T3D 55 Search Results

T3D 55

Abstract: Diode T3D Diode T3D 55 T3D 55 diode T3D 70 diode dse16
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 0402 Package Chip LED 0.35mm Height 16-216/T3D-AQ1R2TY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow

t3d 57

Abstract: T3D 88 t3d diode T3D 89 Diode T3D 57 GC5510 gc5514g paramp T3D 45 diode GC5511A
Contextual Info: LO RA L niCROülAVE-FSI SIE D • 5 5 0 0 1 3 0 G O O G M ? ! T3D ■ GaAs PARAMETRIC AM PLIFIER VARACTORS DESCRIPTION FEATURES The GC5510 series paramp varactors are diffused junction gal­ lium arsenide devices featuring the lowest series resistance and

indium gallium arsenide phosphide

Abstract: 090Q PREAMPLIFIER TRANSIMPEDANCE optic fet C30617 C30986-010 C30986-090QC-01 C30986-350 35XL 30306 3008D2
Contextual Info: E 6 & 6 / C A N A D A / O P T OELEK I t C / € l 3030bl0 000ülb3 ID T3D * C A N A InGaAs Photodiodes C30986 Series DATA SHEET Optics For Detection of 1000 to 1700 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails

Contextual Info: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold

parity check mark space

Abstract: 65SC51 T3D 62 G65SC51 G65SC51-1 G65SC51-2 G65SC51-3 G65SC51-4
Contextual Info: C U D / S E M I C O N D U C T O R DIV SSE D • lfl31b4D Ü G Ü 1 7 D 3 T3D * C A L T- 75-37-OS A G65SC51 CMD Microcircuits CMOS Asynchronous Communications Interface Adapter Features General Description • CMOS process technology for low power consumption

2N5377

Contextual Info: AL LE GR O M I C R O S Y S T E M S INC T3D D • 0 5 0 4 33 6 0 0 0 3 7 2 7 S ■ ALCR PROCESS TNL Process TNL NPN Small-Signal Transistor Process TNL transistors and chips are double­ diffused NPN silicon epitaxial planar devices in­ tended for use in general-purpose amplifiers and

T3D 24

Abstract: T3D 05 T3D 45 Sn10Pb88Ag2 333 1kv T3D 30 T3D+45 T3D+53
Contextual Info: www.amccaps.com High Temperature Radial Leaded Capacitors Key Features • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

T4A 392

Abstract: T3D 01 1F 474
Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

Contextual Info: !SPECIFICATIONS AND TEST METHODS Specification No. Item Temperature Compensating Type X7R : -55 to +125D Y5V : -30 to +185D 1 Operating C0G : Y55 to W125D Temperature Range 2 Rated Voltage See the previous pages. 3 4 Appearance Dimensions No defects or abnormalities.

T3D part marking

Abstract: marking T2B T6B MARKING CODE Sn10Pb88Ag2 T5A 392 T6A marking MARKING CODE T5E T3D 05 T4A 392
Contextual Info: www.johansondielectrics.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

Contextual Info: www.amccaps.com HIGH TEMPERATURE RADIAL LEADED CAPACITORS KEY FEATURES • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

T3D 46 diode

Abstract: Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56
Contextual Info: SIEMENS BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm ^FRMS irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current

T3D 76

Abstract: Rectifier t3d T3D rectifier Collmer Semiconductor 50kV T3D 6 CS451F07 CS451F12 CS452F15 CS452F25
Contextual Info: COL LME R S E M I C O N D U C T O R INC MAE D • 553 6712 □ □ □ 1 7 c15 D 1 H « C O L Fast Recovery High Voltage Silicon Rectifiers w Minimum Size 7KV to 5 0 KV V r r m Diffused Silicon Junction Low Leakage Current 100 Nanosec. Reverse Recovery

T3D+53

Abstract: t3d 05 T3D 53
Contextual Info: SPRAGUE/SEMICOND GR OU P T3 85 14 01 9 SPRAGUE. D • 0513050 OGGBSTfl T ■ S E M I C O N D S / ICS D 93D 03598 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain IcBO Device Type

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

T3D 54 DIODE

Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
Contextual Info: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single

T3D DIODE

Abstract: T3D 36 diode T3D 43 diode T3D 28 DIODE Diode T3D 24 Diode T3D 44 T3D 34 diode Kodak KAI 2000 T3D 21 diode T3D 37 DIODE
Contextual Info: Performance Specification KAI-2093M KAI - 2093M 1920 H x 1080 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 2 February 11, 2002 Eastman Kodak Company – Image Sensor Solutions

t3d diode

Abstract: KAI-2093M KAI-2093 T3D 55 diode marking t3d T3D 01 DIODE T3D 28 T3D 17 diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0307 March 19, 2007 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

T3D 36 diode

Abstract: T3D+36+diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

DIODE T3D 95

Abstract: t3d diode T3D 34 diode kai-2093cm T3D 01 DIODE T3D 28 DIODE 360NM diode marking code t3d kai image sensor diode marking t3d
Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JULY 13, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

T3D DIODE

Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7

Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 11, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

gr42-6

Abstract: T3d 1d T3D 82 GR43-2 Y504 .25T25 gr39 W25D gr42 T3D 98 diode
Contextual Info: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 !SPECIFICATIONS AND TEST METHODS Specification No. 1 Item Temperature Compensating Type Test Method High Dielectric Constant Type X7R : Y55 to W125D Z5U : W10 to W885D Y5V : Y30 to W885D Operating