T F 2 D Search Results

Bidirectional Diode Thyristors

Abstract: K2F-6 K2F5 120R-12
Contextual Info: B I-D IR E C T IO N A L D IO D E T H Y R IS T O R S " S ID A C ” Type For trigger applications K2F 5 K2F 6 Type For pulse applications K 2 F -6 D K 2 F -6 E K 2 F -4 D K 2 F -4 E K 2 F -3 D K 2 F -3 E K 2 F -2 D K 2 F -2 E K 2 F -1 D K 2 F -1 E Peak on state current

2SC241

Abstract: 2SC2464 cjgl
Contextual Info: 104 - - m íBt i l fâ T • 2 S C 2 4 0 4 B É Æ fê tt a tt Ä ft i i m 3 f T MHz lc(ntA) 15 C re (p F ) 0 .8 0 IF t i l B E Ä Ä , Pc(mW) 150 PG (dB) Y7V'S'S Tj CC) 150 NF(dB) RF i § t S , t '- f t 2 S C 2 41 □ —A f f i â : Ä i s & i f t a f f l (am ¡ a s * w s , J I

Contextual Info: _ 6 Rev APPROVED: - Description AWO# - Date 9/08/10 RELEASED Appr TITLE: DATE:_ .050 [1 .2 7 ] ft f t ft f t B 4B D I 2 b b 13 b b f t b f i - Q ft f t Î A f t ~ 4 D D D D D B bD bB bD bB Bfl I , .050 [1 .2 7 ] t ft f t ft b b b b b .016 [0 .4 0 ] SQ

FE8V-TC6

Abstract: FE8V-TA6 Yamatake FE8V-TU2 Transistor SCR FE8V-TF6 FE8V-TB6 L0RA Yamatake Corporation FE8V-TA6P
Contextual Info: No . S R. Yamatake Corporation SPECIFICATIONS S PE C IF IC A T IO N S C ATALO G LISTING F E 8 V -T A 6 F E 8 V -T B 6 F E 8 V -T A 6 P F E 8 V -T B 6 P F E 8 V -T D 6 P F E 8 V -T E 6 P F E 8 V -T C 6 F E 8 V -T T 2 F E 8 V -T U 2 F E 8 V -T F 6 SCANNING T Y P E

648P

Contextual Info: 1 . T C 7 4 A C /A C T Series Product Guide. TYPE NO. Function OOP/F/FN QUAD 2-INPUT NAND GATE TOOP/F/FN QUAD 2-INPUT NAND GATE 02P/F /FN QUAD 2-INPUT NOR GATE T 02P/F/FN QUAD 2-INPUT NOR GATE 04P /F /F N HEX INVERTER T04P/F/FN HEX INVERTER 05P/F /FN HEX INVERTER OPEN DRAIN

Contextual Info: T K A f & l l i t t C ry s ta l O s c illa to r E X O -3 C M O S T K I I ^ t i^ l/ C M O S Crystal Oscillator • ^ d i/ F e a tu r e • $ X ‘t< 7)T\ I/ 2 ~ l/ 2 8( I / • 2 5 6 ) b t i t to 50± 2 % U f c X t o • 2 m sec.J^T< 7)¥ '.'^ ttl!f t t t T 'r c

WJ 73

Contextual Info: SILIC O N F A S T R E C O V E R Y R E C T IF Y IN G D IO D E S :>jfE 151 = ORIGIN • it* I. ELECTRIC 7 7 h CO SflE LTD — >\s$ -f I. -y •?■ 2 . f a 7 / ' — i f ¿f <75SJIO/iiCiS&#39;Jiuffl o ~ 400V _r — 2 ' f Z f T - S ' f X t f 'J r t e '- 'o 2. •

