T3D 37 Search Results

Diode T3D 57

Abstract: t3d 39 T3D 45 diode
Contextual Info: Technical Data Sheet Chip LED with Right Angle Lens 12-21C/T3D-CP1Q2B12Y/2C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T3D 67 diode

Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

Contextual Info: Technical Data Sheet Chip LED with Right Angle Lens 12-21C/T3D-CP1Q2B12Y/2C Features Package in 8mm tape on 7 diameter reel. Compatible with automatic placement equipment. Compatible with infrared and vapor phase reflow solder process. Mono-color type. Pb-free.

501C

Contextual Info: CLARE CP Ciane C P / S OL I ] ) STATE bbE D H E mM 'i D M DDOOPGfl T3D • C P C L Clirreilt SenSOrS Solid State Products Division CORPORATION Solid State Current Sensors DESCRIPTION CP Clare's LDA series solid state current sensors provide an optically isolated

T3D 24

Abstract: T3D 05 T3D 45 Sn10Pb88Ag2 333 1kv T3D 30 T3D+45 T3D+53
Contextual Info: www.amccaps.com High Temperature Radial Leaded Capacitors Key Features • • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill Compact MLC Designs Utilizing Military Grade Ceramics

Contextual Info: TUSONIX TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D 225/571 275/6 99 344/8 74 420/10 67 475/12.07 .575/1481 .655/16 64 720/18 29 L E A D S P A C IN G (S ) 200/508 250/635 .250/6.35 250/635 250/6.35 375/952 375/9.52

T4A 392

Abstract: T5A 392 T3D 89 392 t4a t3d 18 101T3DW105KR4CT
Contextual Info: JOHANSON m www.johansondielectrics.com H ig h T e m p e r a t u r e R a d ia l L e a d e d C a p a c it o r s K ey F eatures -jujhuni 1— mti • • • • For Use at Temperatures Up to 200°C Rated Working Voltages from 25V to 4KV Rugged Premolded Case with Hi-Temp Epoxy Fill

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

T3D DIODE

Abstract: T3D 36 diode T3D 43 diode T3D 28 DIODE Diode T3D 24 Diode T3D 44 T3D 34 diode Kodak KAI 2000 T3D 21 diode T3D 37 DIODE
Contextual Info: Performance Specification KAI-2093M KAI - 2093M 1920 H x 1080 (V) Pixel Megapixel Interline CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 2 February 11, 2002 Eastman Kodak Company – Image Sensor Solutions

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

T3D 36 diode

Abstract: T3D+36+diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

T3D DIODE

Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 11, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

Diode T3D 82

Abstract: T3D DIODE Diode T3D 08 Diode T3D 26 T3D 65 diode T3D 82 diode Diode T3D 27 diode T3D 24 T3D 82 T3D 28 DIODE
Contextual Info: MF7643 4-Channel High-Speed Non-Inverting 15 M H z Input Bandwidth 8-Bit DACs with Outpul EJuffers and Parallel Digi :al Data Port M M icro Power System s FEATURES • DACs Matched to ±0.5% typ • Low Harmonic Distortion: 0.25% ypical with VREF = 1 V p - p 0 1 MHz

Contextual Info: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR BIPOLAR POWER TRANSISTORS NPN, TO-257 SHD4261 SHD4262 CONTIN. COLLECT. CURRENT COLLECT. TO EMITTER VOLTAGE COLLECT. TO BASE VOLTAGE EMITTER TO BASE VOLTAGE VCEO v CBO v EBO Volts Volts Volts Amps 80 80

Contextual Info: For use with pin headers shown on pages F8 to FI 2. Can be fitted and removed by hand. An alternative on-board programming method to DIL switches. Open top for test probe. Choice of plating finish. PITCH J u m p e r S o c k e t O p e n Top 2mm M22 C onnectors

T3D 53

Abstract: t3d 54 T3D 38 fl03
Contextual Info: HN29W3221 Series Preliminary Product Preview 4M word x 8-bit CMOS AND Flash Memory HITACHI The Hitachi HN29W 3221 is a 4M word x 8-bit C M O S Flash Memory, realizing on-board programming. It programs or erases data with only on-board power supply 3.3V V c c supply . It dose

Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 S P R A GU E. ^3 Ô513S5G Û0D3S77 2 D S E M I C O N D S / ICS 93 D 03 577 If^ T-âl-îo BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type fT 500

T3D diode

Abstract: T3D 55 diode T3D 45 diode Diode T3D 55 T3D 01 DIODE T3D 43 diode T3D 65 diode DIODE T3D 95 diode T3D Diode T3D 30
Contextual Info: Ju n e 1996 National Semiconductor ” NDT451N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: SPRAGUE/SEMICOND GROUP T3 D • ÖS13ÖSO 0Ü03SÔS ! 8 5 1 4 0 1 9 SPRAGUE. SEM ICONDS/ IC S 1 ■ 93D 0 35 85 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO

thc2510

Contextual Info: I SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP =13 D • SEMICONDS/ ICS ÖS1BÖSG 93D 000355=1 03559 BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 500 10 750 10 360 0.01 225 2.0 225 2.0 5.0 5.0 5.0 4.5 4.5

Contextual Info: SPRAGUE/SEtllCOND 8514019 SPRAGUE, G R OU P 13 T> • SEMICONDS/ IC S Ö513ÖSD GGGaSbT 93D 0 3 5 6 9 2>^ r - â 3 - i ■ - BIPOLAR TRANSISTOR CHIPS NPN Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TÄ = 25°C DC Current Gain Ic ß O

Contextual Info: S G S -T H O M S O N SD1490 m RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 470 - 860 MHz 28 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

Contextual Info: : SPRAGUE/SEMICOND 8514019 SPRAG U E. GROUP T3 D • S E M IC O N D S / I C S ÔS13ÔSD 93D D003SL1 0 3 5 6 1 3> B IPO LA R TRA N SISTO R C H IP S NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain 'cB O VcE sat