T 955 200 20 Search Results

Contextual Info: S PC41A1 SP 40KB Sound Controller MAR. 18, 2002 Version 1.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.

THYRISTOR H 1500 ch

Abstract: H955CHXX thyristor phase control rectifier 955A Power thyristor PULSE thyristor thyristor control circuit 640C H955CH H955
Contextual Info: PHASE CONTROL THYRISTOR H955CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1800 V 125 200-1800 V 125 125 80 80 mA mA 955 A 1500 A 12.50 kA 781 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

6br8

Abstract: 6u8 tube 5BR8 general electric
Contextual Info: 6BR8 5BR8 6BR8 - 5BR8 ET-T979 TRIODE-PENTODE Page 1 9-55 FOR VHF CONVERTER APPLICATIONS TUBES DESCRIPTION AND RATING The 6B R 8 is a miniature tube which contains a sharp-cutoff pentode and a medium-mu triode in one envelope. It is intended primarily for service as

50/TRANSISTOR 955 E

Abstract: TCA955 TRANSISTOR 955 E
Contextual Info: 47E » • ñE35bOS DÜ3S2bl ô « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders

TRANSISTOR 955 E

Abstract: VPS05163 50/TRANSISTOR 955 E
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor
For AF driver and output stages 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163

TRANSISTOR 955 E

Abstract: VPS05163
Contextual Info: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4flSS4S5 0 Q 1 D 1 D 7 Schottky Rectifiers International Center Tap Devices l^m j Rectifier 60-160 Amps 00 A <°C) 60CNQ035 60CNQ040 60CNQ045 35 40 45 60 95 vfm @ ifm T j = 70°C 00 0.48 62CNQ025 62CNQ030 25 30 60 107 0.35

MARKING code 951

Contextual Info: SIEMENS BDP 951 NPN Silicon AF Power Transistors •For AF drivers and output stages >High collector current ■High current gain 1Low collector-emitter saturation voltage ■Complementary type: BDP952.BDP956 PNP Marking Ordering Code Pin Configuration

2N2024 JAN

Abstract: 2N1909-16 CUBF 2N2023-30 F20JC 2N2027 JAN 2N2030 JAN 2N1792 2N1804 2N1807
Contextual Info: Data Sheet No. PD-3.082 INTERNATIONAL RECTIFIER I R 2N1792, 21X11805, 21X11909, 2N2023 SERIES HOAm p RMS SCRs Major Ratings and Characteristics 't r m s 70 - 'T (A V ) @ TC |JSM 50 Hz @ 60 Hz |2 t @ 50 Hz @ 60 Hz <GT dv/dt d i/d t Tj 70* 70* A 65 *

Contextual Info: SS INTERNATIONAL RECTIFIER V ö 55^5T INTERNAT[ONAL D E I 4 flS S 4 5 2 0 D G 4 Ö 2 3 55C R E C T I F 1ER 04823 Ü Data Sheet No. PD-3.082 I« R IN T E R N A T IO N A L . R E C T I F I E R T = - 3 .^ - n 2N1792, SN1805, 2N1909, 2N2Q23 SERIES 11 O A m p R M S

PA66 GF 25

Abstract: datasheet HSR-502 HSR-V15K Sm2CO17 PA6 GF 30 PA6 GF 50 PA66-GF PMC-0701 PLS-080 hallsensor
Contextual Info: 2010 Sensor Technology Reedschalter SMD-Reedschalter S W I TCHING T HE SM A R T WAY Reedsensoren Levelsensoren Magnete Willkommen bei PIC Fortschritt durch Dynamik. Geleitet von unseren Werten Leidenschaft, Respekt, Integrität und Disziplin, entwickeln wir ausgereifte

IC103

Abstract: MARKING code 951 BDP952 BDP956 Q62702-D1339 Q62702-D1341 Q62702-D1343
Contextual Info: BDP 951 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BDP952.BDP956 PNP Type Marking Ordering Code Pin Configuration

