T34 DIODE Search Results

74hct34

Abstract: B694 ij98 MM54HCT34 MM74HCT34
Contextual Info: January 1988 Semiconductor MM54HCT34/MM74HCT34 Non-Inverter General Description Features The M M 54H C T34/74H C T34 are logic fu n ctio ns fabricated by using advanced silicon-gate CM OS te ch n olo gy w hich provides th e inherent b enefits o f C M OS - low quiescent

Contextual Info: N AMER PHILIPS/D ISCR ETE bTE D IAPX bbS3^31 DD2bbb3 T34 BYV95A; B; C J \ _ AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes. They are

0C340

Abstract: 0L3492N-3 0CM243
Contextual Info: PRODUCT LINE QLD2203 -[ b OLD221Q PRODUCT UNE PHOTOSENSORS Silicon Planer Photodiodes | 0D44L Silicon NPN Epitaxial Planer Phototransistors T34 T35L T36 T55L Digital Output Photodetectors 0IP101 PRODUCT LINE PHOTOCOUPLERS j Photocouplers -[ 0C340 QC360 0C701

LT1ED90A

Contextual Info: PREPARED BY: DATE: JJ&,~ -2 ; 97 -y-. 3 _._ 1‘I&j&.:,_ :-:fi-.-: ii -I s-a :,.-a ;:,+;SPEC.No. -_ ti~~~t34-. PALa APPROVED BY: DATE: / / ELECTROMC COMPONENTS GROUP SHARP CORPORATION DMSION: Opto-Electronic Devices Division SPECIFICATION DEVICE SPECIFICATION

BYW30-50

Abstract: BYW30-50U BYW30
Contextual Info: BYW30 SERIES PHILIPS SbE INTERNATIONAL D • 711002b 00415b4 T34 « P H I N ^ 1 -0 3 -1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery

UFN423

Abstract: FN421 FN423 FN420 ufn 423
Contextual Info: TS 1 F 1 T34?TbB DDlGt7H S UNITRODE CORP 9347963 U NI TRÖ DE CORP 92D 10672 D ^ "K POWER MOSFET TRANSISTORS [“ 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 FEATURES • Fast Sw itching • Low Drive Current • Ease of Paralleling « No Second Breakdow n DESCRIPTION

Contextual Info: H IT A C H I/ OPTOELECTRONICS 54E J> m MM^bSGS 0012075 HL8315E T34 H H I T M G aAIAs LD Description The HL8315E is a high-power 0.8 |jm band GaAlAs laser diode with a double heterojunction structure. It is suitable as a light source for optical disk memories and various other types of optical equipment.

T34 rectifier

Abstract: BYV95A "Rectifier Tube" 678 marking AAX
Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> • bbSB'm DDSbbba I T34 M A P X BYV95A; B; C _ AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES Glass passivated re c tifie r diodes in h e rm e tica lly sealed axial-leaded glass envelopes. T h e y are intended f o r television and in d u stria l applications, such as switched-m ode p o w e r supplies, scan

DIODE 1N4001 SMD

Abstract: half bridge driver S12 MARKING DIODE AEB02350 AEP02349 EF12 P-DSO-28-6 yS34 s34 power diode DIODE S34
Contextual Info: SIE M E N S 1-A Q uad-H B D Quad-Half-Bridge Driver TLE 4208 O verview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optim ized for DC motor m anagem ent applications Very low current consum ption

Photo Relays

Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Contextual Info: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L

diode marking t34

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15-. R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 15-020 R Ordering Code Pin Configuration

1SS265

Abstract: diode marking t34
Contextual Info: Diode, band switching, leaded 1SS265 Dimensions Units : mm These ultra small diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 .4 ± 0 .l Features M- -+ • available in USD package •

1SS227

Abstract: DIODE 1SS227
Contextual Info: T? T O S H I B A -CDISCRETE/OPTOl 9097250 — TOSHIBA — — D IS C R E TE/O PTO - : — — 1SS227 J • •/. DËfl^cmasD oomaBT 4 67 C 09339 D - O f * Silicon Epitaxial. Planar Type Diode Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. 4.2MAX.

Contextual Info: 37bflSE2 0Ü1ÔS34 Ibi M P L S B w GEC PLESSEY SEMICONDUCTORS DC2020/23, DC2171H/72H & DC2600 Series MICROSTRIP PIN DIODES DESCRIPTION APPLICATIONS DC2020/DC2600 Series are a range of broadband microstrip PIN diodes. Both switching modules and passive limiters are available. In the passive limiters the chip and

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

marking T28

Abstract: T31 Marking sot regulator marking T34 T33 Marking sot regulator
Contextual Info: ftlAIEf SURFACE MOUNT DUAL ZENER DIODES 1 WATT DUAL ZENER DIODES / SOT-89 Type Number Marking . V l l l i l l c l i =} | HU OPERATING/STORAGE TEMPERATURE RANGE -5 5 °C to +150°C Voltage Range Maximum Zener . Impedance Z Z T a t lz r Typical Temperature Coefficient

FU-01LD-N

Abstract: FU-27LD
Contextual Info: MITSUBISHI DISCRETE SC blE » • bSM'îflS'l GOlHflDB TTñ ■ MITS FU-01LD-N (0.85), FU-27LD (0.85) 0.85 n m LD Module for Multimode Fiber LD Module types FU-01LD-N (0.85) and FU27LD (0.85) contain AlGaAs LDs (Laser diodes) for 0.85/zm band and are used as light source

T34 diode

Abstract: BYW99P-200 BYW99PI-200
Contextual Info: SG S -TU O M SO N BYW99P/PI IILO HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES . ■ ■ ■ ai — ►H NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION T O P 3 I:

74hct34

Abstract: 74hc34 74LS34 74hc32 GD74HC34 74HC GD54HC34 HCT34
Contextual Info: GD54/74HC34, GD54/74HCT34 HEX BUFFERS General Description These devices are identical in pinout to the 5 4 /7 4 L S 3 4 . They contain six independent noninver­ ting buffers. Especially, the HCT 3 4 can be used for interfacing between TTL and NM O S compon­

FU-01LD-N

Abstract: FU-27LD
Contextual Info: MITSUBISHI DISCRETE SC blE D • bEMTflS1! 0G14flü3 TTñ « M I T S FU-01LD-N (0.85), FU-27LD (0.85) 0.85 |i m LD Module for Multimode Fiber LD Module types FU -01LD -N (0.85) and FU27LD (0.85) contain AlGaAs LDs (Laser diodes) for 0.85/im band and are used as light source

DZ89-C91

Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Contextual Info: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £

OLD122

Abstract: OC340 OD121 357 photo od43l T34L OC40 1r1h
Contextual Info: OUTLINE DIMENSIONS Unit : mm 1. Light-Emitting Diode OLD122 O L D 123 05.5*“ N - — •- H 04.6iat * ► Flat glass TO-18 stem 2-00.45 r I 2.54 1. Cathode 2. Anode (case) 108 -•OUTLINE DIMENSIONS# O LD 125 O LD 124 N 0 3 .0 * ° 20 — -►

T34 diode

Abstract: DIODE S34 s34 diode
Contextual Info: SIEM ENS 1 -A Q uad-H B D Quad-Half-Bridge Driver TLE 4208 Overview Features • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption

T34 rectifier

Contextual Info: DDEbT13 151 APX N A PIER PHILIPS/DISCRETE bTE 1N5059 to 5062 ]> CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable o f absorbing reverse transients. They are intended fo r rectifier applications as well as general purpose applications in television and