T2 955 E Search Results

Contextual Info: S PC41A1 SP 40KB Sound Controller MAR. 18, 2002 Version 1.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

ndfeb n35

Abstract: N35 magnet N35SH HCJ SMD ndfeb ndfeb* n35sh 100 n35 ndfeb 35 Yx20 t2 955 e
Contextual Info: Test Coils For Reed Switches and Sensors Cylindrical Test Coil No. A B C D E Wire Diameter Turns Coil Res.  Rectangular Test Coil A mm B mm C mm D mm E mm F mm G mm H mm Wire Diameter mm Turns Coil Resistance  717 102 001 53.3 50.8 7.6 5.6 14.1 0.090

Contextual Info: InAs Quantum Well Hall Element HQ-0221 Shipped in packet-tape reel 5,000pcs per reel Notice : It is requested to read and accept "IMPORTANT NOTICE" written on the back of the front cover of this catalogue. ●Absolute Maximum Ratings Limit Unit Max. Input Voltage

FDS3601N

Contextual Info: FDS3601N 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

MC100LVEL56

Abstract: MC100LVEL56DW MC100LVEL56DWG
Contextual Info: MC100LVEL56 3.3V ECL Dual Differential 2:1 Multiplexer Description The MC100LVEL56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. The device features both individual and common select inputs to

MLWS-815

Abstract: MLWS-805 mlwt-955f MLWS-812F Lambda MPU MIL-STD-704D MLW-10 MLWD-815 MLWT-955 mlwf-200
Contextual Info: PART II— DC-TO-DC CONVERTERS LAMBDA'S MIL-ENVIRONMENT MLW SERIES HIGH DENSITY, HIGH RELIABILITY MILITARIZED DC-TO-DC CONVERTERS Lambda has introduced many new models to the MLW Series of isolated DC-to-DC converters and filters for military and civilian aerospace applications:

100LVEL56

Contextual Info: MC100LVEL56 3.3V ECL Dual Differential 2:1 Multiplexer The MC100LVEL56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. The device features both individual and common select inputs to

70RIA40

Abstract: TO-209AE 2N3094 70RIA60
Contextual Info: SbE D IN TER NATIONAL RECTIFIER • 4055455 Q0107G5 1 ■ International Iio r IRectifier Phase Control Thyristors 110 TO 125 AMPS RMS Part number RRM 2N3091 2N3092 2N3093 2N3094 2N3095 2N3096 2N3097 2N3098 2N1909 2N1910 2N1911 2N1912 2N1913 2N1914 2N1915 2N1916

MC100LVEL56

Abstract: MC100LVEL56DW MC100LVEL56DWR2
Contextual Info: MC100LVEL56 3.3V ECL Dual Differential 2:1 Multiplexer The MC100LVEL56 is a dual, fully differential 2:1 multiplexer. The differential data path makes the device ideal for multiplexing low skew clock or other skew sensitive signals. The device features both individual and common select inputs to

Contextual Info: FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description Features These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

i2h4

Abstract: A4N28 824I2 02A31 Z820 2S433 82A8 h826 I214N 01n22
Contextual Info: IBM PowerPC Application Note !"#$%!&' *+!'!&,'-./ -""0'1"2$ +,-./-/0&./112.'"331,-4&,/0% 56+'+,-./212-&./0,-% 72%24.-8'9.,40$12':4.;)'<= 33-%#33>#%?,@A?-/A B2.%,/0C'!?* "#$#%&'()'(* !"#$ %&'$ ()*#+(,$ -./0($ 1-./0(2$ #34#55#5$ 6+)7#88)+$ "98$ 9$ 3)5#$ *":7"$ #;94<#8$ ="#

fqb*7N65C

Abstract: FQB7N65CTM
Contextual Info: QFET FQB7N65C 650V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: 5& 1.27 TYP _ \ ± _ .050 Z *. i- 3 £• X— DIM "A" ^ r 1 DIM "A" SEE NOTE 3 DIM "B" Is A n i i * t! i (T2 Jp « C 1.27 TYP IE i £•yfy Ou DIM ” C ? oZ0 0,9 REF !|i S ^s lifi • I* = 11.S3 « O-J i^ i B It] 05 @3 .100 3 -ia l .125 s si -^)e o.3 8 (. 015)1

FQA7N65C

Contextual Info: QFET FQA7N65C 650V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQA32N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

RETU 3.02

Abstract: OT363 K2280
Contextual Info: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)

FDS8949

Contextual Info: FDS8949 Dual N-Channel Logic Level PowerTrench MOSFET tm 40V, 6A, 29mΩ Features General Description „ Max rDS on = 29mΩ at VGS = 10V These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored

Contextual Info: FEBRUARY 1996 NDF653 DS4203-2.3 NDF653 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 1600V IF AV 660A IFSM 6500A Qr 45µC trr 1.4µs • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

J133 mosfet transistor

Abstract: transistor 955 MOTOROLA
Contextual Info: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make

IRGP30B60

Abstract: C-150 IRGP30B60KD-E
Contextual Info: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

motorola MOSFET 935

Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
Contextual Info: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make

J239

Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
Contextual Info: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET

Contextual Info: SM572067574D6UP May 26, 2000 Revision History • May 26, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • January 6, 2000 Modified module length from 133.37mm to 133.35mm.

Contextual Info: FDS9934C Complementary Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching