T17 TRANSISTOR Search Results

BUX69

Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Contextual Info: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53

TDA8304

Abstract: colour tv circuit diagram 50 hz Oscillator inverter dc ac DB-450.5 diagram tv Philips 14 tv transmitter amplifier circuit mqe 601
Contextual Info: Philips Semiconductors bb53T24 D 0 7 b b t17 7 3 3 ISIC3 Small signal combination 1C for colour TV NAPC/PHILIPS SEMICOND FEATURES • Gain controlled vision IF amplifier • Synchronous demodulator for negative and positive demodulation • AGC detector operating on peak

Contextual Info: 7^5^537 ÜOMSöSb T17 • S 6 TH SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE250N05 V dss RDS on Id 50 V < 0.004 n 250 A . HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH80N05 FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER

npn 200w

Abstract: 2N6688 BUX20A 140W 2N5320 2N5322 2N5323 2N5671 2N5672 BUX10A
Contextual Info: TCSK - TDSbfl?! 0005727 T17 5ûE D THOMSON/ DISTRIBUTOR Bipolar Power Transistors High-Speed Switching Continued V c E (S 3 t)-V h FE T y p e No. v C E O (*u s ) V VcEX(*u«) V 2N 5 3 2 3 2N 5 3 2 2 -7 5 * * -1 0 0 * -5 0 -7 5 90 90 120 125 125 140 120

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

IMIT TC2

Abstract: LTC2054 LTC2439-1 LT6100 LT1787 DC907A-A DC590B LTC6101 LTC6102 TC6102
Contextual Info: DEMO CIRCUIT 9 0 7 LTC6102/6101, LT6100, LT1787, LTC2054, AND Q UICK S TALTC2439-1 RT G UIDE L TC6 10 2 / 6 10 1, L T6 10 0 , L T17 8 7 , L TC2 0 5 4 , a n d L TC2 4 3 9 -1 DESCRIPTION Demonstration circuit 907 includes six different Current Sense circuits featuring the LTC6102/6101, LT6100,

ECG130

Abstract: ECG222 ECG216 ECG196 ECG197 ECG210 ECG198 ECG192A ECG193A ECG194
Contextual Info: Transistors cont'd ECG193A ECG194 ECG195A ECG196 C ollector To Base Volts BV c b O Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) 70 (Compl to ECG192A) MPN-Si, Gen Purp HV Amp, 180 Hi Speed Sw NPN-Si, RF Pwr Amp/Driver 70

ECG210

Abstract: ECG130 ECG222 ECG198 ECG219 ECG192A ECG193A ECG194 ECG195A ECG196
Contextual Info: Transistors cont'd Description and A pplication ECG Type ECG193A ECG194 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) C ollector To Base Volts C ollector To Em itter Volts Base to E m itter Volts BV c b O b v CEO B V e BO M a x. C ollector C urrent

Philips ECG222

Abstract: ECG222 ECG210 ECG130 ECG198 ECG216 ECG213 ECG217 ECG228A npn darlington transistor 150 watts
Contextual Info: PHILIPS E C G INC S4E D Transistors cont'd b v PNP-Si, A F PO ICompI to ECG192A) 70 ECG194 NPN-Si, Gen Purp HV Amp, Hi Speed Sw 180 ECG195A ECG196 C o lle c to r T o E m itte r V o lts Cbo bvceo 70 (CES) B a s e to E m itte r V o lt s b v M ax. C o lle c to r

ECG130

Abstract: ECG213 ECG198 pnp-si darlington power amp NPN transistor Ic 50A td tr ts tf ECG210 ECG222 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG196 ECG197
Contextual Info: Transistors cont'd Max. Collector Current l c Am ps Max. Device Diss. P[j Watts 05 70 70 (CES) 5 5 ECG194 VIPN-Si, Gen Purp HV Amp, Hi Speed S w 180 160 4 6 U Packag e Current Gain hFE Fig. Case No. 120 120 min M 6HS T22* 100 100 typ ro -92 H6 150 30 min

ECG123AP

Abstract: transistor ECG123 ECG159 transistor ECG128 ECG152 ECG128 ECG157 transistor ECG123a ECG123 ECG123A
Contextual Info: Transistors cont'd ECG Type ECG107 ECG108 ECG121 Description and Application (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts bvCBO Collector To Emitter Volts bvCEO Base to Emitter Volts BVEbo 5 Max. Collector Current lc Amps

ECG123AP

Abstract: ECG159 transistor ECG128 ECG128 ecg123A ECG123 ECG152 ECG127 transistor ECG123 transistor ECG123a
Contextual Info: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts b v CBO b v CEO b v Eb o NPN-Si, UHF/VHF Amp, Osc, Vlix, IF Amp

T16 C6

Abstract: 500 watts amplifier schematic diagram
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier

ECG123AP

Abstract: transistor ECG128 transistor ECG123 ECG123 ECG130 ECG153 ECG159 ECG121 ECG154 ecg127
Contextual Info: PHILIPS E C G INC 54E D Transistors cont'd ECG Type Description and Application • bbSBRSfi 00D714T b^S ■ECfi (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Collector To Emitter Volts b vCEO Base to Emitter Volts

ecg123A

Abstract: ECG123AP transistor ECG123a transistor ECG123 ECG159 transistor ECG128 ECG107 ECG123 ECG130 ECG153
Contextual Info: Transistors cont'd ECG Type ECG107 Description and Application (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Collector To Emitter Volts b v CEO NPN-Si, UH F/VH F Am p, Osc, Vlix, IF Am p 35 ECG108 NPN-Si, R F /IF /V ideo Am p,

T28A

Abstract: ECG10 t28a transistor ECG12 ECG13 ECG33 low noise vhf amp transistor lowest noise audio NPN ecg32 ECG15
Contextual Info: Transistors B i - P o l a r T y p e s M axim um Ratings at T c = 25°C Unless Otherwise Noted ECG Type D e sc rip tio n and A p p lic a tio n C o lle c to r T o B a se V o lts C o lle c to r T o E m itter V o lt s BVc b O BVc e O M ax. B a se to I C o lle c to r

T17 motorola

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

100B100JCA500X

Abstract: CDR33BX104AKWS MRF19060 MRF19060S Circuit Diagram Panasonic Model DIM 74 100B5R1JCA500X
Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

T17 TRANSISTOR

Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6
Contextual Info: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches

Contextual Info: KSC1394 NPN EPITAXIAL SILICO N TRANSISTOR TV VHF TUNER MIXER • High Current Gain Bandwidth Product fT=700MHz fiyp • High Power Gain Gpa=20dB Min) at f=200MHz • Low Noise Figure NF=3.5dB (Max) at f=200MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSU E 3 - JANUARY 1996 FEATURES * * High ÎT-900M H Z M in M axcapacitance=1pF * Low noise 4.5dB Wl A fe ', P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

IBM0316809C

Abstract: ibm T22 IBM0316169C cmos dram T20 96 diode
Contextual Info: . IBM0316169C IBM0316409C IBM0316809C 16Mb Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 CL=3 -12 CL=3 Units • Automatic and Controlled Precharge Command fCK Clock Frequency 100 83 MHz • Data Mask for Read/Write control x4,x8

C10H

Abstract: LA7138M GSH1
Contextual Info: Ordering number : ENA0220 LA7138M Monolithic Linear IC For the DVD Player Analog Video Signal I/F Driver Overview The LA7138M is a video output interface IC for DVD players. It is an ideal DVD player driver IC that generates analog video signals such as composite/S and component/RGB signals. Incorporating Y/C-MIX, the LA7138M can dispense with