T0 CA Search Results

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

smd diode E7

Abstract: sch550 SCH360 gp20 diode T0-220CT MBR2 SCH530
Contextual Info: GENL I N S T R / POLIER 2 SE D • 30^0137 G0 D3 3 E7 fi SCHOTTKY RECTIFIERS continued B (A) PKG T Y P E 16 20 T0-3P T0-220CT 30 T0-220CT T0-3P "ì i f VRRM [volts) i l l 20 30 MBR2035CT 35 40 SBL3030PT SBL1630PT MBR3035PT SBL3040PT SB L1640PT MBR2045CT

CA111

Abstract: IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722 MTP7N18 MTP7N20
Contextual Info: This Type No. IRF621 IRF622 IRF623 By MTP7N18 Its MTP7N20 IRF721 MTP3N35 MTP3N40 IRF820 IRF822 IRF823 MTP2N45 MTP2N50 T0-220 37 TO-220 (37) T 0 22 0 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) T 0 22 0 (37) TO-220 (37) T0-220 (37) 70-220 (37) TO-220

64TI

Contextual Info: A r -A r 28 6 8.5 8tO .25 7 l.5 8 t0 .2 5 TYP 2.54 CENTRES 27 6 6 .0 4 i0 .2 5 6 9 .0 4 tO .2 5 26 6 3 .5 0 t0 .2 5 6 6 .5 0 t0 .2 5 25 6 0 .9 6 t0 .2 5 6 3.9 6tO .25 24 5 8 .4 2 t0 .2 5 6 l.4 2 tO .2 5 23 5 5.8 8tO .25 58.88tO .25 LOCKING FEATURE OPTIONAL

MPS650

Abstract: TO-92 CASE CENW650 CENW751 MPS651 MPS750 MPS751 T0237 MPS75
Contextual Info: Datasheet Central Semiconductor Corp. MPS650 MPS651 NPN T0-92 EBC MPS750 MPS751 PNP TO-92 EBC CENW650 CENW651 NPN T0-237 EBC CENW750 CENW751 PNP T0-237 EBC 145 Adams Avenue, Hauppauge, NY 11788 USA COMPLEMENTARY SILICON SMALL Tel: 631 435-1110 • Fax: (631) 435-1824

SDA356N

Abstract: SDA180A SDA188A SDA240A SDA240B SDA280A SDA380A SDA381A SDA382A SDA39AUF
Contextual Info: ADC 50A 120A ADC P PAD P CASE T0-3 TO-61 188 240 35ns 35ns 5ust 12 A PAD P PAD PAD PAD PAD PAD PAD P 280 T0-66 T0-59 180 280 380 380 380 Note 1 25ns 30ns 5us* 5us* 4us 150ns 50ns 45 SDA240B SDA180B SDA39BUF SHA395A SDA40BHF SDA280B SDA380B SDA381B SDA382B SEA2603 SHA398A SDA188B

Contextual Info: smro SANYO Discrete Device Package Out 1ines unit:mm Sm all-S ig n al T r a n s i s t o r s Large-Signal T ra n sisto rs Outlines SMCP, MCP. CP, CP4/5/6, PCP, PCP4/5, XP5/6, TP, TP-FA, MFP6, S0P8 name SPA. NP, MP, NMP, FLP, TO-126, T0-126ML, T0-126LP ZP. SMP, SMP-FD, TO-220, T0-220ML, T0-220FI (LS). TO-220MF,

2sc3807

Abstract: 2SA1692
Contextual Info: SA0YO LARGE-POWER T0-126LP TRANSISTORS F e a t u r e s ☆ No screw hole makes it possible to mount a large-sized chip, Conventional type :10W(Tc =25”C ), T0-126LP:201» (Tc = 25t: ) ☆ Facilitates high-density mounting. ☆ Replaceable for T0-220 20W class

Contextual Info: REV DESCRIPTION DATE APPROVED SEE SHEET #1. TO—5 PART NO. TO—5 TO— 6 T0-9 10-13 .225 .250 .300 .225 I.D. 5.7mm 6.4mm 7.8mm 5.7mm .375 .375 .437 .310 O.D. 9.5mm 9.5mm) 11.1mm 7.9mm) TO-18 PART NO. TO-12 TO— 16 T0-17 T0-18 TO—20 TO—27 .125 .125

Contextual Info: F16KQ90S F16KQ100S F16KQ90SB F16KQ100SB 16.6A/90~100V SCHOTTKY BARRIER DIODE 3.11.122 MAX FEATURES 4.8U89) •MAX l-_L0.3 .405)_-. MAX / " 3.01.118} °Similar to T0-220AC and T0-*220AB Case Fully Molded Isolation f 6.9(.272) 6.31.248) 6,9(,272) 6.3Î.248)

DSP56156

Abstract: MC68000 PB12 SC10-11
Contextual Info: Pin Descriptions Address and Data Bus Bus Control Pin Descriptions t0, t1, t2, t3 , R/W goes high in t0. R/W is three-stated during hardware reset. Address and Data Bus A0-A15 (Address Bus) — three-state, active high outputs. A0-A15 change in t0 and specify the address for external program and data memory accesses. If

CQ220

Abstract: CQ220-8B CQ220-8BR CQ220-8D CQ220-8DR CQ220I-6BS CQ220I-6DS CQ220I-6MS CQ220I-8B CQ220I-8BR
Contextual Info: Triacs Continued 8.0 It (AMPS) 6.0 @ Tc(°C) 90 90 90 90 90 60 80 80 80 80 ITSM (AMPS) |£ | W III T0-220 ISOL T0-220 ISOL T0-220 ISOLATED CASE ISOLATED VRRM (VOLTS) 200 CQ 2 2 0 I-6 B S * C Q 2 2 0 -8 B C Q 2 2 0 -8 B R C Q 2 2 0 I-8 B C Q 2 2 0 I-8 B R

BC309 equivalent

Abstract: st 393 8-pin T0-226AE
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)

Diode smd 5j

Abstract: J124 100-c30 C30T06Q C30T06Q-11A FCQ30A06 GCQ30A06 DIODE smd Wj SMD 23k g4 150H2
Contextual Info: SCHOTTKY 13830612 C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

C20T06Q

Abstract: C20T06Q-11A FCQ20A06 GCQ20A06
Contextual Info: SCHOTTKY BARRIER DIODE C20T06Q C20T06Q-11A 22A/60V GCQ20A06 FCQ20A06 FEATURES o 1SQUARE-PAK 1TO-263AB SMD Packaged in 24mm Tape and Reel : C20T06Q O Tabless TO-220: C20T06Q-11A o T0-220AB : GCQ20A06 o T0-220AB Fully Molded Isolation : FCQ20A06 o Dual Diodes - Cathode

Contextual Info: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR

Schottky Diode 40V 6A

Abstract: ST Low Forward Voltage Schottky Diode F16K F16KQ30S F16KQ30SB F16KQ40S F16KQ40SB
Contextual Info: SCHOTTKY BARRIER DIODE F16KQ30S F16KQ40S F16KQ30SB F16KQ40SB 16.6A/30~ 40V FEATURES ° Similar to T0-220AC and T0-220AB Case Fully Molded Isolation ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types

FCQ30A06

Contextual Info: SCHOTTKY BARRIER DIODE C30T06Q GCQ30A06 C30T06Q-11A FCQ30A06 33A/60V FEATURES O | SQUARE-PAKl TO-263AB SMD Packaged in 24mm Tape and Reel : C30T06Q o Tabless TO-220: C30T06Q-11A o T0-220AB : GCQ30A06 o T0-220AB Fully Molded Isolation : FCQ30A06 o Dual Diodes - Cathode

Contextual Info: SCHOTTKY BARRIER DIODE C20T06Q C20T06Q-11A 22A/60V GCQ20A06 FCQ20A06 FEATURES o 1SQUARE-PA k I TO-263AB SMD Packaged in 24mm Tape and Reel : C20T06Q O Tabless TO-220: C20T06Q-11A o T0-220AB : GCQ20A06 o T0-220AB Fully Molded Isolation : FCQ20A06 o Dual Diodes - Cathode

FSH05A06

Abstract: FSH05A06B
Contextual Info: SCHOTTKY BARRIER DIODE sa/6 FSH05A06 FSH05A06B 0v FEATURES o Similar to T0-220AC and T0-220AB Case o Fully Molded Isolation Case oLow Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability OTj=150,’C operation Approx. Net Weight : 1.70 Grams

10KQ100

Contextual Info: SCHOTTKY BARRIER DIODE 10KQ90 F10KQ90 10KQ100 F10KQ100 10KQ90B F10KQ90B 10KQ100B F10KQ100B 1 1 A / 9 0 — 100V FEATURES 0 Similar to T0-220AC and T0-220AB Case ° Fully Molded Isolation Case F-Type ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

MOTOR CONTROL SWITCHES MOELLER

Abstract: T0-2-1-I1-SVB Moeller T0-2-1/I1/SVB IEC EN 60947-3 IEC 60947-3 MOELLER 60947-3 AC-21A IEC/EN 60947-3 moeller VDE 0660 AC21A
Contextual Info: Type: T0−2−1/I1/SVB Article No.: 207147 Sales text ON−OFF SWITCH Ordering information BME−CAT Fotos Produktgruppen−Bezeichnung T0−. Load current switches Main switches, maintenance switches Design Surface mounting Basic type for . insert mounting form

st z7s

Abstract: F5KQ40 5KQ30 F5KQ40B 5KQ30B 5KQ40 5KQ40B F5KQ30 F5KQ30B H122
Contextual Info: SCHOTTKY BARRIER DIODE 5KQ30 F5KQ30 5KQ40 F5KQ40 5KQ30B F5KQ30B 5KQ40B F5KQ40B 5.5A/30~40V l.4 .055> -^MAX9 ^ FEATURES « Similar to T0-220AC and T0-220AB Case 6.8(.268 T 2.85(11) 15.5i.610) 2.55Ì.10) 15.1(.595) o Fully Molded Isolation Case (F-Type) 3.71145),