T2D DIODE
Abstract: T2D 70 diode T2D 40 DIODE T2D 65 DIODE diode T2D T2d 03 diode T2D 09 diode T2D 75 diode diode t2d 05 T2D DIODE 06
Contextual Info: S IEM EN S BA 389 Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 1 GHz • Not for new design Type Marking Ordering Code Pin Configuration Package1 BA 389 yellow Q62702-A732 DO-35 DHD
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q62702-a732eha070gido-35fl235bos+13f-100fi53sbds00bb5b5t2d diodet2d 70 diodet2d 40 diodet2d 65 diodediode t2dt2d 03 diodet2d 09 diodet2d 75 diodediode t2d 05t2d diode 06
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T2D DIODE
Abstract: RFN-10 RFN10T2D T2D 40 DIODE T2D 6 N diode T2D 75 diode T2D 8 diode T2D 80 T2D 1 DIODE RFN10
Contextual Info: Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10 T2D ①
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rfn10t2drfn10o-220o220fn+9r1120at2d dioderfn-10t2d 40 diodet2d 6 n diodet2d 75 diodet2d 8 diodet2d 80t2d 1 diode
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t2d diode
Abstract: T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE diode t2d 05 T2D DIODE 60 RFN20T2D RFN20 RFN-20
Contextual Info: Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF 8.0±0.2
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rfn20t2do-220rfn20o220fn+9r1120at2d diodet2d 80 diodet2d 40 diodet2d 80_ dioderfn20 diodediode t2d 05t2d diode 60rfn-20
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RFN-10
Abstract: T2D DIODE RFN10 T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode T2D 6 N diode
Contextual Info: RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2 RFN10
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rfn10t2drfn10o-220o220fn+10r1120arfn-10t2d diodet2d 14 dioderfn10 diodet2d 40 diodet2d 6 diodet2d 75 diodet2d 8 diodet2d 6 n diode
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T2D DIODE
Abstract: T2D DIODE 02 T2D 80_ diode T2D DIODE 16 T2D 80 diode
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 ① 1.3 0.8 13.5MIN 1.2 Construction Silicon epitaxial planer 5.0±0.2
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aec-q101rfn10t2dfhrfn10o-220+7o220fnr1120at2d diodet2d diode 02t2d 80_ diodet2d diode 16t2d 80 diode
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T2D 40 DIODE
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)
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aec-q101rfn20t2dfho-220rfn20+3o220fnr1120at2d 40 diode
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T2D diode
Abstract: T2D 80 diode RFN20 RFN20T2D RFN20 DIODE T2D DIODE 60 T2D 09 diode T2D 40 DIODE T2D 80_ diode diode t2d 05
Contextual Info: RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Dimensions Unit : mm Applications General rectification Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220) 2)Low VF
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rfn20t2do-220rfn20o220fn+9r1120at2d diodet2d 80 dioderfn20 diodet2d diode 60t2d 09 diodet2d 40 diodet2d 80_ diodediode t2d 05
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westcode stud base diode SI 2
Abstract: 140ak
Contextual Info: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S
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pcn/pcr04070amperes2q49a5s-2710+3-b5rt175ccwestcode stud base diode si 2140ak
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T2D 62 diode
Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated
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2sk2645-01mro-220f15t2d 62 diodet2d 98 diode+2t2d 70 diodet2d 27 diode
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34B SOT
Abstract: NDT455N
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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ndt455not-22334b sot |
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T2D 24 DIODE
Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is
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ndt455not-223t2d 24 diodet2d 43 diode+6t2d 65 diodet2d 61 diodet2d diode 42t2d diode 32t2d 04 diodediode t2d
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T2D 96 diode
Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Contextual Info: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION
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m54hc365/366m74hc365/366hc365hc366+11m54/74hharacteristicst2d 96 diodet2d 78 diodet2d 44 diodet2d 76 diode valuet2d diode 29t2d diodet2d 36 diodet2d 19 diodet2d 53 diodet2d diode 96
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T2D 95
Abstract: 74FCT244D T2D 70 diode t2d diodes ML65245 SRAM 256KB 6ns signal path designer T2D 83 diode transistor t2d FCT541
