T2222 Search Results
T2222 Datasheets (24)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| T22221510000G | Amphenol Anytek | Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 22POS 35DEG 5.08MM PCB | Original | 105.36KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Shikues Semiconductor | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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JCET Group | NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222AM
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JCET Group | MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMST2222A
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JCET Group | NPN transistor in SOT-323 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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Shandong Jingdao Microelectronics Co Ltd | NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT2222AW
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CREATEK Microelectronics | Dual NPN small signal transistor in SOT-363 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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CREATEK Microelectronics | NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A 1P
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JCET Group | MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A-G
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JCET Group | MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222AT
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Shikues Semiconductor | Silicon Epitaxial Planar Transistor for switching and amplifier applications | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222AW
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CREATEK Microelectronics | Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222ADW
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CREATEK Microelectronics | Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222AT
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JCET Group | MMBT2222AT is an NPN transistor in a SOT-523 plastic package, featuring a collector-emitter voltage of 40V, collector current of 600mA, DC current gain up to 300, and transition frequency of 300MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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AK Semiconductor | MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222A
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SLKOR | Switching Transistor, VCEO 30-40V, VCBO 60-75V, VEBO 5.0-6.0V, Ic 600mA, PD 225-300mW, RΘJA 417°C/W, TJ -55 to +150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT2222A
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JCET Group | Dual NPN transistor in SOT-363 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT2222
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Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PXT2222A
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Shikues Semiconductor | Epitaxial planar die construction, Complementary PNP Type available (PXT2907A). | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T2222 Price and Stock
Select Manufacturer
Diodes Incorporated MMBT2222A-7-FBipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222A-7-F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222A-7-F | Tape & Reel | 3,519,000 | 48 Weeks | 3,000 |
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Buy Now | ||||
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MMBT2222A-7-F | 3,851 | 1 |
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Buy Now | ||||||
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MMBT2222A-7-F | 10,996 |
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Buy Now | |||||||
onsemi MMBT2222ALT3GBipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222ALT3G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222ALT3G | Tape & Reel | 1,460,000 | 52 Weeks | 10,000 |
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Buy Now | ||||
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MMBT2222ALT3G | 40,000 | 53 Weeks | 10,000 |
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Buy Now | |||||
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MMBT2222ALT3G | 220,000 | 53 Weeks | 10,000 |
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Buy Now | |||||
onsemi MMBT2222LT1GBipolar (BJT) Single Transistor, General Purpose, NPN, 30 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222LT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222LT1G | Tape & Reel | 585,000 | 52 Weeks | 3,000 |
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Buy Now | ||||
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MMBT2222LT1G | 24,289 | 1 |
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MMBT2222LT1G | 3,000 | 53 Weeks | 3,000 |
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MMBT2222LT1G | 4,292 |
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MMBT2222LT1G | 45,000 | 53 Weeks | 3,000 |
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Buy Now | |||||
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MMBT2222LT1G | 12,000 |
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Get Quote | |||||||
onsemi MMBT2222ALT1GBipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT2222ALT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT2222ALT1G | Tape & Reel | 171,000 | 52 Weeks | 3,000 |
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Buy Now | ||||
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MMBT2222ALT1G | Tape & Reel | 156,990 | 100 |
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Buy Now | |||||
| MMBT2222ALT1G | Cut Tape | 156,990 | 1 |
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Buy Now | ||||||
| MMBT2222ALT1G | Cut Tape | 27,270 | 1 |
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Buy Now | ||||||
| MMBT2222ALT1G | Tape & Reel | 27,270 | 10 |
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Buy Now | ||||||
| MMBT2222ALT1G | Tape & Reel | 24,000 | 3,000 |
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MMBT2222ALT1G | 3,636 | 1 |
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MMBT2222ALT1G | 60,695 |
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Get Quote | |||||||
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MMBT2222ALT1G | 10,931 |
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MMBT2222ALT1G | 8,641 |
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MMBT2222ALT1G | 375,000 | 52 Weeks | 75,000 |
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Buy Now | |||||
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MMBT2222ALT1G | 1,170,000 | 53 Weeks | 3,000 |
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MMBT2222ALT1G | 36,862 |
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MMBT2222ALT1G | 1,137,000 | 53 Weeks | 3,000 |
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MMBT2222ALT1G | 1,954,500 |
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MMBT2222ALT1G | 2,373,447 | 50 |
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MMBT2222ALT1G | 600,000 |
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MMBT2222ALT1G | 990,000 |
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Buy Now | |||||||
onsemi SMMBT2222ALT3GNPN Bipolar Transistor. ONSSPCTRNSTVU6M5P; - Tape and Reel (Alt: SMMBT2222ALT3G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMMBT2222ALT3G | Tape & Reel | 120,000 | 52 Weeks | 10,000 |
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Buy Now | ||||
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SMMBT2222ALT3G | 10,000 |
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Get Quote | |||||||
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SMMBT2222ALT3G | 53 Weeks | 10,000 |
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Get Quote | ||||||
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SMMBT2222ALT3G | 53 Weeks | 10,000 |
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SMMBT2222ALT3G | 1,505,000 |
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SMMBT2222ALT3G | 25,000 |
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Buy Now | |||||||