T-75 A HIGH VOLTAGE DIODES Search Results

BAW62

Abstract: FR 309 diode
Contextual Info: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage

Contextual Info: 2?QLôMb 0000175 ^1T 1,500 to 20,000 Volts 0.6 to 3 Amps. Standard Recovery SERIES HD O \ 1/4-28 Thread Modular • "Hi-BeP High Voltage Rectifier Assemblies Repetitive Peak Reverse Voltage HVCA Number Vrhm V Volt8 Avg.Forward Current Max. If a v m @ T c 75*C

CIL 1302

Abstract: cil 1305
Contextual Info: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT

Contextual Info: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

X2G75ND06P1

Contextual Info: X2G75ND06P1 HIGH POWER NPT Low loss TYPE 2-PACK IGBT MODULE • CIRCUIT DIAGRAM 600V 75A PACKAGE : M1 ■ APPLICATIONS ■ FEATURES • Non Punch Through g NPT Technology gy • Fast & soft inverse CAL diodes • 10us short circuit capability • Positive VCE(on) temperature coefficient

K375

Abstract: MKL series vai 27 lf OM35F120PB OM45L120PB OM50F60PB OM60L60PB 50F60 60L60
Contextual Info: OM6OL6OPB OM45L120PB Preliminary Data Sheet OM50F60PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 Amp Dual IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design

em 518 diode

Abstract: d507 M dp 502 t SW-45 ST333S TO-209AE
Contextual Info: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK D-500 To Order Previous Datasheet Index Next Data Sheet Bulletin I25171/B ST333S SERIES Stud Version INVERTER GRADE THYRISTORS Features 330A All diffused design Center amplifying gate

Contextual Info: HF-VHF-UHF VOLTAGE CONTROLLED OSCILLATORS USING HYPERABRUPT TUNING DIODES INTRODUCTION R<1.4 Modem systems require VCO's voltage controlled os­ cillators with stringent frequency range and linearity requirements which can only be met by the use of hyperabrupt tuning diodes such as the Narda HF, VHF,

1N4148 DL-35

Abstract: 1N4148 DL-35 PACKAGE DL4148 package R1200 R1200F R1500 R1800 R2000 R2500 R3000
Contextual Info: DIODES INC 3EE D • 20407=53 Qa003t.0 T BiDII HIGH VOLTAGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -65°C to +150°C Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ Ta Maximum Forward Voltage @ 2 5 °C T A |r Ifm vfm Trr

MU58

Abstract: MU510 MU57 MU59
Contextual Info: Bk MOSPEC MU57 thru MU510 Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

Contextual Info: Bulletin 127096 rev. A 09/97 International IÖ R Rectifier IRK. SERIES INT-A-pak Power Modules STANDARD RECOVERY DIODES Features • High voltage ■ E lectrically isolated base plate ■ 3500 V RMSiso la tin g voltage ■ Industrial standard package ■

Contextual Info: VSK.166, .196, .236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) RoHS • 3500 VRMS isolating voltage COMPLIANT • Industrial standard package

TESLA DIODES

Abstract: PIN DIODE UMX5101 magnetic diode
Contextual Info: UMX5101 ULTRA LOW MAGNETIC MOMENT PIN DIODE FOR MRI APPLICATIONS RoHS COMPLIANT KEY FEATURES The UMX5101 PIN diode series was designed to provide ultra low magnetic PIN diodes for in bore surface coil applications associated with higher field strength 3T and greater MR

Contextual Info: Bk MOSPEC MU57 thru MU510 Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

WSD521S

Abstract: WSD520S
Contextual Info: WSD520S/521S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS P b Lead Pb -Free Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package

GP108

Abstract: GP106 GP104 GP110 GP100 GP101 GP102
Contextual Info: DIOTEC ELECTRONICS CORP SfiE D I EflMIlD? OOOGia^ G73 DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 I DIX Data Sheet No.: GPDG-101-A 'T - o \-\3 1 A M P HIGH RELIABILITY SILICON DIODES VOLTAGE RANGE

WSD520S

Abstract: WSD521S
Contextual Info: WSD520S/521S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS * “G” Lead Pb -Free Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package

BYV255V200

Abstract: 1n5819 MINIMELF PACKAGE BYV255V-200 BAS70WFILM 1N5819 SOD-323 STPS40H100CW 1N5819 SOD-123 1n5817 SOD-123 stth30r03cg STPS1545CR
Contextual Info: Rectifiers High Power Efficiency Quick Reference Guide 20V, 30V and 40V SIGNAL SCHOTTKY DIODES Voltage max V Current (mA) P/N VF max @ IF (V) (mA) 10 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 40 3000 350 100 100 100 100 100 200 200

IC la 4148

Abstract: ic 4148 diode 4148 CDSV3-4148-G N 4148 diode 4448 LA 4448
Contextual Info: C O A IC H II’ Small Signal Switching Diodes S MEj Diodes CDSV3-4148-G / 4448-G Reverse Voltage: 75 Volts Forward Current: 200mA RoHS Device Features SOT-323 Designed for mounting on small surface. High speed switching. H 0 !0 5 9 l!8 0 * High mounting capability, strong surge

1n53338

Abstract: 1N53348
Contextual Info: MOTOROLA SC DIOBES/OPTO 3TE D El b3L7ESS 00fl3flEM T E3MOT7 MOTOROLA T SEM IC O N D U C T O R L" — - iH TECHNICAL DATA 1N53338 thru 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes . . . a complete series of 5 Watt Zener Diodes with tight limits and better operating charac­

SL415

Contextual Info: HIGH SPEED SWITCHING DIODES 250mW/500mW DO-35 CASE 28 SURGE PART NUMBER •■■■ Peak Reverse voltage VRM 1N914 :,:v -v 100 1N4148 1N4150 1N4151 1N4154 1N4448 1N4454 Forwan Voltage wmmm» % 75 75 75 75 50 50 25 75 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0

VSKC

Contextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay High Power Products Standard Recovery Diodes, 165 A to 230 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package

92 um zener diodes

Abstract: MOTOROLA 1N5339B ZENER DIODE 18 volt 1N5370B motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5333B through 1N5388B 5 Watt Surmetic 40 Silicon Zener Diodes This is a complete series of 5 Watt Zener Diodes with tight limits and better operating characteristics that reflect the superior capabilities of silicon-oxide-passivated junctions.