T0 CA Search Results

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

CA111

Abstract: IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722 MTP7N18 MTP7N20
Contextual Info: This Type No. IRF621 IRF622 IRF623 By MTP7N18 Its MTP7N20 IRF721 MTP3N35 MTP3N40 IRF820 IRF822 IRF823 MTP2N45 MTP2N50 T0-220 37 TO-220 (37) T 0 22 0 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) T 0 22 0 (37) TO-220 (37) T0-220 (37) 70-220 (37) TO-220

Contextual Info: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,

2sc3807

Abstract: 2SA1692
Contextual Info: SA0YO LARGE-POWER T0-126LP TRANSISTORS F e a t u r e s ☆ No screw hole makes it possible to mount a large-sized chip, Conventional type :10W(Tc =25”C ), T0-126LP:201» (Tc = 25t: ) ☆ Facilitates high-density mounting. ☆ Replaceable for T0-220 20W class

Contextual Info: REV DESCRIPTION DATE APPROVED SEE SHEET #1. TO—5 PART NO. TO—5 TO— 6 T0-9 10-13 .225 .250 .300 .225 I.D. 5.7mm 6.4mm 7.8mm 5.7mm .375 .375 .437 .310 O.D. 9.5mm 9.5mm) 11.1mm 7.9mm) TO-18 PART NO. TO-12 TO— 16 T0-17 T0-18 TO—20 TO—27 .125 .125

DSP56156

Abstract: MC68000 PB12 SC10-11
Contextual Info: Pin Descriptions Address and Data Bus Bus Control Pin Descriptions t0, t1, t2, t3 , R/W goes high in t0. R/W is three-stated during hardware reset. Address and Data Bus A0-A15 (Address Bus) — three-state, active high outputs. A0-A15 change in t0 and specify the address for external program and data memory accesses. If

Contextual Info: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR

Schottky Diode 40V 6A

Abstract: ST Low Forward Voltage Schottky Diode F16K F16KQ30S F16KQ30SB F16KQ40S F16KQ40SB
Contextual Info: SCHOTTKY BARRIER DIODE F16KQ30S F16KQ40S F16KQ30SB F16KQ40SB 16.6A/30~ 40V FEATURES ° Similar to T0-220AC and T0-220AB Case Fully Molded Isolation ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

C4106 transistor

Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
Contextual Info: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower

TC40H157P

Abstract: H158
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC40H157 TC40H158 TC40H157P/F TC40H158P/F QUAD 2-T0-1-LINE DATA SELECTOR/MULTIPLEXER QUAD 2-T0-1-LINE DATA SELECTOR/MULTIPLEXER The TC40H157 and the TC40K158 are Quid data

A1306 TRANSISTOR

Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
Contextual Info: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)

1ALF

Contextual Info: HER161PT TSC S thru HER167PT 16.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 tc 800 V olts CURRENT 16.0 A-poros T0-3P/T0-247AD FEATURES * Dual rectifier construction, positive center-tap * Plastic package has Underwriters Laboratory

diode AE 26A

Abstract: IRH3250 IRH4250 IRH7250 IRH8250
Contextual Info: PD - 90697D RADIATION HARDENED POWER MOSFET THRU-HOLE T0-204AA/AE (T0-204AA/AE IRH7250 200V, N-CHANNEL ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250 IRH3250 IRH4250 IRH8250 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si)

Contextual Info: STP36NE06 STP36NE06FP N - CHANNEL 60V - 0.032Î2 - 36A - T0-220/T0-220FP STripFET POWER MOSFET TYP E V dss RDS on Id STP36NE06 STP36NE06FP 60 V 60 V < 0 .0 4 0 Q. < 0 .0 4 0 Q. 36 A 20 A . TYPICAL Ros(on) =0.032 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

HITACHI 5C

Contextual Info: HRW1002A L Silicon Schottky Barrier Diode for Rectifying HITACHI ADE-208-240B(Z) Rev 2 Oct. 1997 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Same power as T0-220AB. • Small outline compared with T0-220AB. Ordering Information

TC74HC4514P

Abstract: TC74HC4515 i.c. cmos 4514b TC74HC4515P N203
Contextual Info: TC74HC4514P TC74HC4515P TC74HC4514P 4-T0-16 LINE DECODER/LATCH TC74HC4515P 4-T0-16 LINE DECODER/LATCH INV. The TC74HC4514 and TC74HC4515 are high speed CMOS 4-LINE TO 16-LINE DECODER WITH LATCHED INPUTS fabricated with silicon gate C MOS technology. It achieves the high

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

Contextual Info: HEF4731B HEF4731V LSI QUADRUPLE 64-BIT STATIC SHIFT REGISTER The HEF4731B and HEF4731V are quadruple 64-bit static shift registers each with separate serial data inputs D/^ to D q , clock inputs (CP a t0 CP d ) and data outputs (063A t0 C>63d ) from the 64th

2n2619

Contextual Info: SCRS Continued It (AMPS) 8.0 10 12 @ Tc (°C) 90 100 100 90 90 ITSM(AMPS) 90 100 100 100 120 CASE i1 f 6 T0-220 TO-64 T0-220 VRRM (VOLTS) 25 2N1770.A* 2N4167* 50 2N1771 ,A* 2N4168* 100 2N1772.A* 2N4169* 150 2N1773.A* 200 CS220-8B 2N1774.A* 2N4170* 250 2N1775.A*

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

10N15

Abstract: 10N12 rfm10n rfp10n12
Contextual Info: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170