T3B DIODE Search Results

T3B diode

Contextual Info: «S IIG K T3B P-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

651T

Abstract: A7c DIODE
Contextual Info: INTEGRATE] SfiE D DEVICE MÖ557V1 FAST CMOS OCTAL TRANSCEIVER/ REGISTERS 3-STATE) DDlDSflfl T3b IDT54/74FCT646T/AT/CT/DT IDT54/74FCT648T/AT/CT IDT54/74FCT651T/AT/CT IDT54/74FCT652T/AT/CT/DT :^ T - S 2 - 3 0 - 0 8 FEATURES: DESCRIPTION: • Fastest CMOS logic family available

D7003

Abstract: 2N3810 B 342 Dc MD7003
Contextual Info: MOTOROLA SC XS T R S /R F i pc n B , 15E D I t3b?5Sq QOflbSbl M I MAXIMUM RATINGS • Rating Symbol Value U nit Collector-Emitter Voltage VCEO 40 Vdc Collector*Base Voltage Vc b o 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc 'c 50 mAdc Collector Current — Continuous

MPS6534 motorola

Abstract: RNW transistor
Contextual Info: MOTORCLA SC 12 E D I XSTRS/R t3b?2S4 OOfltilOQ 1 | MPS6534 CASE 29-04, STYLE 1 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emltter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 4.0 Vdc ic PD

BC171A

Abstract: BC172C BC174A,B BC174A BC171B BC172A BC171A,B bc172a.b BC546
Contextual Info: MOT OROL A SC 12E D I t3b?ES4 QQÖSÖST 4 | XSTR S/ R F Sym bol BC 174A,B BC 171A,B BC 172A,B Unit Collector-Emitter Voltage VCEO 65 45 25 Vdc Collector-Base Voltage VCBO 80 50 30 Emitter-Base Voltage Veb o 6.0 Vdc Collector Current — Continuous >C 100 mAdc

BFR93L

Contextual Info: 12E D I t3b?aS4 GOaSIBfl T I M A X I M U M R A T IN G S Sym bol Value Unit Collector-Emitter Voltage * . Rating VCEO 12 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage Ve b o 2.0 Vdc ic 25 mAdc Sym bol M ax Unit Po 225 mW 1.8 mwrc R»j a 556 °C/W

MMBA811C6L

Abstract: MMBA811C5L
Contextual Info: M O TO R OL A SC X S T R S /R F 12E D t3b?aSM □ GAS'mL M A X IM U M RATINGS Symbol Value U nit Coliector-Emitter Voltage VCEO 45 Vdc Collector-Base Voltage Vc b o 50 Vdc Emitter-Base Voltage vebo 5.0 Vdc ic 50 mAdc MMBA811C8L Symbol Max U nit CASE 318-03, STYLE 6

MC14543B

Contextual Info: MOTOROLA SC LOGIC IME D | t3b?5S2 GOflSM?1! M | fä m o t o r o l a MC14543B CMOS MSI BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER for LIQUID CRYSTALS (LOW -POW ER C O M P L E M E N T A R Y MOS) BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER for LIQUID CRYSTALS

BDC08

Abstract: BDC06 MPSW92
Contextual Info: MOT ORCL A SC XSTRS/R F ISE D I t3b?aSM OOñS^lb T |T - BDC06 BDC08 CA SE 29-03, STYLE 14 TO-92 TO-226AE M A X IM U M RATINGS U nit Sym bol BDC 06 BDC 08 Collector-Emitter Voltage VCEO 300 250 Vdc Collector-Base Voltage VcBO 300 250 Vdc Em itter-Base Voltage

Contextual Info: • 4305571 00544A5 T3b ■ H a r r i s January 1993 HAS R F A 1 N 5 E N-Channel Enhancement-Mode Power Field-Effect Transistor MegaFET Package Features • 1 0 0 A, 50 V • rD S(on) = 0 .0 0 8 f l D R A IN • E lectro static D ischarge Rated • UiS S O A Rating C urve (Single Pulse)

TB172

Abstract: FERROXCUBE VK200 vk200 VK200 ferrite choke stackpole 57-1845-24b vk200 rf choke Stackpole 57-9074 Stackpole ferrite Toroid 57-9322 57-1845-24b
Contextual Info: RF input 50Ω L1, L2: Ferroxcube VK200 19/4B ferrite choke 56pF T1 9:1 100Ω 1/4W 10nF 5600pF 470pF 5600pF 10nF 1KΩ POT L3, L4: 6 ferrite beads each Ferroxcube 56 590 65/3B Gen Pur Diode T1: Ferrite core Stackpole 57-1845-24B T2: 7 turns of twisted pair AWG #20, Ferrite core Stackpole 57-9322

