T2D 40 Search Results

66-219/T2D-AR2S2B5Y/3C

Abstract: t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C
Contextual Info: Technical Data Sheet White Chip LED With Right Angle Lens 66-219/T2D-AR2S2B5Y/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T2D 90

Abstract: T2D 80 "T2D" T2D 30
Contextual Info: 3.3V CMOS Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C

T2D 44

Abstract: T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode
Contextual Info: 3.3V SM Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C

Contextual Info: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology

16-219A

Abstract: t2d 76 transistor t2d
Contextual Info: Technical Data Sheet 0402 Package Chip LED 0.2mm Height 16-219A/T2D-AR2T1QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

btw38

Abstract: BTW38 Series
Contextual Info: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to

t2d 82

Abstract: t2d 76 t2d 96
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

t2d7

Abstract: T2D 1D T2D 09 0/diode T2D7
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

T2D 03

Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Contextual Info: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V

T2D 07

Abstract: UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21
Contextual Info: UNITRODE CORP/UNITRODE, IC =J2]> J> lU N f-rl^ K LINEAR INTEGRATED CIRCUITS [jg g |B ^ General Purpose Operational Amplifier ucop o 2D FEATURES 4 • Excellent DC Specification • Low-Offset Voltage Drift— 8 /xV/°C Max • Low Power Consumption— 90 mW Max

10XTV2-CT-T3

Abstract: 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3
Contextual Info: R XTV High-temperature self-regulating heating cables Electrical freeze protection and processtemperature maintenance for both nonhazardous and hazardous locations. The XTV family of self-regulating heating cables provides solutions for industrial freeze protection and process-temperature

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

Contextual Info: INTEGRATED CIRCUIT TO SH IBA 1. ° 1 (2) (3) (4) (5) TECHNICAL DATA MASK ROM FOR SPEECH SYNTHESIS LSI TC8890N/F GENERAL The TC8890 is dedicated mask ROM for speech synthesis LSI. FEATURES ROM capacity .128Kbits. Easily connectable to TC8802AF, maximum 64 pieces.

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

T2D 62 diode

Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

5353482 ic

Abstract: TC8802 TC8802AF t2d 46
Contextual Info: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.

T2D 85 diode

Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V

westcode stud base diode SI 2

Abstract: 140ak
Contextual Info: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S

scr 8116

Abstract: C10535J d1195
Contextual Info: 5P — 57 • S /— h W J x * T h y ris to rs 2S2M , 2S4M 2 A SCR 2S2M , 2 S 4 M ü 3P ± îJ tî-> '* S 2 A ¿0 P Y - h K SCR-C,iffit i S L t o- i'^ 7 * I E i J j ; i> 'J Ë I Ï Œ ) ii 2 0 0 V, 400 V • e - t. # & to 4.7 MAX. » ), t T O - 2 0 2 A A ^ iO * iô f X

T2D 07

Abstract: UCOP02
Contextual Info: UNITRODE CORP/UNITRODE IC ]> • 134fl5n 001012b b LINEAR INTEGRATED CIRCUITS ygg^g|B General Purpose Operational Amplifier FEATURES • Excellent DC Specification 4 • Low-Offset Voltage Drift—8 p.V/°C Max • Low Power Consumption—90 mW Max • Internally Compensated

LA5613

Contextual Info: Ordering number : EN5669 Monolithic Linear 1C LA5613 No. 5669 VCR Regulator and Control Amplifier Overview Package Dimensions The LA5613 is an IC that includes an independently on/off switchable 5-V/0.7-A low-saturation regulator, an 11.3-V/0.3-A ripple filter, and a control amplifier on chip.

T2D 96 diode

Abstract: T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D DIODE T2D 36 DIODE T2D 19 diode T2D 53 DIODE T2D DIODE 96
Contextual Info: SbE ]> • 7*^237 Q0MD1S5 [j^DÊKOitLllÊÎ^OKOQigS G y M54HC365/366 M74HC365/366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER 3-STATE HC365 NON-INVERTING - HC366 INVERTING PRELIMINARY DATA ■ HIGH SPEED tpD = 13 ns (Typ) at V<x = 5V ■ LOW POWER DISSIPATION

T2D 1D

Contextual Info: NJ U8 1 0 2 10 BIT MONOLITHIC MULTIPLYING • GENERAL DESCRIPTION D/A CONVERTER ■ PACKAGE OUTLINE The NJU8102 is a high-performance monolithic multiply­ ing 10 bit D/A converter incorporated data latch. It can interface with any kinds of IC like as DTL, TTL