Contextual Info: June 1996 Application Note 42005 ML65244, ML65245 and ML65541 Ultra Fast Octal Buffer/Transceiver Family INTRODUCTION In the design of VLSI circuits and digital systems, the term buffer refers to a circuit’s ability to drive load capacitance significantly larger than its own input capacitance. In
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ml65244ml65245ml65541100pf+9t2d 9574fct244dt2d 70 diodet2d diodessram 256kb 6nssignal path designert2d 83 diodetransistor t2dfct541
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1n58171n8211n58181n821a+111n5819marking a4t sot23a1t sot233ft sot23ph c5v1transistor t04 sot23a4t sot23transistor marking codes a4psot23 marking a1ta6t sot23marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829aphilips diode ph 33dph c5v1philips diode ph 33mphilips diode ph 33jph 33dph33dph33g33g ph diodeph 33gphilips diode ph 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1n58171n8211n58181n821a+111n5819philips diode ph 33dphilips diode ph 33jphilips diode ph 33mdiode c18 ph33g ph diodec18 pha6t sot23c33phph 33gt2d diode
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T2D 85 diode
Abstract: FBC 320 T2D 1 DIODE T2D 24 DIODE T2D 04 DIODE IN T2D DIODE T2D 09 diode
Contextual Info: MP7628 -A ^ L Quad Multiplying 8-Bit Digital-to-Analoc Converter Micro Power Systems FEATURES APPLICATIONS • • • • • • • • • Microprocessor Controlled Gain anci Attenuation Circuits • Microprocessor Controlled/Program liable Power Supplies
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mp7628t2d 85 diodefbc 320t2d 1 diode+4t2d 24 diodet2d 04 diodein t2d diodet2d 09 diode
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T2D 70 diode
Abstract: T2D DIODE
Contextual Info: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State
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ltc1320rs422/rs562rs422rs562+4lt1054551fimbflt2d 70 diodet2d diode
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MP7680JN
Contextual Info: MP7680 5 V CM O S 12-Bit Quad Double-Buffered Multiplying Digita!-to-Analog Converter 2B TEX AR FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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mp768012-bitmp7680jn |
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diode t2d 77
Abstract: T2D 21 diode T2D 24 DIODE T2D 40 DIODE FBC 320 a BA 4213 T2D 80 diode T2D 09 diode T2D 27 diode diode t2d 80
Contextual Info: MP7628 g » E X 4 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter R FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies
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mp7628mp7529bp7628diode t2d 77+9t2d 21 diodet2d 24 diodet2d 40 diodefbc 320 aba 4213t2d 80 diodet2d 09 diodet2d 27 diodediode t2d 80
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T2D 24 DIODE
Abstract: T2d 43 diode
Contextual Info: MP7680 5 V C M O S 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter FEATURES BENEFITS • • • • • • • • • • Reduced Board Space; Lower System Cost. • Independent Control of DACs • Excellent DAC-to-DAC Matching and Tracking
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mp768012-bit3455blfl3422bl6+3qdq741qt2d 24 diodet2d 43 diode
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T2D 52 diode
Abstract: T2D 00 DIODE T2D 80 diode am/T2D DIODE
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N» E 722 1 DUAL ISOLATED DC/DC CONVERTER FEATURES APPLICATIONS • DUAL ISOLATED ±5V TO ±16V OUTPUTS • MEDICAL EQUIPMENT • HIGH BREAKDOWN VOLTAGE: 8000V Test • INDUSTRIAL PROCESS CONTROL
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40v/60hzt2d 52 diodet2d 00 diodet2d 80 diode+1am/t2d diode
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octal 548
Abstract: 5x2 connector header NX 38 HEADER 5X2 560pF T2D 87 diode t2d 68 chips t2d diode T2D T2D 26 diode
Contextual Info: LXD381 — Evaluation Board for Octal E1 Applications Developer Manual January 2001 As of January 15, 2001, this document replaces the Level One document LXD381 — Evaluation Board for Octal E1 Applications User Guide. Order Number: 249213-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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lxd381560pftg-49-1505-nxoctal 548+85x2 connector headernx 38header 5x2t2d 87 diodet2d 68chips t2ddiode t2dt2d 26 diode
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HP5082-2835
Abstract: MP7680 MP7680JE MP7680JN MP7680KE MP7680KN
Contextual Info: MP7680 5 V CMOS 12-Bit Quad Double-Buffered Multiplying Digital-to-Analog Converter JE’ E X q R March 1998-3 FEATURES • • • • • • • • • Exar Pioneered Segmented DAC Approach Four Double-Buffered 12-bit DACs on a Single Chip Independent Reference Inputs
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12-bitttl75mp768034b2bia+73425fcilfl00g77hp5082-2835mp7680jemp7680jnmp7680kemp7680kn
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