10D4 DIODE

Abstract: 10d4
Contextual Info: SILICON RECTIFIER DIODE IODI— IODIO i a /i oo ~ i o o o v FEATURES • Miniature Size 0 Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS >vs TYPE Voltage Rating

Motorola transistors M 724

Abstract: SD6150
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Diode Common Anode M SD6150 3 Anode CASE 29-04, STYLE 4 T O -92 TO-226AA Cathode 1 2 Cathode MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 usee)

10D10 diode

Abstract: 10D10 10d2 diode 10D4 T3B diode 10D6 diode 10dl 10D2 10D8 10D4 DIODE
Contextual Info: SILICON RECTIFIER DIODE IODI— IODIO ia /ioo ~ iooov FEATUR ES • Miniature Size 0 Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S >\T¥PE Voltage Rating

Contextual Info: SCHOTTKY BARRIER DIODE ESL03B03 ESL03B03F sa/sov FEA TU RES O T 0-251A A Case : ESL03B03 o TO-252AA Case : ESL03B03F Surface Mounting Device P ackaged in 16mm T ape and Reel o E xtrem ely Low Forw ard V oltage Drop o L o w Pow er Loss, High Efficiency o High Surge Capability

mpsw93

Abstract: mpsw92
Contextual Info: M OTOROLA SC XSTRS/R F 15E 0 | t,3b?254 QDÖbllS 5 | T- 2 ^ - 2 3 M A X IM U M RATINGS Symbol Rating MPSW92 MPSW93 U nit Collector-Emitter Voltage VCEO 300 200 Vdc Collector-Base Voltage Vc b O 300 200 Vdc Emitter-Base Voltage Ve b O 5.0 Vdc Collector Current — Continuous

Contextual Info: SONY 1T410 Variable Capacitance Diode Description The 1T410 is a variable capacitance diode designed for electronic tuning of BS/CS tuners using a super-small-miniature flat package SSVC . Features • Super-small-miniature flat package • Low series resistance:

T3B diode

Abstract: ESL03B03 ESL03B03F
Contextual Info: SCHOTTKY BARRIER DIODE ESL03B03 ESL03B03F 3A/30V *>.7 ,2(>4l 2.1KMAX (.094 - o r n jr FEATURES I Ku/jyji OT0-251AA Case : ESL03B03 ' '.rOSUWÌ UTt.US) MAX 1 _ 1;_ . J-'.KMAX (.11941 195)1 •M A X o TO-252AA Case : ESL03B03F Surface M ounting Device Packaged in 16mm T ape and Reel

T3B diode

Abstract: rectifier s1wb
Contextual Info: •«' . iP iy iy » -*«3Ksr-f*-K Rectifier Diode Bridge-Diode • Avalanche ty p * OUTLINE DIMENSIONS S1WB A DZ 800V 1A ■ ÎÊfëi? RATINGS IÊ it f # ^ 3 Ü Î& A bsolute Maximum R atings m s se^- Item S to ra g e Tem perature »£■»& * O perating J u n c tio n Tem perature

Contextual Info: •1 .5 WATTZENER DIODE CDLL4460 • LEADLESS PACKAGE FOR SURFACE MOUNT thru • METALLURGICAL!./ BONDED -1 CDLL4490 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Tem perature: -65°C to +175°C DC Power Dissipation: 1.5 watts @ +25°C

4735A diode

Contextual Info: International ZM4728 S em ico n d ucto r , /ñ c . thru 1.0 WATT ZENER DIODE ZM4764 LEA D LESS PACKAGE FOR S UR FAC E MOUNT DOUBLE SLUG C O N STR U C TIO N MAXIMUM RATINGS Operating Temperature: -65 °C to +200 °C Storage Temperature: -65 °C to +200 °C

167D

Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
Contextual Info: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100

1N916

Abstract: 1N914 diode 1N914
Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N914; 1N916 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The 1N914; 1N916 are high-speed switching diodes fabricated in planar tecshnology, and encapsulated in hermetically sealed leaded glass SOD27

Contextual Info: MOTOROLA Order this document by MUR5150E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M UR5150E SCANSWITCH™ Power R ectifier For Use As A Damper Diode In High and Very High Resolution Monitors M o to ro la P re ferre d D e vic e SCANSW ITCH