T-CON, GATE, SOURCE DRIVE Search Results

TD350I

Abstract: optocoupler 12v 500ma igbt desaturation driver schematic TD350 12v and 500ma transformer vh50 TD350 SCHEMATIC
Contextual Info: TD350 ADVANCED IGBT/MOSFET DRIVER ADVANCE DATA • 0.75A MIN GATE DRIVE ■ NEGATIVE GATE DRIVE ABILITY ■ INPUT COMPATIBLE WITH PULSE TRANSFORMER OR OPTOCOUPLER ■ SEPARATE SINK AND SOURCE OUTPUTS FOR EASY GATE DRIVE ■ TWO STEPS TURN-ON AND TURN-OFF WITH ADJUSTABLE LEVEL AND DELAY

P25N06

Abstract: C33091
Contextual Info: Order this docum ent by MC33091 A/D MOTOROLA ' M C33091A Advance Information High-Side TMOS Driver T he M C 33091A is a H ig h -S id e T M O S D river desig ned for use in harsh autom otive sw itching applicatio ns requiring the cap ab ility of handling high

TRANSISTOR T4 ST

Abstract: STB55NF03L
Contextual Info: STB55NF03L  N-CHANNEL 30V - 0.01 Ω - 55A D2PAK STripFET POWER MOSFET T YPE STB55NF03L • ■ ■ ■ V DSS R DS on ID 30 V < 0.013 Ω 55 A TYPICAL RDS(on) = 0.01 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE

STS12NF30L

Contextual Info: STS12NF30L  N - CHANNEL 30V - 0.0085Ω - 12A SO-8 STripFET POWER MOSFET TYPE STS12NF30L • ■ ■ V DSS R DS on ID 30 V < 0.01 Ω 12 A TYPICAL RDS(on) = 0.0085 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION

STS8NF30L

Contextual Info: STS8NF30L  N - CHANNEL 30V - 0.018Ω - 8A SO-8 STripFET POWER MOSFET TYPE STS8NF 30L • ■ ■ V DSS R DS on ID 30 V < 0.022 Ω 6 A TYPICAL RDS(on) = 0.018 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION

Contextual Info: TOSHIBA 2SJ464 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ464 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 4V Gate Drive

STP60NF03L

Contextual Info: STP60NF03L  N-CHANNEL 30V - 0.008 Ω - 60A TO-220 STripFET POWER MOSFET PRELIMINARY DATA T YPE STP60NF03L • ■ V DSS R DS on ID 30 V < 0.010 Ω 60 A TYPICAL RDS(on) = 0.008 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power Mosfet is the latest development of

IC ap 4600

Contextual Info: MOTOROLA Order this document by MC14600/D SEMICONDUCTOR TECHNICAL DATA Low-Power CMOS A L A R M 1C with Horn Driver T he M C 14600 A la rm IC is desig ned to sim p lify the process o f interfacing an alarm level vo lta g e con dition to a p ie zo e le ctric horn a n d/or LED. W ith an extrem e ly

Contextual Info: HIP6004A HARRIS S E M I C O N D U C T O R P R E L IM IN A R Y Buck and Synchronous-Rectifier PWM Controller and Output Voltage Monitor O cto b e r 1997 Features Description • Drives Two N-Channel MOSFETs T he H IP 60 04 A provides com p le te con tro l and pro te ction for

ser2900

Abstract: JESD22-A114-C lm3434
Contextual Info: LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming General Description Features The LM3434 is an adaptive constant on-time DC/DC buck step-down constant current controller (a true current source). The LM3434 provides a constant current for illuminating high power LEDs. The output configuration allows the

ser2900

Abstract: JESD22-A114-C siliconix FET DESIGN
Contextual Info: LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming General Description Features The LM3434 is an adaptive constant on-time DC/DC buck step-down constant current controller (a true current source). The LM3434 provides a constant current for illuminating high power LEDs. The output configuration allows the

Contextual Info: H A R R IS X HIP6005A Semiconductor Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor A pril 1998 Features Description • Drives N-Channel MOSFET T he H IP 60 05 A provides com p le te con tro l and pro te ction for a D C -D C co n ve rte r op tim ize d for h igh -perform a nce m icro ­

GA3252-AL

Abstract: JESD22-A114-C LM3433 LM3433SQ LM3433SQX 220v ac to 9v dc converter v-chip HCLP2
Contextual Info: LM3433 Common Anode Capable High Brightness LED Driver with High Frequency Dimming General Description Features The LM3433 is an adaptive constant on-time DC/DC buck step-down constant current controller (a true current source). The LM3433 provides a constant current for illuminating high power LEDs. The output configuration allows the

2SK2120

Abstract: LD 33 regulator
Contextual Info: 2SK2120 Si li con N C h a nn el MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

IC4427

Abstract: IC4424 Ic1426 IC4425 IC4452 IC4422 MIC4451
Contextual Info: MOSFET Driver Selection Guide MIC4451/4452 1500pF to 62,000pF 12A Peak Output 0.8£2 O utput Im pedance 25ns into 15,000pF 4.5V to 18V Supply Latch-up Protected W ithstands 5V Negative Swing Surface Mount and High Power Package Available - -0 ° - MIC4451

Contextual Info: A D E - 2 0 8 - 3 5 7 G Z 2SK2553 Silicon N Channel MOS FET 8th. Edition HITACHI Application High speed pow er switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V source

2sk2346

Contextual Info: 2SK2346 Si li con N C h a nn el MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

2SK1950

Contextual Info: 2SK1950 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC - DC

2SJ298

Contextual Info: 2SJ298 Si li con P- Cha nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC

LR 120N

Abstract: M62260FP avr qt 6ka transistor
Contextual Info: MITSUBISHI Dig./Ana. INTERFACE M62260FP CS / BS CONVERTER DRIVER IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) M62260FP is developed to be a 2-channel HEMT driver. Capable of simplifying the peripheral circuits, this 1C permits com­ pact unitized design.

2SK2204S

Abstract: 2SK2204
Contextual Info: 2SK2204 L , 2SK2204 S Si li con N C h a nn el MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC —DC

2sk2247

Contextual Info: 2SK2247 Si li con N Ch a nn el MOS FET Application High speed power switching Features • Low on—resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source. • Suitable for DC - DC converter, motor drive,

Contextual Info: A D E - 2 0 8 - 3 8 4 Z 2SK2569 Silicon N Channel MOS FET 1 st. Edition HITACHI Application Low frequency power switching Features • Low on-resistance. RDS(on) = 2 6 & max- (at VGS = 4 V, ID = 100 mA • 2.5 V gate drive device. • Small package (MPAK).

Contextual Info: 2SK2121 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC