Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    T2 MARKING SOT23 Search Results

    T2 MARKING SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAS16
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV99
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet
    TBAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    TBAW56
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Datasheet
    BAV70
    Toshiba Electronic Devices & Storage Corporation Switching Diode, 100 V, 0.215 A, SOT23 Datasheet

    T2 MARKING SOT23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MMBD6050 SURFACE MOUNT SWITCHING DIODES VOLTAGE 80 Volts 225 mWatts POWER MECHANICAL DATA Case: SOT-23 plastic Terminals : Solderable per MIL-STD-750,Method 2026 Approx weight : 0.0084 grams Marking : T2 ABSOLUTE RATINGS SYMBOL VALUE UNITS VR 80 V VRRM 80


    Original
    MMBD6050 OT-23 MIL-STD-750 PDF

    BCX17

    Abstract: BCX18
    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCX17 = T1 BCX18 = T2 Pin configuration 1 = BASE 2 = EMITTER


    Original
    OT-23 BCX17 BCX18 C-120 BCX17 BCX18 PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCX17 = T1 BCX18 = T2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original
    OT-23 BCX17 BCX18 C-120 PDF

    Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX17 BCX18 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCX17 = T1 BCX18 = T2 Pin configuration 1 = BASE 2 = EMITTER


    Original
    OT-23 BCX17 BCX18 C-120 PDF

    Contextual Info: BCX18 PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES *Low Voltage *RoHS Compliant Product 1. 0 3 1 2 2. 4 1. 3 2. 9 *T2 0. 4 1 1. 9 3 0. 95 Collector MARKING 0. 95 Base 2


    Original
    BCX18 OT-23 -100mA -300mA -500mA -500mA, -50mA -500mA 01-Jun-2004 PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Contextual Info: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original
    BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    Contextual Info: TMP125 SBOS323 − DECEMBER 2004 2°C Accurate Digital Temperature Sensor with SPI Interface FEATURES DESCRIPTION D DIGITAL OUTPUT: SPI-Compatible Interface D RESOLUTION: 10-Bit, 0.25°C D ACCURACY: The TMP125 is an SPI-compatible temperature sensor available in the tiny SOT23-6 package. Requiring no


    Original
    TMP125 SBOS323 10-Bit, TMP125 OT23-6 PDF

    sck 101

    Abstract: TMP122 Marking D2 SOT23-6 t125/TMP125 TMP125 T125 TMP125AIDBVR TMP125AIDBVRG4 TMP125AIDBVT
    Contextual Info: TMP125 SBOS323 − DECEMBER 2004 2°C Accurate Digital Temperature Sensor with SPI Interface FEATURES DESCRIPTION D DIGITAL OUTPUT: SPI-Compatible Interface D RESOLUTION: 10-Bit, 0.25°C D ACCURACY: The TMP125 is an SPI-compatible temperature sensor available in the tiny SOT23-6 package. Requiring no


    Original
    TMP125 SBOS323 10-Bit, TMP125 OT23-6 sck 101 TMP122 Marking D2 SOT23-6 t125/TMP125 T125 TMP125AIDBVR TMP125AIDBVRG4 TMP125AIDBVT PDF

    T125

    Abstract: TMP125 TMP125AIDBVR TMP125AIDBVT DIODE T4 T0
    Contextual Info: TMP125 SBOS323 − DECEMBER 2004 2°C Accurate Digital Temperature Sensor with SPI Interface FEATURES DESCRIPTION D DIGITAL OUTPUT: SPI-Compatible Interface D RESOLUTION: 10-Bit, 0.25°C D ACCURACY: The TMP125 is an SPI-compatible temperature sensor available in the tiny SOT23-6 package. Requiring no


    Original
    TMP125 SBOS323 10-Bit, TMP125 OT23-6 T125 TMP125AIDBVR TMP125AIDBVT DIODE T4 T0 PDF

    T125

    Abstract: TMP125 TMP125AIDBVR TMP125AIDBVT
    Contextual Info: TMP125 SBOS323 − DECEMBER 2004 2°C Accurate Digital Temperature Sensor with SPI Interface FEATURES DESCRIPTION D DIGITAL OUTPUT: SPI-Compatible Interface D RESOLUTION: 10-Bit, 0.25°C D ACCURACY: The TMP125 is an SPI-compatible temperature sensor available in the tiny SOT23-6 package. Requiring no


