T30 TRANSISTOR Search Results

focal reflective phototransistor

Abstract: light following circuit diagram SHARP GP2A22 GP2L20L GP2L23L VISIBLE LIGHT PHOTOTRANSISTOR ecg voltage regulator 3v GP2A22
Contextual Info: aiflo?« ooi77?a t30 PHOTOINTERRUPTER ☆ New product PHOTOINTERRUPTERS <Reflective type> 1 ( Type Model No. CL .a >, X Optim um detecting distance (mm) Features Supply voltage Vcc Dissipation current Icc (V) Low level o utp u t voltage VOL V cc V cc

Contextual Info: ISOCOM CONPONENTS .V LTD 7SC D MflflbSlO QGODDfltj T30 ISO 6 N 1 3 5 , 6 N 1 3 6 HIGH SPEED OPTO ISOLATORS ISOCOM, INC. 274 E. HAMILTON AVE. SUITE F CAMPBELL, CA. 95008 A B S O L U T E M A XIM U M R ATINGS 25°C unless otherw ise noted _

Contextual Info: ultrasonic sensor diffuse mode sensor T30UUPB • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram T30UUPB 3055992 Design

T-301-34

Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-150S Preliminary 150 Watts, 1030-1090 MHz, 10 us Pulse, 1% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPB • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram T30UIPB 3055980 Design

Contextual Info: KSR2209 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=4.7KQ) • Complement to KSR 1 209 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPA • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram T30UIPA 3055974 Design

Contextual Info: ultrasonic sensor diffuse mode sensor T30UUPA • compact housing style ■ cable, 2m ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram T30UUPA 3055986 Design

Contextual Info: ultrasonic sensor diffuse mode sensor T30UDPA • compact housing style ■ cable, 2m ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram T30UDPA 3055544

IC103

Abstract: MT38A araa FMMT38A FMMT38B FMMT38C CJKL
Contextual Info: m SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON ISSUE 2- JANUARY TRANSISTORS 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS - ABSOLUTE MAXIMUM FMMT38A - 4J FMMT38B - 5J FM MT38C - 7.J RATINGS. PARAMETER Collector-Base Voltage

Contextual Info: ultrasonic sensor diffuse mode sensor T30UDPB • compact housing style ■ cable, 2m ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram T30UDPB 3055550

27mhz rf ic

Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UIPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for current measuring range adjustable via teach-in Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UUPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram

Contextual Info: ultrasonic sensor diffuse mode sensor T30UUPBQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 15…24 VDC ■ ■ pnp transistor output and analogue output for voltage measuring range adjustable via teach-in Wiring diagram

Contextual Info: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7

Contextual Info: ultrasonic sensor diffuse mode sensor T30UDPAQ • compact housing style ■ connection via M12 x 1 connector ■ Operating voltage 12…24 VDC ■ two pnp transistor outputs ■ two independent switching ranges adjustable via button or control line Wiring diagram

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Amplifier Transistors MPS6714 MPS6715 NPN Silicon MAXIMUM RATINGS Rating Symbol C ollector-Em itter Voltage Value Unit Vdc VCEO 30 40 MPS6714 MPS6715 C ollector-B ase Voltage Vdc VCBO 40 50 MPS6714 MPS6715 vebo

ecg68

Abstract: uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG58 ECG59 ECG60 ECG60MP
Contextual Info: Transistors cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application Collector To Emitter Volts BVce O Base to Emitter Volts b v Ebo Max. Collector Current Iç Amps Freq. In MHz »t

ECG58

Abstract: ecg59 ecg84 uhf microwave fet ECG79 ECG388 ECG60 ECG60MP ECG61 ECG61MP
Contextual Info: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Description and Application bv Collector To Emitter Volts Base to Emitter Volts BVc e o BVEBo Cbo Max. Collector Current 1C A m p s Max. Device Diss. P q

2N2955

Abstract: 2n2955 to3 t30k transistor 2N2955 2n2955 pnp power transistor 2n2955 "PNP Transistor" 2n2955 2N2955-T30-K 2N2955L-T30-K 2n2955 Power Transistor PNP
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from

2sc2166

Abstract: 2SC2166 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES