T1 IRL530N Search Results
T1 IRL530N Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
AM79C961AVI |
![]() |
AM79C961 - Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless |
![]() |
||
AM79C90JC |
![]() |
AM79C90 - CMOS Local Area Network Controller for Ethernet (C-LANCE) |
![]() |
||
SN65LVCP1414RLJR |
![]() |
14.2-GBPS Quad Channel, Dual Mode Linear Equalizer 38-WQFN -40 to 85 |
![]() |
![]() |
|
DP83640TVVX/NOPB |
![]() |
IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-LQFP -40 to 85 |
![]() |
![]() |
|
DP83849IVSX/NOPB |
![]() |
PHYTER DUAL Ind Temp with Flexible Port Switching Dual Port 10/100 Mb/s Eth Phys Layer Transceiver 80-TQFP -40 to 85 |
![]() |
![]() |
T1 IRL530N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
T1 IRL530N
Abstract: IRL530N NIRF1010
|
Original |
91348C IRL530N O-220 NIRF1010 EEK19 O-220AB T1 IRL530N IRL530N NIRF1010 | |
IRL530N
Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A
|
Original |
91348C IRL530N O-220 NIRF1010 EEK19 O-220AB IRL530N NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A | |
Contextual Info: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier |
Original |
91348C IRL530N O-220 NIRF1010 EEK19 O-220AB | |
Contextual Info: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS =100V RDS(on) = 0.10Ω G11 |
Original |
91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. | |
ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
|
Original |
91349C IRL530NS/L IRL530NS) IRL530NL) EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS IRL530NSL | |
ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS
|
Original |
91349C IRL530NS/L IRL530NS) IRL530NL) die22 EIA-418. ak 957 1542 d AN-994 IRL530N IRL530NL IRL530NS | |
IRL530NContextual Info: PD - 91348B IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier |
Original |
91348B IRL530N O-220 IRL530N | |
AN-994
Abstract: IRL530N IRL530NL IRL530NS
|
Original |
91349B IRL530NS/L IRL530NS) IRL530NL) AN-994 IRL530N IRL530NL IRL530NS | |
IRL530NContextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V |
Original |
IRLI530NPbF O-220 I840G IRL530N | |
Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V |
Original |
IRLI530NPbF O-220 I840G | |
IRL530NContextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V |
Original |
IRLI530NPbF O-220 I840G IRL530N | |
AN-994
Abstract: IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 IR hexfet die irlr3410
|
Original |
5087A IRLR/U3410PbF IRLR3410) IRLU3410) O-252AA) EIA-481 EIA-541. EIA-481. AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 IR hexfet die irlr3410 | |
9508
Abstract: AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120
|
Original |
5087A IRLR/U3410PbF IRLR3410) IRLU3410) EIA-481 EIA-541. EIA-481. 9508 AN-994 IRFR120 IRFU120 IRL530N IRLR3410 IRLU3410 U120 | |
Contextual Info: PD - 95087A IRLR/U3410PbF l l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS(on) = 0.105Ω |
Original |
5087A IRLR/U3410PbF IRLR3410) IRLU3410) EIA-481 EIA-541. EIA-481. | |
|
|||
Contextual Info: PD - 9.1350B IRLI530N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D VDSS = 100V l |
Original |
1350B IRLI530N O-220 elimina33 | |
1350B
Abstract: IRL530N IRLI530N
|
Original |
1350B IRLI530N O-220 1350B IRL530N IRLI530N | |
1350B
Abstract: IRL530N IRLI530N
|
Original |
IRLI530N O-220 1350B IRLI530N 1350B IRL530N | |
1350B
Abstract: IRL530N IRLI530N
|
Original |
1350B IRLI530N O-220 1350B IRL530N IRLI530N | |
AN-994
Abstract: AUIRLR3410 IRL530N
|
Original |
AUIRLR3410 AN-994 AUIRLR3410 IRL530N | |
IRFU N-Channel Power MOSFETs
Abstract: AN-994 IRL530N IRLR3410 IRLU3410
|
Original |
91607B IRLR/U3410 IRLR3410) IRLU3410) IRFU N-Channel Power MOSFETs AN-994 IRL530N IRLR3410 IRLU3410 | |
Contextual Info: PD - 91607B IRLR/U3410 HEXFET Power MOSFET Logic Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3410 l Straight Lead (IRLU3410) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V RDS(on) = 0.105Ω |
Original |
91607B IRLR/U3410 IRLR3410) IRLU3410) | |
IRLR3410
Abstract: IRLU3410 AN-994 IRL530N
|
Original |
IRLR3410 91607B IRLR/U3410 IRLR3410) IRLU3410) IRLU3410 AN-994 IRL530N | |
Contextual Info: IRLR/U3410 I-P A K T O -25 1 A A D -P A K T O -2 52 A A l l l l l l l Logic Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3410 Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated D Description VDSS = 100V |
Original |
IRLR/U3410 IRLR3410) IRLU3410) O-252AA | |
Contextual Info: AUIRLR3410 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l Advanced Planar Technology l Low On-Resistance l Logic Level Gate Drive l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax |
Original |
AUIRLR3410 |