T2D 30 Search Results

66-219/T2D-AR2S2B5Y/3C

Abstract: t2d diode diode T2D t2d 76 66-219-T2D T2D 95 chips t2d transistor t2d 66-219 66-219/T2D-CS1T1B5Y/3C
Contextual Info: Technical Data Sheet White Chip LED With Right Angle Lens 66-219/T2D-AR2S2B5Y/3C Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T2D 90

Abstract: T2D 80 "T2D" T2D 30
Contextual Info: 3.3V CMOS Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C

T2D 44

Abstract: T2D 80 T2D 23 "T2D" T2D 40 T2D 90 diode a7 transistor a7 A7 diode
Contextual Info: 3.3V SM Oscillator Low Power OC1T Specifications Product OC1T Option Codes Terminations: SM, Gold flashed pads SM, Ni+Sn plated pads ࡯ ˿ T1D T2D Frequency: 32.7680kHz ࡯ ±30ppm ±20ppm ±10ppm Other ࡯ ˿ ˿ ˿ Frequency stability: 0 ~ -10ppm 0 to +50°C

Contextual Info: P hilips Sem iconductors DD32512 T2D BB A P X Product specification Hybrid integrated circuit VHF/UHF wideband amplifier OM2070B N AMER PHILIPS/DISCRETE DESCRIPTION b'JE PIN CONFIGURATION A three-stage wideband amplifier In hybrid integrated circuit technology

T2D DIODE

Abstract: T2D DIODE 02
Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 RFN16 T2D ① Construction Silicon epitaxial planer 1.2

16-219A

Abstract: t2d 76 transistor t2d
Contextual Info: Technical Data Sheet 0402 Package Chip LED 0.2mm Height 16-219A/T2D-AR2T1QY/3T Features ․Package in 8mm tape on 7〞diameter reel. ․Compatible with automatic placement equipment. ․Compatible with infrared and vapor phase reflow solder process. ․Mono-color type.

T2D 03

Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Contextual Info: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V

t2d 82

Abstract: t2d 76 t2d 96
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

t2d7

Abstract: T2D 1D T2D 09 0/diode T2D7
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

Contextual Info: A F 28003 SF2994-<£o'2<S NOTES: 1. MATING: 2. MATERIALS: .2Sd Interface dimensions per Mil-C-39012/ SMA Series and Solitron/Microwave MD107. B O D Y . Stainless Steel per AMS-5640, Type 303, Cond. A. CONTACT.Beryllium Copper per QQ-C-530, Cond H.

T2D 07

Abstract: UCOP02 t2d 04 T2D 90 T2D 70 T2D 87 continental KN T2D 80 application note unitrode application note U-68 T2D 21
Contextual Info: UNITRODE CORP/UNITRODE, IC =J2]> J> lU N f-rl^ K LINEAR INTEGRATED CIRCUITS [jg g |B ^ General Purpose Operational Amplifier ucop o 2D FEATURES 4 • Excellent DC Specification • Low-Offset Voltage Drift— 8 /xV/°C Max • Low Power Consumption— 90 mW Max

T2D 62 diode

Abstract: T2D 98 DIODE T2D 70 diode T2D 27 diode
Contextual Info: FU JI tì'utìiEirutìUK 2SK2645-01MR N-channel MOS-FET FAP-IIS Series 600V > Features - 1,2£2 50W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Repetitive Avalanche Rated

10XTV2-CT-T3

Abstract: 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3
Contextual Info: R XTV High-temperature self-regulating heating cables Electrical freeze protection and processtemperature maintenance for both nonhazardous and hazardous locations. The XTV family of self-regulating heating cables provides solutions for industrial freeze protection and process-temperature

TP0606N7

Contextual Info: TP0606N6 TP0606N7 Çh Super te x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss / BVdgs RdS ON (max) -60V 3.5£2 Order Number / Package 14-Pin P-Dip 14-Pin C-Dip* TP0606N6 TP0606N7 14 pin side brazed ceramic DIP

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

T2D 40 DIODE

Contextual Info: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1)Cathode common Dual type. (TO-220)

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Contextual Info: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA

5353482 ic

Abstract: TC8802 TC8802AF t2d 46
Contextual Info: • cJQtì724'ì 00246^4 T33 « T 0 S 3 b4E J> TOSHIBA UC/UP 1. TC8890N/F-1 GENERAL T he TC8890 is dedicated m ask ROM for speech synthesis LSI. 2. FEATURES 0053234 □ ROM capacity 128Kbits. □ E asily connectable to T C 8802A F , m axim um 64 pieces.

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TPM1919-40 TECHNICAL DATA FEATURES : • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE PidB = 46.0 dBm at 1.9 GHz ■ HIGH GAIN GidB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C

T2D 85 diode

Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V

westcode stud base diode SI 2

Abstract: 140ak
Contextual Info: TECHN IC AL WESTCODE SEMICONDUCTORS PUBLICATION D P40 IS S U E 1 March, 1ÖBO Stud-Base Silicon Rectifier Diodes Type PCN/PCR040 70amperes average: up to 1600 volts RATING S Maximum values at 175'5C Tj unless stated otherwise R A TIN G SVMBOL C O N D IT IO N S

T2D 70 diode

Abstract: T2D DIODE
Contextual Info: /T L inTECHNOLOGY e A ß _ asa AppleTalk Transceiver FCflTUfteS DCSC RIPTIOn • Single Chip Provides Complete LocalTalk®/AppleTalk® Port ■ Low Power: lcc = 1-2mA Typ ■ Shutdown Pin Reduces Icc to 30|iA Typ ■ Drivers Maintain High Impedance in Three-State

T2D 07

Abstract: UCOP02
Contextual Info: UNITRODE CORP/UNITRODE IC ]> • 134fl5n 001012b b LINEAR INTEGRATED CIRCUITS ygg^g|B General Purpose Operational Amplifier FEATURES • Excellent DC Specification 4 • Low-Offset Voltage Drift—8 p.V/°C Max • Low Power Consumption—90 mW Max • Internally Compensated