    Original
    TMP125 SBOS323 10-Bit, TMP125 OT23-6 T125 TMP125AIDBVR TMP125AIDBVT PDF

    marking d9 sot23-6

    Contextual Info: TMP125 SBOS323 − DECEMBER 2004 2°C Accurate Digital Temperature Sensor with SPI Interface FEATURES DESCRIPTION D DIGITAL OUTPUT: SPI-Compatible Interface D RESOLUTION: 10-Bit, 0.25°C D ACCURACY: The TMP125 is an SPI-compatible temperature sensor available in the tiny SOT23-6 package. Requiring no


    Original
    TMP125 SBOS323 10-Bit, TMP125 OT23-6 marking d9 sot23-6 PDF

    Contextual Info: TMP125 SBOS323 − DECEMBER 2004 2°C Accurate Digital Temperature Sensor with SPI Interface FEATURES DESCRIPTION D DIGITAL OUTPUT: SPI-Compatible Interface D RESOLUTION: 10-Bit, 0.25°C D ACCURACY: The TMP125 is an SPI-compatible temperature sensor available in the tiny SOT23-6 package. Requiring no


    Original
    TMP125 SBOS323 10-Bit, TMP125 OT23-6 PDF

    T1 SOT23-6

    Abstract: T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode
    Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6


    Original
    ZHCS2000 OT23-6 ZHCS2000TA ZHCS2000TC T1 SOT23-6 T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC marking e1 diode PDF

    Contextual Info: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 29m @VGS = 4.5V • 50m @VGS = 2.5V  100m @VGS = 2.0V  Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0


    Original
    DMN2050L J-STD-020D MIL-STD-202, DS31502 PDF

    ZS20

    Abstract: ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC
    Contextual Info: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6


    Original
    ZHCS2000 OT23-6 ZHCS2000TA ZHCS2000TC ZS20 ZS20 SOT23 MARKING T2 MARKING SOT23-6 ZHCS2000 ZHCS2000TA ZHCS2000TC PDF

    Contextual Info: DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package -20V 110mΩ @ VGS = -4.5V 225mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -2.6A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original
    DMP2225L AEC-Q101 DS31461 PDF

    Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original
    DMN3730U AEC-Q101 PDF

    Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C


    Original
    DMN2300U AEC-Q101 PDF

    KIC77

    Contextual Info: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D/E*T/T2/M/M2 Series KIC77A/B/C/D*T/T2 This IC is a system reset IC built in delay time circuit.


    Original
    KIC77A/B/C/D/E16 50T/T2/M/M2 KIC77A/B/C/D/E* KIC77A/B/C/D* KIC77 240/50/100/200/400ms PDF

    t2F sot 23

    Abstract: marking m2 KIC77
    Contextual Info: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D*T/T2/M/M2 Series KIC77A~D*T/M This IC is a system reset IC built in delay time circuit.


    Original
    KIC77A/B/C/D/E16 50T/T2/M/M2 KIC77A/B/C/D* KIC77A KIC77 240/50/100/200/400ms t2F sot 23 marking m2 PDF

    T2 MARKING SOT23-6

    Abstract: marking ma sot23-6 PNP POWER TRANSISTOR SOT23
    Contextual Info: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in


    Original
    OT23-6 -70mV A/100mA T2 MARKING SOT23-6 marking ma sot23-6 PNP POWER TRANSISTOR SOT23 PDF

    DMN62D1SFB

    Contextual Info: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23  Low On-Resistance 1.4 @ VGS= 10V


    Original
    DMN62D1SFB DS35252 DMN62D1SFB PDF

    DS30005

    Abstract: 6.8 B2 zener zener diode 2.4 b2
    Contextual Info: BZM55C2V4 - BZM55C75 500mW SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features 500mW Power Dissipation High Stability Low Noise Fits onto SOD323/SOT23 Foot Print Hemetic Package D B A Mechanical Data • • • • • C • • • • • Case: MicroMELF


    Original
    BZM55C2V4 BZM55C75 500mW OD323/SOT23 MIL-STD-202, DS30005 BZM55C2V4-BZM55C75 6.8 B2 zener zener diode 2.4 b2 PDF

    ON Semiconductor marking

    Abstract: motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor
    Contextual Info: 504 BRD8008/D Rev. 0, Mar-2000 ON Semiconductor Part Marking Transition Brochure ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original
    BRD8008/D Mar-2000 r14525 ON Semiconductor marking motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor PDF