|
TA5645
|
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
71.92KB |
1 |
MMBTA56(RANGE:100-400)
|
|
JCET Group
|
PNP transistor in SOT-23 package, rated for -80V collector-base and collector-emitter voltage, -500mA collector current, with 225mW power dissipation and DC current gain up to 400. |
Original |
PDF
|
|
|
|
MMBTA56
|
|
Shikues Semiconductor
|
|
Original |
PDF
|
|
|
|
PZTA56
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-223 package, with -80 V collector-base and collector-emitter voltage, -500 mA collector current, 1 W power dissipation, and DC current gain of 100, suitable for general purpose amplifier applications. |
Original |
PDF
|
|
|
|
MMBTA56
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-23 surface mount package, with -80 V collector-base and collector-emitter voltage, -500 mA collector current, 225 mW power dissipation, and DC current gain ranging from 100 to 400. |
Original |
PDF
|
|
|
|
MMBTA56
|
|
AK Semiconductor
|
MMBTA56 SOT-23 is a PNP transistor with -0.5A continuous collector current, -80V collector-emitter voltage, 225mW power dissipation, and 50MHz transition frequency in a compact surface-mount package. |
Original |
PDF
|
|
|
|
MMSTA56
|
|
Shenzhen Heketai Electronics Co Ltd
|
PNP bipolar transistor in SOT-323 surface mount package, with 80 V collector-base and collector-emitter voltage, 500 mA collector current, 200 mW power dissipation, and DC current gain of 50 at 10 mA. |
Original |
PDF
|
|
|
|
AD-MMBTA56
|
|
JCET Group
|
PNP transistor in SOT-23 package, rated for -80V collector-base and collector-emitter voltage, -500mA continuous collector current, 350mW power dissipation, with AEC-Q101 qualification and DC current gain up to 400. |
Original |
PDF
|
|
|
|
MMBTA56
|
|
Microdiode Semiconductor
|
SOT-23, Plastic-Encapsulate, PNP Transistor, BASE, EMITTER, COLLECTOR |
Original |
PDF
|
|
|
MMBTA56(RANGE:100-400)
