T1 IRL530N Search Results

T1 IRL530N Result Highlights (5)

Part	Manufacturer	Description	Download
IXF1002EDT-G	Rochester Electronics LLC	IXF1002 - Dual Port Gigabit Ethernet Controller	PDF
AM79C961AVI	Rochester Electronics LLC	Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless	PDF
IXF1002ED	Rochester Electronics LLC	IXF1002ED - Dual Port Gigabit Ethernet Controller	PDF
IXF1002EDT	Rochester Electronics LLC	IXF1002 - Dual Port Gigabit Ethernet Controller	PDF
IXF1002ED-G	Rochester Electronics LLC	IXF1002ED - Dual Port Gigabit Ethernet Controller	PDF

T1 IRL530N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
T1 IRL530N Abstract: IRL530N NIRF1010 Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	91348C IRL530N O-220 NIRF1010 EEK19 O-220AB T1 IRL530N IRL530N NIRF1010	PDF
IRL530N Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	91348C IRL530N O-220 NIRF1010 EEK19 O-220AB IRL530N NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A	PDF
Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	91348C IRL530N O-220 NIRF1010 EEK19 O-220AB	PDF
Contextual Info: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS =100V RDS(on) = 0.10Ω G11	Original	91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418.	PDF
ak 957 1542 d Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL Contextual Info: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11	Original	91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS IRL530NSL	PDF
ak 957 1542 d Abstract: AN-994 IRL530N IRL530NL IRL530NS Contextual Info: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11	Original	91349C IRL530NS/L IRL530NS) IRL530NL) die22 EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS	PDF
IRL530N Contextual Info: PD - 91348B IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier	Original	91348B IRL530N O-220 IRL530N	PDF
AN-994 Abstract: IRL530N IRL530NL IRL530NS Contextual Info: PD - 91349B IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G	Original	91349B IRL530NS/L IRL530NS) IRL530NL) AN-994 IRL530N IRL530NL IRL530NS	PDF
IRL530N Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V	Original	IRLI530NPbF O-220 I840G IRL530N	PDF
Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V	Original	IRLI530NPbF O-220 I840G	PDF
IRL530N Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V	Original	IRLI530NPbF O-220 I840G IRL530N	PDF
AN-994 Abstract: IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 IR hexfet die irlr3410 Contextual Info: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω	Original	5087A IRLR/U3410PbF IRLR3410) IRLU3410) O-252AA) EIA-481 EIA-541. EIA-481. AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 IR hexfet die irlr3410	PDF
9508 Abstract: AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 Contextual Info: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω	Original	5087A IRLR/U3410PbF IRLR3410) IRLU3410) EIA-481 EIA-541. EIA-481. 9508 AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120	PDF
Contextual Info: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω	Original	5087A IRLR/U3410PbF IRLR3410) IRLU3410) EIA-481 EIA-541. EIA-481.	PDF

Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 100V l	Original	1350B IRLI530N O-220 elimina33	PDF
1350B Abstract: IRL530N IRLI530N Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V	Original	1350B IRLI530N O-220 1350B IRL530N IRLI530N	PDF
1350B Abstract: IRL530N IRLI530N Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-184-41 IRLI530N HEXFET TO-220 PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive	Original	IRLI530N O-220 1350B IRLI530N 1350B IRL530N	PDF
1350B Abstract: IRL530N IRLI530N Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 100V	Original	1350B IRLI530N O-220 1350B IRL530N IRLI530N	PDF
AN-994 Abstract: AUIRLR3410 IRL530N Contextual Info: PD - 97491 AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *	Original	AUIRLR3410 AN-994 AUIRLR3410 IRL530N	PDF
IRFU N-Channel Power MOSFETs Abstract: AN-994 IRL530N IRLR3410 IRLU3410 Contextual Info: PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3410 l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.105Ω	Original	91607B IRLR/U3410 IRLR3410) IRLU3410) IRFU N-Channel Power MOSFETs AN-994 IRL530N IRLR3410 IRLU3410	PDF
Contextual Info: PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3410 l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.105Ω	Original	91607B IRLR/U3410 IRLR3410) IRLU3410)	PDF
IRLR3410 Abstract: IRLU3410 AN-994 IRL530N Contextual Info: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-187-06 IRLR3410 HEXFET D-Pak PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance	Original	IRLR3410 91607B IRLR/U3410 IRLR3410) IRLU3410) IRLU3410 AN-994 IRL530N	PDF
Contextual Info: IRLR/U3410 I-P A K T O -25 1 A A D -P A K T O -2 52 A A l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated D Description VDSS = 100V	Original	IRLR/U3410 IRLR3410) IRLU3410) O-252AA	PDF
Contextual Info: AUIRLR3410 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax	Original	AUIRLR3410	PDF

T1 IRL530N Search Results

T1 IRL530N Result Highlights (5)

T1 IRL530N Datasheets Context Search

T1 IRL530N

IRL530N

ak 957 1542 d

ak 957 1542 d

IRL530N

AN-994

IRL530N

IRL530N

AN-994

9508

1350B

1350B

1350B

AN-994

IRFU N-Channel Power MOSFETs

IRLR3410