T0220AC Search Results

BYT08P-1000

Contextual Info: f Z 7 SCS-THOMSON ^ 7# B Y T 0 8 P -1 0 0 0 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPA­ BILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING Cathode connected to case T0220AC Plastic

Contextual Info: 2Q H RHRP870, RHRP880, RHRP890, RHRP8100 A R R IS S E M I C O N D U C T O R 8A, 700V - 1000V Hyperfast Diodes April 1995 Package Features • Hyperfast with Soft Recovery. <60ns JEDEC T0220AC • Operating Temperature. +175°C

international rectifier NE 22

Contextual Info: Bulletin 12134 rev. B 11/97 International IGR Rectifier Series 20ETS.FP s a f e IR INPUT RECTIFIER DIODE TO-220 FULLPAK Description/Features VF < 1V @ 10A i 1 ’f s m = 300A VRRM800 to 1600V 1 The 20ETS.FP rectifier S A F E lR series has been optimized for very low forward voltage drop, with

Contextual Info: STPR1520D/F ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS I f a v 30 A V rrm 200 V Tj (max) 150°C V f (max) 0.99 V trr (max) 30 ns FEATURES • SUITED FORSMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY

Contextual Info: / ^ T SGS-THOMSON ID M liM lO Ê I STPS1035D/F STPS1045D/F POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

STPSC406B

Abstract: stpsc406d
Contextual Info: STPSC406 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC406D The SiC diode is an ultrahigh performance power

BYT08P-400

Abstract: BYT08PI-400
Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns A A FEATURES AND BENEFITS • ■ ■ ■ K K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

marking code nt

Abstract: marking A3 Taiwan semiconductor "MARKING DIAGRAM" 122J SRA1620 41211
Contextual Info: TAIWAN SRA1620 - SRA16100 SEMICONDUCTOR 16.0 AMPS. Schottky Barrier Rectifiers b RoHS I_Q=22flA C COM PLIANCE nw 4 i2 n » !> Wtl ~ y un* l1W £•?> ■<aa Mi -e - i: ii Features ■i' 4«• ❖ -$■ «• ■i' Low power loss, high efficiency. High correni capability. Low VF.

UF1640

Abstract: UF1630 UF1650
Contextual Info: Ultra Fast Recovery Rectifiers UF1630 —C UF1650 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J. dt .3 90 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155

frp1610

Abstract: FRP1600 FRP1605 FRP1615 FRP1620 3474
Contextual Info: ôM " Ì F | 3 4 b ‘ì t 7 M 0027042 3 |~ " 3469674 FAIRCHILD SEMICONDUCTOR 84D 27842 FRP1600 Series Ultra-fast POWERplanar.TM Rectifiers 16 A, 50-200 V FAIRCHILD A Schlumberger Company Power And Discrete Division Description Designed for use in switching power supplies, inverters

FBR830

Abstract: FBR835 FBR840 FBR845
Contextual Info: 8.0 Amp SCHOTTKY BARRIER RECTIFIERS FBR830 . . . 845 Series Data Sheet Description Mechanical Dimensions 2 Case JEDEC T0-220AC 1 3 Features n HIGH CURRENT CAPABILITY WITH LOW VF n HIGH SURGE VOLTAGE AND TRANSIENT PROTECTION n HIGH EFFICIENCY w/LOW POWER LOSS

Contextual Info: SPEC DEVICE NAME : TYPE NAME 1 F 1CAT 10 N SILICON DIODE E R W O SPEC. No. : DATE : > 2 - 0 6 0 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJL.td. DRAWN -A CHECKED o •XL o 3:

30ct0045

Abstract: SAY115 TO-247AA 247AA 120N0045 Schottky Diode 40V 1A bridge 95s0 TO-247-AA 15OCMO 249m
Contextual Info: Forward voltage drop is a function of the Schottky's reverse voltage rating. The maximum voltage rating of today’s Schottky rectifiers is about 150V. At this voltage, the Schottky’s forward voltage drop is lower than that of a fast recovery epitaxial PN junction rectifier by 150 to

MUR830

Abstract: MOTOROLA MUR115 MUR890 BYW29 MUR1530 MUR430 MUR880 byw80 schottky BYW29-50 MUR490
Contextual Info: EXPANDING the SW ITCHM O DE Rectifier fam ily are these ultrafast devices with reverse recovery tim es of 25 to 100 nanoseconds. They com plem ent the broad Schottky offering for use in the higher voltage outputs and internal circuitry of switching power supplies as operating frequencies increase

Contextual Info: BYW80PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED PACKAGE: Insulating voltage = 2500 V rms

Contextual Info: STPR520D/F ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 200 V Tj (max) 150°C V f (max) 0.99 V trr (max) 30 ns FEATURES • SUITED FORSMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY

MBRI045

Contextual Info: INTERNATIONAL RECTIFIER fc.5E D • MflSSMSS DQ171bD 7S3 PD-2.317 International MBR1035 EMIRectifier mbri 045 SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Description/Features The MBR10. Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

Contextual Info: S^E D • 4Û55452 ÜGlEMflb 15b ■ INR PD-2.319 INTERNATIONAL RECTIFIER bitemational S Rectifier MBR1635 MBR1645 SCHOTTKY RECTIFIER 16 Amp Major Ratings and Characteristics Description/Features Characteristics MBR16. Units ' f AV Rectan8«Jlar 16 A 35/45

Contextual Info: STPR310D/F STPR320D/F / = T SGS-THOMSON ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY ■ HIGH AVALANCHE ENERGY CAPABILITY K K DESCRIPTION Low cost single chip rectifier suited for switchmode

Contextual Info: r z 7 S G S -T H O M S O N L ie r a s * ^ 7 #® K S T T B 1 2 0 6 D I TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 12A V rrm 600V trr (typ) 50ns V f (max) 1.3V K. FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

BYT08PI400

Abstract: BYT08P-400
Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 8A V rrm 400 V (max) 1.4 V trr (max) 35 ns Vf FEATURES AND BENEFITS • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING

Schottky Diode 40V 6A

Abstract: ST Low Forward Voltage Schottky Diode F16K F16KQ30S F16KQ30SB F16KQ40S F16KQ40SB
Contextual Info: SCHOTTKY BARRIER DIODE F16KQ30S F16KQ40S F16KQ30SB F16KQ40SB 16.6A/30~ 40V FEATURES ° Similar to T0-220AC and T0-220AB Case Fully Molded Isolation ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types

1N4007W

Abstract: IC sk103 UPS5818 JN sod323 SB10100CT SK14 mbr20100ct microsemi MMSZ5277B 1N5401 MMBZ5277B
Contextual Info: MCC CASE STYLE REFERENCE G U ID E PR O D U C T G ROUPS ARE SO RTED BY C U R R E N T R A TIN G Please note that this guide does not include the entire MCC product offering. It only includes those part numbers that are offered in a variety o f packages. In some cases,

ERW07-120

Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E RWO T- 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DA TE NAME APPROVED draw n' Fuji Electric Co^Lid. CHECKED r 1/6 Y 0257-R-004a Ratings and characteristics of Fuji silicon diode