TC4052

Abstract: TC4052BP
Contextual Info: TOSHIBA TC4051B P/B F/B FN/B FT,TC4052 BP/B F/B FN/B FTJ C 4 0 5 3 B P/B F/B FN/B FT TO SHIBA CMOS D IG ITAL INTEGRATED CIRCUIT SILICON M O N O LIT H IC T C 4 0 5 1 B P , T C 4 0 5 1 B F , T C 4 0 5 1 B F N , T C 40 51 B F T T C 4 0 5 2 B P , T C 4 0 5 2 B F , T C 4 0 5 2 B F N , T C 40 52 B F T

X3700

Abstract: T10601 nec 2401 uPD16631A 1F42 uPD16631 S240 PD16631A muaj
Contextual Info: MOS Integrated Circuit / P D 16631A 2 4 0 f f l* T F T - L C D ff lV “ - ^ • 64PgKfcfj£ /¿PD16631AU, 64PgfiflS^WH5COTFT-LCDfflV-^ • K ^ - f/<?•*-<> x - ^ A ^ l * , M X # ) WT-'i/ffrXlJT, 6t'-y h X 6 hMdc (2 5 X 2 ffli0 ^ * a p (C « i:U y t t jE S n t 6 4 t t t t * l- < i:* 2 6 7 3 fe 0 7

SW01

Abstract: pmi sw 01 SW02 FQ DG201 DG202 SW-01 SW-01B SW-02 02AA
Contextual Info: - S W -0 1 , S W -0 2 ? K> -J F S P S T S P S T <j j ig ü ü i f t J F E T J F E T u S W - 0 2 ± 1 ií B # P f l[ H ] f S 'C ¿ f e 2 > . •f 7 m t 'f x - , ¿ r 'y í & m tm m 7t * M IL -S T D < 4 X - , T i l l il S l '5 S E -í t lf B X -y ■ ? • K

SUNRISE tray

Abstract: tray sunrise SUNRISE tsop
Contextual Info: 3 2 2 .6 REF C E LL VIEW FR O N T f t 8 f " f BACK t j SECTION C - C T SECTION Û - D & <?/ MpI4 Mtntily cwJ* SECTION E - E 8 -R 2 .M R •6 234 1 / Lt A-34.3 DETAIL : F E . W / PU R CHASING INFORMATION

CHN 541

Contextual Info: FAST C MOS OCTAL I D T 5 4 / 7 4 F C T 2 4 0 T / A T / C T / D T • 2 2 4 0 T / A T / CT BUFFER/ LI NE I D T 5 4 / 7 4 F C T 2 4 4 T / A T / C T / D T - 2 2 4 4 T / A T / CT IDT54/74FCT540T/AT/CT DRI VERS I D T 5 4 / 7 4 F CT 5 4 1 / 25 4 1 T / AT / C T FEATURES:

1300sa

Contextual Info: F T S H -1 2 0 -5 2 -F —D -T H F T S H -1 30—S 2 - L - D - T H - E S F T S H -1 10—51 - L - U - T H -R A SMTI MICRO SPEC IFIC A TIO N S 'f* i 1,27mm .OSO" m icro pitch Impedance m atched tor high speed applications M ated with CLP series) M ats-,.

biffi

Abstract: 210-03A
Contextual Info: - 300 - • WEST ACE t * mìè '/t fé T a = 2 5 ”C € fé s£ 2 10-03, 2 10-03A (Biffi ) * xt m •¥" V c c (V ) | A\ ìI'J ^ TE £ 14 f* m- | Si K ( T « = 2 5 *C ) £ mi m ± # ìì- !d U m^ f- 7 £ (BO TTO M ì* ai & VIEW) & fé 11: m| f e k m fè

Contextual Info: Customer Information Sheet DRAWING No.: SHEET 2 OF 2 M20-6I5XX05 | IF IN DOUBT - ASK | 1 u I u 1M * cL N0 T T° S C A L ~ t \ f\ f\ T t \ f\ f\ f\ f N f n_ N f\ f N f n_ V S P E C I F I C AT I ON S : MATERIAL: M O U L D I N G = PPS U L 94 V -0 BLA C K

