitter voltage, -0.6A collector current, and 0.3W power dissipation.	Original	PDF
MMBT5401-G(RANGE:200-300)	JCET Group	MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications.	Original	PDF

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Rochester Electronics LLC MMBT5401-FS TRANS PNP 150V 0.6A SOT-23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MMBT5401-FS	Bulk	24,686		6,045	1 - 10 - 100 - 1000 - 10000 $0.05	Buy Now
ETEK International ET54011Y1B 1.1V 500MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ET54011Y1B	Tape & Reel	10,000		1	1 $0.12 10 $0.11 100 $0.10 1000 $0.07 10000 $0.06	Buy Now
ETEK International ET540105Y1B 1.05V 500MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ET540105Y1B	Tape & Reel	10,000		1	1 $0.12 10 $0.11 100 $0.10 1000 $0.07 10000 $0.06	Buy Now
FLIP ELECTRONICS CAT5401YI-25-T2 IC DIG POT 2.5K 24-TSSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CAT5401YI-25-T2	Tape & Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.84	Buy Now
Central Semiconductor Corp CMUT5401-TR-PBFREE TRANS PNP 150V 0.6A SOT-523
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMUT5401-TR-PBFREE	Cut Tape	1,353		1	1 $0.60 10 $0.37 100 $0.23 1000 $0.16 10000 $0.16	Buy Now

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T5401) Search Results

T5401) Datasheets (23)

T5401) Price and Stock

Rochester Electronics LLC MMBT5401-FS

ETEK International ET54011Y1B

ETEK International ET540105Y1B

FLIP ELECTRONICS CAT5401YI-25-T2

Central Semiconductor Corp CMUT5401-TR-PBFREE