MMBT3906
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JCET Group
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PNP epitaxial planar transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain hFE of 100-300. |
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MMDT3906
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JCET Group
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Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W power dissipation, and DC current gain up to 300. |
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MMBT3906T
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SLKOR
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MMBT3906
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SLKOR
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PNP Switching Transistor, VCEO -40V, VCBO -40V, VEBO -6.0V, Ic -200mA, PD 225mW (FR-5), PD 300mW (Alumina), RΘJA 417°C/W, TJ 150°C. |
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MMBT3906
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AK Semiconductor
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MMBT3906 is a PNP transistor in SOT-23 package with -40V collector-emitter voltage, -0.2A continuous collector current, 100-300 DC current gain, and 0.2W power dissipation, suitable for general-purpose switching and amplification applications. |
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MMBT3906T(RANGE:100-300)
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JCET Group
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PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300. |
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MMST3906
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-323 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain up to 300. |
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MMST3906
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JCET Group
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PNP transistor in SOT-323 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain up to 300. |
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PXT3906
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Shenzhen Heketai Electronics Co Ltd
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PNP bipolar transistor in SOT-89 surface mount package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 500mW power dissipation, and DC current gain up to 300. |
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MMDT3906
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CREATEK Microelectronics
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PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMDT3906
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SLKOR
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AD-MMBT3906
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JCET Group
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PNP transistor in SOT-23 package, part of the AD-MMBT3906 series, with a maximum collector current of -200 mA, collector-emitter voltage of -40 V, and power dissipation of 200 mW, AEC-Q101 qualified. |
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MMBT3906W
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AK Semiconductor
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PNP transistor in SOT-323 package with -40V collector-emitter voltage, -0.2A continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMBT3906
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Microdiode Semiconductor
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SOT-23 Plastic-Encapsulate Transistors, PNP, BASE, EMITTER, COLLECTOR |
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MMBT3906
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Jiangsu JieJie Microelectronics Co Ltd
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MMBT3906 is a small signal PNP transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain up to 300. |
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PXT3906
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JCET Group
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PNP transistor in SOT-89-3L package with -40V collector-base and collector-emitter breakdown voltage, -0.2A continuous collector current, 0.5W power dissipation, and DC current gain up to 300. |
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MMBT3906 2A(RANGE:100-300)
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JCET Group
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MMBT3906 is a PNP transistor in SOT-23 plastic package, with -40V collector-base and collector-emitter voltage ratings, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain ranging from 100 to 300. |
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MMBT3906
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CREATEK Microelectronics
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PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT3906
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Shandong Jingdao Microelectronics Co Ltd
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MMBT3906 is a PNP transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, and DC current gain ranging from 100 to 300. |
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MMBT3906M
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JCET Group
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PNP transistor in SOT-723 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 100mW power dissipation, and DC current gain ranging from 30 to 300 depending on operating conditions. |
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MMBT3906