AD208

Abstract: AD208AY AD208BY AD246 OAD204
Contextual Info: -351A D 2 08 h =7 > 7 - f y p — >a y u —^ g > A > •-?>-? - T > - r x \ « * f c =fc V i t i i j i B i - b t % & 3 l z T 4 V u — b ÿ f i t z A tn a e & s - j ^ T k J . A D 2 0 8 ¡ ; M * ' J ' ^ ' M t ^ « S J^ í e i i : £ 'J 2 - ¿ 'f ^ T T " ' V — ^ 3 v f f lic

LM1037 IC

Abstract: LM1037
Contextual Info: - 258- LM1037 T i - U ' p • X'f y * 2X4 > ï ’^Ê Ê i t , ^ f c 2 x 4 f f í ; H O T t o > ‘ - X-f n s t n S iK li D C 1 Œ o 5 -2 8 V O S ^ - - - 0 .0 4 % ty p O T T L =• o ( => > h n - a x t l T - f f f c ^ - 5 . 3 É ? IJ S » c « * > ":tg

TA8102P

Abstract: ci ta8102p ta8102 L4W 75
Contextual Info: -3 3 2 - TA8102P ,< 7 -. A t H ~ ' * - y ~7 T • T > 7 ' S ¡ , - 3 7 - i X F 7 7 7"5S-ï - f t ë íOIL f t iS <6 GS K í r B T L T > - r t 2 C H T > - r O T 't J J 0 C D y u - W f v ? r -y 7 W V í — J] X • t L T f f ü T è í" • = M /u , I- è .

TRANSISTOR si 6822

Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Contextual Info: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to

2SJ460

Abstract: S72 MOS
Contextual Info: p ^ - v t ^ n v io s 2 S J 4 6 0 1 ± 2 .5 V E i i ^ ' f U ^ # m o $ > F E T T '& U , A.O f i i / L r t i t t f S Ü Œ T 'lE f t T ' f , Ü T , *»o 7 S ift Ì # § S 'r > ^ 7 x - ^ @ J Ì T § f ê ir g T 'f o IK o t f- h i 2 .5 V T ' i E i i l T ' ^ ^ o

Contextual Info: - 184 N J M 2 2 3 3 B mm. m • « w • 2 A * t T N JM 2233B¡¿, t - ^ - í 7 f 2 A Í J ' l f t í j j í ? A V f f l X ^ 7 f . * « t e 2 K j i - 1 m j j . • ígilSi^H -; : 5 V tvPl ( 4 . 7 5 - 1 3 V ) • Jfii&'ÍRíS'f'fc : l ü M H z ( ± 1 dB ,

IRFD220

Abstract: 1RFD220 IRF022 IRFD221 IRFD222 IRFD223 F14E diode. f-14e
Contextual Info: MOTOROLA SC X S T R S /R F IM E D I b3b?aS4 G G Ö ci ? 2 3 fl | MOTOROLA • I S E M IC O N D U C T O R TECHNICAL DATA IR F D 2 2 0 IRFD221 IR F D 2 2 2 IR F D 2 2 3 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n sisto rs N -Ch ann el Enh an cem en t-M ode

Contextual Info: 2 5 4 5 6 M a n u f a c t u r i n g d at e c o n s i s t i n g o f : 2 d i g i t s f o r t he year Y Y , 2 d i g i t s f o r t he week ( WW) and 1 d i g i t f o r t he day Part^ num ber_ _ J TYCO

NA 440

Abstract: 2SC2348 2SA1022 2SC2347 2SC2349 2Sc23 200kf 220Vc
Contextual Info: -102- /Jvfg-Çffl ¿ h § • 2 S C 2 â : 2 95 fâ T ¡W iS ftW i >7"'i ß y 9 Ê fê im fi ± àê ij Vc e o V 20 Ve b o ( ï ) 5 g Ic(mA) 30 f f f i : AM/FM ÿ ÿ t f f l RF t f f B E f f i l o Pc(mW) 200 NF (dB) T j (°C ) 150 C re (p F ) l-7> ?'/3