T2 HIGH FREQUENCY TRANSISTOR Search Results

m lc 945

Abstract: transistor 9206 BFG590W marking code 3T3
Contextual Info: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures

MRF2947RA

Abstract: MRF2947 MRF2947AT1 MRF2947RAT1 microlab SC-70ML
Contextual Info: MOTOROLA Order this document by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF2947AT1,T2 Low Noise Transistors MRF2947RAT1,T2 Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

transisto ot 306

Abstract: 1147 x motorola
Contextual Info: MOTOROLA O rder this docum ent by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise Transistors M R F 2947A T 1 ,T 2 M R F 2947R A T 1 ,T 2 M otorola’s MRF2947 device contains two high performance, low -noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

BDY25

Abstract: BDY23 182T2 181T2 180T2 BDY24
Contextual Info: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

185T2B

Abstract: BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2
Contextual Info: BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

181T2

Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
Contextual Info: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

FERRITE TRANSFORMER 500W

Abstract: RF Amplifier 500w 175 mhz arf450 500w class d amplifier
Contextual Info: ARF450 Common Source Push-Pull Pair ARF450 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 11405 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

toshiba h-bridge driver

Contextual Info: TB6591FL/FLG Toshiba Bi-CMOS Integrated Circuit Silicon Monolithic TB6591FL/FLG 7channel bridge-driver for DC motor TB6591FL is a motor driver IC for DC which uses LDMOS with low ON-resistor for output transistors. 1 constant current control type bridge dirver circuit and 3 constant

Contextual Info: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.

mrf154 amplifier

Abstract: AN749 MRF154 trifilar mc1723 ic 2225C MC1723 application notes 36803 T1/FERRITE TRANSFORMER Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ARCHIVE INFORMATION

UPA826TC-T1

Abstract: BF109 NE685 S21E UPA826TC vaf meter
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency

ARF450

Abstract: FERRITE TRANSFORMER 500W arco 465 150VRY
Contextual Info: Common Source Push-Pull Pair ARF450 ARF450 BeO 11405 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

mrf154 amplifier

Abstract: mc1723 ic nippon ferrite AN749 application of mc1723 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS MRF154 rf mosfet power amplifier 1N4148 1N5362
Contextual Info: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.

Tektronix 7603

Abstract: 109T2 43p transistor Tektronix 108T2 t2109 AL 108 transistor 7603 sonde de temperature
Contextual Info: *10 8 T2 *1 0 9 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA T R A N S IS T O R S N P N S IL IC IU M , M E S A D IF F U S E S ïfc Preferred device Dispositif recommandé • LF and HF large signal amplification Amplification BF ou H F grands signaux V v CEO

Stackpole 57-9322-11

Abstract: EB-27 motorola 2N6368 ecom-2989 Granberg Design of H. F. Wideband Power Transformers AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors EB-32 complementary symmetry amplifier Indiana general ferrite core 2N6367
Contextual Info: Order this document by AN593/D MOTOROLA SEMICONDUCTOR 33333 APPLICATION NOTE AN593 BROADBAND LINEAR POWER AMPLIFIERS USING PUSH-PULL TRANSISTORS Prepared by: Helge Granberg RF Circuits Engineering INTRODUCTION Linear power amplifier operation, as used in SSB

Trimmer ARCO

Contextual Info: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

Contextual Info: Common Source Push-Pull Pair ARF473 D AR F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

IRF530S

Abstract: diode code T2
Contextual Info: PD -95564 IRG4BC20MD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

ARF474

Abstract: mosfet transistor 800 volts.500 amperes Trimmer ARCO
Contextual Info: Common Source Push-Pull Pair ARF474 APT D RF G G RF POWER MOSFET S Flange D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF474 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

capacitance meter

Abstract: "capacitance meter" NE856 S21E UPA821TC UPA821TC-T1 t2 high frequency transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA821TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA821TC contains two NE856 NPN high frequency

Contextual Info: Common Source Push-Pull Pair ARF473 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. D AR F47 G G RF POWER MOSFET S (Flange) 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage

60GHz transistor

Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Contextual Info: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE

IRG4BC20MD

Contextual Info: PD -94115 IRG4BC20MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery