T-CON LG 37 INCH Search Results

Contextual Info: GMM2739230EPTG LG Semicon Co.,Ltd. Description 8,388,608 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM2739230EPTG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package, 2 pieces of 16 bits Register in 48 pin

Contextual Info: GMM27317230ATG LG Semicon Co.,Ltd. Description 16,777,216 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features The GMM27317230ATG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II

CL31B

Contextual Info: _ . LG . S e m ic o n . G M M2739230ET G 8,388,6os w o r d s X72b i t SYNCHRONOUS DYNAMIC RAM MODULE C o . , L td . Description Features The GMM2739230ETG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II

Contextual Info: ADVANCED POWER Tec h n o lo g y APT5014LVR soov 37a o.i4on POWER MOS V Power MOS V™ is a new generation of high voltage N-Channe! enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: GMM26433233ANTG 33,554,432 WORDS x64bit SYNCHRONOUS DYNAMIC RAM MODULE LG Sem icon Co.,Ltd. Description The GMM26433233ANTG is a 32M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Q65110A2290

Abstract: A67K-G2J1-24 Osram LG A67K-H2K1-24 A67K-F1G2-25 Q65110A2294 Q65110A2293 A67K-G2K1-24
Contextual Info: Hyper SIDELED Hyper-Bright Low Current LED Lead Pb Free Product - RoHS Compliant LG A67K, LP A67K Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: Abstrahlung

mm773

Contextual Info: GMM773421OCT/TG-6/7 LG Semicon Co.,Ltd. 4 ,194,304 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7 7 3 4 2 1QCT/TG is an 4M x 72 bits E D O D ynam ic RAM M O D U L E w hich is assem bled 18 pieces o f 4M x 4bit E D O D R A M s in 24 pin T SO P II package,

flip-flop

Contextual Info: Data Sheet February 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1600FXH Clock and Data Regenerator Features • Integrated clock recovery and data retiming ■ Surface-mount package ■ Single ECL supply ■ Robust FPLL design

Contextual Info: GMM7644243CSG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he O M M 7644243C S G is a 4M x 64 bits E D O D ynam ic RAM M O D U L E w hich is assem bled • 168 pins D ual In-L ine Package - G M M 7 6 4 4 2 4 3 C S G : G old plating

Contextual Info: 17 RR SERIES A M PHEN O L D -SUB M IN IA TU RE REAR RELEASE CRIM P CONNECTOR D esigned for high volum e production, A m p h e n o l’s rear release crim p con ne cto r and con tacts are a cost saver. FEATURES • EMI/ESI shell configuration • Econom ical crim p co n ta ct with insulation

Contextual Info: APT4012BVR A d va n ced P o w er Te c h n o l o g y 4oov 37A 0.120a POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

regenerator

Abstract: LG1600AXD LG1600FXH LG1600FXH0553 LG1600FXH0622 LG1600FXH2488 LG1605DXB TF1004A
Contextual Info: Data Sheet February 1997 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1600FXH Clock and Data Regenerator Features • Integrated clock recovery and data retiming ■ Surface-mount package ■ Single ECL supply ■ Robust FPLL design

TIP135 texas

Abstract: C3691
Contextual Info: TEXAS INSTR -COPTOJ- 8961726 TE XAS bS INSTR D E § flit, 1 7 2 b □□ 3 ^ 1 5 62C 36912 OPTO TIP135, TIP136, TIP137 P-N-P DARLINGTON SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T Designed For Complementary Use With TIP130, TIP131, TIP132 T-33-3 1 70 W at 2 5 ° C Case Temperature

mosfet 350v 30a

Contextual Info: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

GMM7644143

Contextual Info: GMM7644143CSG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7644143C S G is a 4M x 64 b its E D O D ynam ic R A M M O D U L E w hich is assem bled • 168 pin s D ual In-L ine Package 16 pieces o f 4M x 4b it E D O D R A M s in 24/26

Contextual Info: GMM2739233ETG LG Semicon Co.,Ltd. 8,388,608 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Features Description The GMM2739233ETG is a 8M x 72bits Synchronous Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin

Contextual Info: GMM27316233ENTG 16,777,216 WORDS x72BIT LG Semicon Co.,Ltd. Description The GMM27316233ENTG is a 16M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168

Contextual Info: GMM27333230ANTG 33,554,432 WORDS x72BIT LG Sem icon Co.,Ltd. Description The GMM27333230ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II, 2 pieces of 16 bits Register in 48 pin

JEP-106

Contextual Info: GMM7732143CNSG-6/7 LG Semicon Co.,Ltd. 2 ,0 9 7 ,1 5 2 W O R D S x 72 B IT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7732143C N S G is an 2M x 72 bits EDO D ynam ic RAM M ODULE w hich is assem bled 9 pieces o f 2M x 8 bit E D O D R A M s in

Contextual Info: GMM27333233ANTG LG Semicon Co.,Ltd. 33,554,432 WORDS x72BIT SYNCHRONOUS DYNAMIC RAM MODULE Description The GMM27333233ANTG is a 32M x 72bits Synchronous Dynamic RAM MODULE which is assembled 18 pieces of 16M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM

Contextual Info: GMM26416233ENTG 16,777,216 WORDS x64bit LG Semicon Co.,Ltd. Description The GMM26416233ENTG is a 16M x 64bits Synchronous Dynamic RAM MODULE which is assembled 16 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168

Contextual Info: Data Sheet June 1999 m ic r o e le c t r o n ic s group Lucent Technologies Bell Labs Innovations LG1600KXH Clock and Data Regenerator Features • Integrated clock recovery and data retiming ■ Surface-mount package ■ Single ECL supply ■ Robust FPLL design

Contextual Info: GMM7641043CSG-6/7 LG Semlcon Co.,Ltd. 1,048,576 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Features Description T he G M M 7641043C S G is an 1M x 64 bits E D O D ynam ic R A M M O D U L E w hich is assem bled 4 pieces of 1M x 16bit E D O D R A M s in 42 pin SOJ package, o n e 2K

LG1600KXH

Abstract: LG1600KXH0622 LG1600KXH2488 LG1605DXB TF1004A wolaver
Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations LG1600KXH Clock and Data Regenerator Features • Integrated clock recovery and data retiming ■ Surface-mount package ■ Single ECL supply ■ Robust FPLL design ■ Operation up to BER = 1e- 3