T4 MARKING CODE SOT 23 Search Results

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

marking H5 sot 23-5

Abstract: H2A SOT-23-6 18w sot23 transistor SC82 TR13 LPCC-16 marking h5 sot-23-5 20w sc82 sot-23 diode marking code 20W H1 SOT-89
Contextual Info: BRD8011/D Rev. 0, May-2002 Tape and Reel Packaging Specifications ON Semiconductor ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

MBD110DW

Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 marking code 04 sot-363
Contextual Info: MBD110DWT1, MBD330DWT1, MBD770DWT1 Preferred Device Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and

VH81

Abstract: MC74VHC1G08 MC74VHC1G08DFT1 A114 A115 C101 JESD22
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input AND Gate MC74VHC1G08 The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.

74VHC1GU04

Abstract: U04 marking U04 A114 A115 MC74VHC04 MC74VHC1G04 MC74VHC1GU04 MC74VHCU04
Contextual Info: LESHAN RADIO COMPANY, LTD. Unbuffered Inverter MC74VHC1GU04 The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

VH81

Abstract: MC74VHC1G08 VHC1G08 MC74VHC1G08DTT1 A114 A115 C101 JESD22 MC74VHC1G08DFT1
Contextual Info: 2-Input AND Gate MC74VHC1G08 The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.

U04 marking U04

Abstract: A114 A115 MC74VHC04 MC74VHC1G04 MC74VHC1GU04 MC74VHCU04
Contextual Info: Unbuffered Inverter MC74VHC1GU04 The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

74vhc1g04

Abstract: diode v3d A114 A115 C101 JESD22 MC74VHC1G02 MC74VHC1G04DFT1 VHC1G04
Contextual Info: 2–Input NOR Gate MC74VHC1G02 The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

VH22

Abstract: A114 A115 C101 JESD22 MC74VHC1G02 MC74VHC1G04DFT1
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NOR Gate MC74VHC1G02 The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

VH32

Abstract: MC74VHC1G32DFT4 A114 A115 C101 JESD22 MC74VHC1G32 VHC1G32 74VHC1G32
Contextual Info: 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.

Contextual Info: Inverter MC74VHC1G04 The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output.

A114

Abstract: A115 C101 JESD22 MC74VHC1G32 VH32 74VHC1G32
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input OR Gate MC74VHC1G32 The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.

A114

Abstract: A115 C101 JESD22 MC74VHC1G86 74vhc1g86 VHC1G86
Contextual Info: 2-Input Exclusive OR Gate MC74VHC1G86 The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input Exclusive OR Gate MC74VHC1G86 The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

A114

Abstract: A115 C101 JESD22 MC74VHC1GT02 MC74VHC1GT02DFT1 marking T02 sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs MC74VHC1GT02 The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

74vhc1g01

Abstract: MC74VHC1G00 A114 A115 C101 JESD22 MC74VHC1G01
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with MC74VHC1G01 Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

MC74VHC1G09

Abstract: A114 A115 C101 JESD22 VH91
Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input AND Gate with MC74VHC1G09 Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

A114

Abstract: A115 C101 JESD22 MC74VHC1GT50 marking T50 VLD12 DIODE T50
Contextual Info: LESHAN RADIO COMPANY, LTD. Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs MC74VHC1GT50 The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

JESD22

Abstract: MC74VHC1GT02 MC74VHC1GT02DFT1 A114 A115 C101 marking T02 sot-23
Contextual Info: 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs MC74VHC1GT02 The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

MC74VHC1G09

Abstract: A114 A115 C101 JESD22 VH91
Contextual Info: 2-Input AND Gate with MC74VHC1G09 Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

t4 sot23 diode

Abstract: A114 A115 C101 JESD22 MC74VHC1GT00 SOT-353 MARKING T4 74VHC1GT00 t00df
Contextual Info: 2–Input NAND Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs MC74VHC1GT00 The MC74VHC1GT00 is a single gate 2–input NAND fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

MC74VHC1GT50DFT4

Abstract: A114 A115 C101 JESD22 MC74VHC1GT50 marking 88A DIODE T50 SOT-353 MARKING T4
Contextual Info: Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs MC74VHC1GT50 The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

74vhc1g01

Abstract: MC74VHC1G00 A114 A115 C101 JESD22 MC74VHC1G01
Contextual Info: 2–Input NAND Gate with MC74VHC1G01 Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

A114

Abstract: A115 C101 JESD22 MC74VHC1G03 MC74VHC1G05 VHC1G05
Contextual Info: LESHAN RADIO COMPANY, LTD. Inverter with Open Drain MC74VHC1G05 Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.