MMDT4401
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AK Semiconductor
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Dual NPN transistor in SOT-363 package with 60 V collector-base voltage, 40 V collector-emitter voltage, 0.6 A continuous collector current, and 250 MHz transition frequency, suited for low power amplification and switching applications. |
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MMBT4401
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AK Semiconductor
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MMBT4401 SOT-23 is a complementary PNP type transistor designed for medium power amplification and switching, with a collector-base voltage of 60 V, collector current of 600 mA, and transition frequency of 250 MHz. |
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MMBT4401
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Shikues Semiconductor
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MMBT4401
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CREATEK Microelectronics
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NPN small signal transistor in SOT-23 package, rated for 40V collector-emitter voltage, 600mA collector current, with a transition frequency of 250MHz and DC current gain up to 300. |
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MMBT4401(RANGE:100-300)
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JCET Group
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MMBT4401 NPN transistor in SOT-23 package, with 60V collector-base voltage, 40V collector-emitter voltage, 600mA collector current, 300mW power dissipation, and transition frequency of 250MHz. |
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MMST4401
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JCET Group
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NPN transistor in SOT-323 package with 60V collector-base voltage, 40V collector-emitter voltage, 600mA collector current, 200mW power dissipation, and 250MHz transition frequency. |
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MMBT4401
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Shandong Jingdao Microelectronics Co Ltd
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NPN transistor in SOT-23 package with 60V collector-base voltage, 40V collector-emitter voltage, 600mA continuous collector current, and 300mW power dissipation, suitable for switching applications. |
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MMST4401
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-323 surface mount package, with 60V collector-base voltage, 40V collector-emitter voltage, 600mA collector current, and 200mW power dissipation, suitable for general-purpose switching and amplification applications. |
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MMBT4401
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SLKOR
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Silicon Epitaxial Planar Transistor, medium power, switching, VCBO 60V, VCEO 40V, VEBO 6V, IC 600mA, PC 350mW, Tj -55~150°C. |
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MMBT4401
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Microdiode Semiconductor
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Switching transistor, Tamb=25°C. |
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MMDT4401(RANGE:100-300)
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JCET Group
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Dual NPN transistor in SOT-363 package with 60 V collector-base voltage, 40 V collector-emitter voltage, 0.6 A continuous collector current, and 250 MHz transition frequency for low power amplification and switching applications. |
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MMBT4401
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
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PZT4401
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JCET Group
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NPN transistor in SOT-223 package with 40 V collector-emitter voltage, 600 mA collector current, 1 W power dissipation, and DC current gain up to 300. |
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MMDT4401
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Shikues Semiconductor
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Plastic-Encapsulate, DUAL TRANSISTOR (NPN), Epitaxial Planar Die, Low Power Amplification and Switching, MRKING:K2X |
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MMDT4401
