T-75 HIGH VOLTAGE DIODES Search Results

diode G21

Abstract: FD4A G22 diode LD4RA LD4A SD15 switching diode g21 DIODE diode G23
Contextual Info: ELECTRICAL CHARACTERISTICS SINGLE HIGH VOLTAGE SWITCHING DIODE Forward Voltage V Dice Type HD3A rw m Max. vF Reverse Current T Ir @ lF Max. @ rr * VR Max. V V mA hA V ns 75 1.2 110 1 75 6 Geometry G19 DUAL HIGH VOLTAGE SWITCHING DIODE V Dice Type HD2A Forward Voltage

DSA003720

Contextual Info: SILICON PLANAR HIGH SPEED SWITCHING DIODES HD2A HD3A HD4A I 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE VR IF Continuous Reverse Voltage Forward Current UNIT 75 V 100 mA mW Power Dissipation at T amb = 25°C P T O T 330 Operating and Storage Temperature Range

Contextual Info: OM6OL6OSB OM50F60SB Prelim inary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES |o _ o i © © High Current, High Voltage 60 0V And 1200V. Up To 75 A m p IG B T s With F R E D Diodes FEATURES • • • • •

Contextual Info: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)

diode b32

Abstract: b32 diode BAS21 dual COMMON cathode low leakage diodes DIODE b32 01
Contextual Info: 5bE D I TÎ7057Ô 0007053 b32 « Z E T B SEMICONDUCTOR DICE SWITCHING DIODES Dice type BAS21 Description High voltage single diode "V- o \ " 0 5 ^ ZETEX SEMICONDUCTORS Trr V BR v F Min. Max. at Volts Volts mA HA Volts 250 1.0 100 0.1 200 50* G 24 1.0 75

B0004

Abstract: CDSV3-16-G CDSV3-56-G CDSV3-70-G CDSV3-99-G v50s
Contextual Info: COAICHII* Small Signal Switching Diodes CDSV3-99-G/ 70-G/ 5 6 -G /16G % Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SO T-323 D es ig n ed fo r m ounting on sm all s urfa ce . High s p eed sw itching. 0.059 1.80 High m ounting cap ab ility, strong surge

Contextual Info: 2?QLôMb 0000175 ^1T 1,500 to 20,000 Volts 0.6 to 3 Amps. Standard Recovery SERIES HD O \ 1/4-28 Thread Modular • "Hi-BeP High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number Vrhm V Volt8 Avg.Forward Current Max. If a v m @ T c 75*C

CIL 1302

Abstract: cil 1305
Contextual Info: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT

Contextual Info: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage

BAW62

Abstract: FR 309 diode
Contextual Info: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage

AAAQ

Abstract: N2 SOT23-6 mosfet n3 MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA
Contextual Info: 19-1262; Rev 0; 3/98 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

Contextual Info: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

IC Analog Switch Chip

Abstract: MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T
Contextual Info: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off

1N4000 silicon diodes

Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
Contextual Info: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability

BAS21

Contextual Info: SEMICONDUCTOR DICE SWITCHING DIODES vF V BR> Dice type BA S21 Description High voltage single diode Ir Ip T rr Max. at V R Typical Geometry Min. Max. at Volts Volts mA (jA Volts 250 1.0 100 0.1 200 50* G 24 6 G 25 nS H D 3A Single diode 85 1.0 10 1.0 75 H D 2A

diode g29

Contextual Info: SEMICONDUCTOR DICE SWITCHING DIODES vF V BRI Dice type Description T rr Ir Min. Max. at Volts Volts mA «A Volts nS 250 1.0 100 0.1 200 50* G24 lF Max. at V R Typical Geometry BA S21 High voltage single diode H D 3A Single diode 85 1.0 10 1.0 75 6 G25 H D 2A

B0013

Abstract: CDSF4448 CDSU4448 CDSW4148-G CDSW4448-G smd diode T3 SMD Diode r100ohm
Contextual Info: COMCHIP Small Signal Switching Di des S M D D IO D E S P E C IA L IS T CDSW4448-G Voltage: 75 Volts Pd:400mW RoHS Device SOD-123 Features D esig n ed fo r m ounting on sm all s u rfa c e High sp e e d sw itching. High m ounting c ap ability, strong surge w ith stan d , high reliability.

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

Contextual Info: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION K EY FEAT URES ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED Package Condition UM4000 PD (W) C D • Series resistance rated at 0.5

1N4148 DL-35

Abstract: n4148 1N4148 DL-35 PACKAGE Diode N4148 DL4148 package DO-41 package 1N4148 R1200 R1200F R1500 R1800
Contextual Info: DIODES INC m 35E D 20407=53 ÜQ0Q3b0 T BiDII HIGH VOLTAGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current

Contextual Info: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­

Semicon volume 1

Abstract: HVC-50F s5a1 LTA 902 sx
Contextual Info: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage

S216S02 Application circuit

Abstract: PC113 SHARP GP1U78R GP1S73P S202S02 application IS471FS pt461100 s26md IS489 GP1A71A1
Contextual Info: Solid State Low Po we v o l t a g e R e Chopper R< P M i T i a r v H e Quick Reference Guide Quick Reference Guide • Infrared Emitting Diodes « For IR Data Communication IrDA » Mode! No. Features Operating Suppply Voltage v cc (V) GL1F20 Applicable to IrDA 1.0

Contextual Info: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W  Series resistance as low as 0.25 Ω  Carrier lifetime greater than 2.5 µs