MMDT3906
|
|
JCET Group
|
Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|
MMBT3906
|
|
JCET Group
|
PNP epitaxial planar transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain hFE of 100-300. |
Original |
PDF
|
|
|
MMBT3906T
|
|
SLKOR
|
|
Original |
PDF
|
|
|
MMBT3906T(RANGE:100-300)
|
|
JCET Group
|
PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|
MMBT3906
|
|
SLKOR
|
PNP Switching Transistor, VCEO -40V, VCBO -40V, VEBO -6.0V, Ic -200mA, PD 225mW (FR-5), PD 300mW (Alumina), RΘJA 417°C/W, TJ 150°C. |
Original |
PDF
|
|
|
MMST3906
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-323 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|
MMDT3906
|
|
CREATEK Microelectronics
|
PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
MMBT3906
|
|
AK Semiconductor
|
MMBT3906 is a PNP transistor in SOT-23 package with -40V collector-emitter voltage, -0.2A continuous collector current, 100-300 DC current gain, and 0.2W power dissipation, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
MMST3906
|
|
JCET Group
|
PNP transistor in SOT-323 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|
PXT3906
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-89 surface mount package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 500mW power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|
MMBT3906
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-23 surface mount package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
PZT3906
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-223 package, with -40V collector-base and collector-emitter voltage, -200mA collector current, 1W power dissipation, and DC current gain up to 300, suitable for general purpose amplifier and switch applications. |
Original |
PDF
|
|
|
MMBT3906 2A(RANGE:100-300)
|
|
JCET Group
|
MMBT3906 is a PNP transistor in SOT-23 plastic package, with -40V collector-base and collector-emitter voltage ratings, -0.2A continuous collector current, 0.2W collector dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
MMBT3906
|
|
CREATEK Microelectronics
|
PNP small signal transistor in SOT-23 package with -40V collector-base and collector-emitter voltage, -200mA collector current, 200mW power dissipation, and DC current gain ranging from 100 to 300. |
Original |
PDF
|
|
|
|
|
PZT3906
|
|
JCET Group
|
PNP transistor in SOT-223 package with -40V collector-emitter voltage, -200mA collector current, 1W power dissipation, and 250MHz transition frequency, suitable for general purpose amplifier and switch applications. |
Original |
PDF
|
|
|
MMBT3906
|
|
Shikues Semiconductor
|
|
Original |
PDF
|
|
|
MMBT3906T
|
|
AK Semiconductor
|
PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and hFE ranging from 60 to 300, suitable for general-purpose switching and amplification applications. |
Original |
PDF
|
|
|
MMBT3906T
|
|
Shikues Semiconductor
|
Epitaxial Planar Die, Complementary NPN, Lead Free Version, MARKING:2A |
Original |
PDF
|
|
|
MMBT3906
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
MMBT3906 is a small signal PNP transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|
PXT3906
|
|
JCET Group
|
PNP transistor in SOT-89-3L package with -40V collector-base and collector-emitter breakdown voltage, -0.2A continuous collector current, 0.5W power dissipation, and DC current gain up to 300. |
Original |
PDF
|
|
|