T45 SOT Search Results

BFG425W

Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:

BF908 Application Note

Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Contextual Info: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS

BGA2003

Abstract: MLG1608 sot343r2
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-98-B-0709 Author : R. Damen Date : 1998-October-30 Department : Philips Semiconductors Product Group : Discrete SemiConductors - Nijmegen Netherlands Copy : APPLICATION NOTE

X04211

Abstract: X04421 BGA2031 MLG1608 PCS1900 X0421
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-99-BAuthor : Jeroen Bouwman and Jarek Lucek Date : 1999-October 18 Department : Philips Semiconductors Product Group : Discrete Semiconductors - Nijmegen Netherlands , Mansfield MA, USA

Contextual Info: • bbS3T31 Q 0 2 S W T45 W A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SM D envelope SOT-223 . Designed prim arily fo r high-speed switching and driver applications.

B 0920

Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The

2n2222+spice+model

Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The

BFG425W

Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.

Contextual Info: ANALOG DEVICES Low Voltage SOT-23 Temperature Sensors ADT45/ADÏ50 FEATURES Low Voltage O peration 2.7 V to 12 V Calibrated D irectly in °C 10 m V/°C Scale Factor ±2°C Accuracy Over Tem perature (typ) ±0.5°C Linearity (typ) Stable w ith Large Capacitive Loads

ECG2501

Abstract: ECG2513 ECG2506 ecg2504 ECG2414 ECG2415 ECG2416 ECG2417 ECG2418 ECG2419
Contextual Info: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts bvcbo b v c eo Baseto Emitter Volts b v EBO Max. Collector Current Iq Amps Max. Device Diss. Pn

Contextual Info: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

Contextual Info: BDV91 BDV93 BDV95 _ J ^ILIP S I N T E R N A T I O N A L 5bE ]> • 7 1 1 Q û 2 b 0 0 4 3 4 0 b 23b M P H I N T - 3 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended

BFP91A

Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Contextual Info: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

ECG2349

Abstract: ECG245 ECG260 ECG253 ECG274 ECG249 ECG265
Contextual Info: PHILIPS E C fi INC SME D • Darlington Power Transistors Description NPN PNP Collector To Base Volts BVC b o Emitter To Base Volts BVEB0 Collector To Emitter Volts b v Ceo Max. Collector Current Iq Amps bbSB'ìefl üüü71b3 TbS « E C G Maximum Ratings at Tc =25°C

NDS0605

Contextual Info: National Semiconductor' April 19 95 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel e nhancem ent m o d e p o w e r field effect tra n sisto rs are produced using N ational's pro p rie ta ry, high cell density, DMOS technology.

BUV98

Abstract: BUV98A BUV98AV BUV98V sot227a
Contextual Info: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.

transistor ecg246

Abstract: ECG251 ECG2317 ECG252 ECG246 ecg 126 transistor ECG260 ecg253 ECG245 ECG247
Contextual Info: PH IL IP S E C G INC SME D • Darlington Power Transistors Description NPN PIMP Collector To Base Volts BVc b O Emitter To Base Volts BVEBO Collector To Emitter Volts b v Ceo Max. Collector Current 1C Amps bb SB ^ f l GO OT l b B TbS m Z C G Maximum Ratings at T c =25°C

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

KIC77

Contextual Info: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D/E*T/T2/M/M2 Series KIC77A/B/C/D*T/T2 This IC is a system reset IC built in delay time circuit.

t2F sot 23

Abstract: marking m2 KIC77
Contextual Info: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D*T/T2/M/M2 Series KIC77A~D*T/M This IC is a system reset IC built in delay time circuit.

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

ecg2504

Abstract: ECG2506 ECG2501 ECG2510 Transistor 126m ECG2414 ECG2415 ECG2416 ECG2417 ECG2418
Contextual Info: T ran sisto rs cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Description and Application Collector To Emitter Volts bvceo Baseto Emitter Volts b v EBO Max. Collector Current Iç Amps Max. Device Diss. Pn

DR-B 2003

Abstract: drb 2003 PS73633 package MARKING T46 TPS73615-EP TPS73630-EP TPS73618-EP TPS73632-EP TPS73625-EP
Contextual Info: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor