T2D 80 APPLICATION NOTE Search Results

T2D 03

Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Contextual Info: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V

t2d 82

Abstract: t2d 76 t2d 96
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

t2d7

Abstract: T2D 1D T2D 09 0/diode T2D7
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

T2D 07

Abstract: UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21
Contextual Info: UNITRODE CORP/UNITRODE, IC =J2]> J> lU N f-rl^ K LINEAR INTEGRATED CIRCUITS [jg g |B ^ General Purpose Operational Amplifier ucop o 2D FEATURES 4 • Excellent DC Specification • Low-Offset Voltage Drift— 8 /xV/°C Max • Low Power Consumption— 90 mW Max

10XTV2-CT-T3

Abstract: 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3
Contextual Info: R XTV High-temperature self-regulating heating cables Electrical freeze protection and processtemperature maintenance for both nonhazardous and hazardous locations. The XTV family of self-regulating heating cables provides solutions for industrial freeze protection and process-temperature

t2d 82

Abstract: T2D 79 marking T2D T2D 07
Contextual Info: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS

T2D 95

Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Contextual Info: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

t2d 82

Abstract: t2d marking code
Contextual Info: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS

t2d 82

Contextual Info: Hybrid Aluminum Electrolytic Capacitors NSPRT Series HIGH TEMPERATURE, EXTENDED LOAD LIFE, RADIAL LEADS, POLARIZED FEATURES • LONG ENDURANCE AT HIGH TEMPERATURE up to 3,000HRS @ 125°C • REDUCED SIZES * NEW * High Temperature +125°C CHARACTERISTICS

T2D 53

Abstract: transistor t2d diode T2D MIPS R4000 74FCT244D T2D 83 diode FCT541 ML65244 ML65245 ML65541
Contextual Info: June 1996 Application Note 42 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In

Contextual Info: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.

T2D 07

Abstract: UCOP02
Contextual Info: UNITRODE CORP/UNITRODE IC ]> • 134fl5n 001012b b LINEAR INTEGRATED CIRCUITS ygg^g|B General Purpose Operational Amplifier FEATURES • Excellent DC Specification 4 • Low-Offset Voltage Drift—8 p.V/°C Max • Low Power Consumption—90 mW Max • Internally Compensated

5353482 ic

Abstract: TC8802 TC8802AF t2d 46
Contextual Info: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.

LA5613

Contextual Info: Ordering number : EN5669 Monolithic Linear 1C LA5613 No. 5669 VCR Regulator and Control Amplifier Overview Package Dimensions The LA5613 is an IC that includes an independently on/off switchable 5-V/0.7-A low-saturation regulator, an 11.3-V/0.3-A ripple filter, and a control amplifier on chip.

UC1838

Contextual Info: UNITRODE CORP /UN ITRODE IC ^2» D I 'iaMflSl'J QGQ'l'IBS 3 • UNI LINEAR INTEGRATED CIRCUITS 7 ^ r v / '3 V UC1838 UC2838 UC3838 Magnetic Amplifier Controller F EA TU RES • Independent 1% Reference • Two U n com m itted, Identical O perational A m p lifie rs

Contextual Info: IMISC427 SYSTEM CLOCK CHIP CMOS LSI PLL FREQUENCY SYNTHESIZER September 1993 PRODUCT FEA TURES • Generates All Essential Clock Signals for the Motherboards ■ 4V to 7V Operating Supply Range ■ Supports 8086, 80286, 80386 and 80486 Based Designs ■ Integrates Keyboard Clock, CPU Clocks, 12X Serial

MC34050P

Abstract: MC34051P MC34050D MC34050 MC34051D MC34051 74LS EIA-422 T2D 70
Contextual Info: g MOTOROLA - MC34050 MC34051 D ual EIA-422/423 T r a n s c e iv e r s -The MC34050/51 are dual transceivers which comply with EIA Standards EIA -422 (Balanced line) and EIA -423 (Unbalanced line). Each device contains two drivers and two receivers.

LB1881V

Abstract: sanyo 3 phase motor SSOP24 ENN4456A GHR 1
Contextual Info: Ordering number : ENN4456A Monolithic Digital 1C LB1881V Three-Phase Brushless Motor Driver IC Overview Package Dimensions The LB 188IV is a three-phase brushless motor driver IC designed for use as a camcorder capstan or drum motor driver, or as a digital audio tape player/recorder motor

T2D 85 diode

Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
Contextual Info: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies

Contextual Info: in ttJ o ^ iy i» w 8XC196NP COMMERCIAL CHMOS 16-BIT MICROCONTROLLER • 25 MHz Operation at 4.5-5.5 Volts ■ 1 Mbyte of Linear Address Space ■ Optional 4 Kbytes of ROM ■ 1000 Bytes of Register RAM ■ Register-register Architecture ■ 32 I/O Port Pins

diode t2d 77

Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
Contextual Info: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies

T2D 52 diode

Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL

T2D 81

Abstract: t2d 46 t2d 82 T2D 83 TC8802AF T2D 2 TC8802 SPEECH SYNTHESIS DI-22 JU TOSHIBA
Contextual Info: INTEGRATED CIRCUIT TOSHIBA TECHNICAL 1. 1 ( 2) (3) (4) (5) DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL . The TC8890 is dedicated mask ROM for speech synthesis T-RT FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.

EF6810

Abstract: J 6810 D EF68A10 EF68A10CV EF6810CM j 6810 EF68A10C EF68B10 EF6810CV EF6810CMG
Contextual Info: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX EF 6810 NMOS 1 2 8x 8 BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The EF 6810 is a byte-organized memory designed for use in bus organized systems. It is fabricated w ith N-channel s ili­ con gate technology. For ease of use, the. device operates