FLC301XP

Contextual Info: FLC301XP Füjrrsu GaAs F E T and H EM T Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r iadd = 37%(Typ.) Proven Reliability DESCRIPTION The FLC301XP chip is a power GaAs FET that is designed for

Contextual Info: SUNCON Aluminum Electrolytic Capacitors • 1051C, 1.000 to 2.000hrs. • Do not clean the capacitors using solvent. • Specifications C o n d itio n Ite m s S p e c ific a tio n s Rated voltage V - 160 180 Surge voltage (V) Room temperature 200 225 Category temperature range fC)

PA6-GF

Abstract: HSR-V15K PA6 GF 30 PA66 GF 25 PA66-GF PMC-0701 MS104 datasheet HSR-502 MS-324-4 PA6 GF 25
Contextual Info: 2010 Sensor Technology Reed Switches SMD Reed Switches S W I TCHING T HE SM A R T WAY Reed Sensors Level Sensors Magnets Welcome to PIC Our work is never done. Passion, respect, integrity and discipline are the four core values which drive us to sophisticated

Contextual Info: BD949, BD951, BD953, BD955 BD950, BD952, BD954, BD956 BD949, 951, 953, 955 BD950, 952,954,956 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Amplifier and Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0,90

70RIA40

Abstract: TO-209AE 2N3094 70RIA60
Contextual Info: SbE D IN TER NATIONAL RECTIFIER • 4055455 Q0107G5 1 ■ International Iio r IRectifier Phase Control Thyristors 110 TO 125 AMPS RMS Part number RRM 2N3091 2N3092 2N3093 2N3094 2N3095 2N3096 2N3097 2N3098 2N1909 2N1910 2N1911 2N1912 2N1913 2N1914 2N1915 2N1916

nc 555

Abstract: single phase bridge rectifier kbpc5010 KBPC5010 terminals of kbpc5010 nc555 MB506 kbpc LCHG MB5005 MB501
Contextual Info: KBPC 50005 DC COMPONENTS CO., LTD. R MB 5005 THRU KBPC MB 5010 5010 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 50 Amperes FEATURES * Metal case for Maximum Heat Dissipation

RX20 50

Abstract: 22050R
Contextual Info: RUBYCON AMERICA INC OSE 1 • TIODSIS DOOOSIb 3 | . A - o s - n - o t c a p a c ito rs REB M 8 8 — 1 6 R X 20) MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS ■ RX-20 SERIES [High 1 25°C Temperature Load Characteristics] By the employment of a high performance electrolyte and a special end sealing material,the R X -2 0 series has achieved a wide— 55°C

ULM Photonics

Abstract: ULM 1000 1506 Laser wavelength 1506 nm 11 1506 89081 ULM Photonics GmbH
Contextual Info: 20% 10% 0% Array 1506 6 3 4 2 2 1 32 VCSELs λ = 968 nm 2 4 6 8 Spectral output power 10 dB / div 30% 4 8 Voltage (V) Conversion efficiency 40% Optical output power (mW) ULM 4x8 array characteristic 10 Array 1506 Laser 11 I = 3 mA 955 960 965 970 975 980

Contextual Info: ERICSSON ^ PTB 20135 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP

M34559G6FP

Contextual Info: 4500 07-Dec-07 Evaluation of Subsystem Clock Oscillation Circuit [M34559G6FP-52P] LQFP 10x10 0.65mm pitch Measurement conditions :5.0V,3.0V Model Vcc=1.8V to 5.5V :SP-T2A Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF

lc 945 p transistor NPN TO 92

Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor
Contextual Info: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.

Contextual Info: 2013-1장-수정 2012.11.22 11:20 PM 페이지25 G4-1.25G Mac 1 JETPDF 2400DPI 175LPI T Green-Cap (ELECTRIC DOUBLE LAYER CAPACITORS) Upgrade Green-Cap(EDLC) DH Weldable Terminal Type, High Power Density Type •High Power Density ·Rapid charge and discharge