T 58 G Search Results

bzv 4v7

Abstract: bzv 6v8 ZENER DIODES BZV 85 8V2 5W ZENER DIODES BZV 85 8V2 bzv 4v3 5W zener sgs-thomson 58C18 ZENER DIODES BZV 48 ZENER DIODES BZV 85 ZENER DIODES BZV 48 5V1
Contextual Info: n=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MD K© l[LIÊTO(S !ii!lD@i ZENER DIODES STANDARD ZENER DIODES Type V Z T 'IZ T * min rZT 1 'ZT* max 5W max (Î2) (V) <"»A) / Tam b = 50°C Tj max = 175°C BZV 58 C 3V3 BZV 58 C 3V6 BZV 58 C 3V9 BZV 58 C 4V3

CA158

Abstract: CA358 CA358A lm358 replacement CA0158E CA158A CA258 CA2904 LM2904 LM358
Contextual Info: CA158, CA158A, CA258, CA358, CA358A, CA2904, LM358, LM2904 NO R T DU C E NT PRO LACEM E T OL E RE P OB S E N D E D Data Sheet MM E CO Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications tle 15 58 58 58 A3 58 90 3 290 al,

sick vt 18

Abstract: SW24 SICK 4-pin, M 12 with 120 mm cable sick optic sick waldkirch sick vt 18-2 1BLU HJS 45 MA
Contextual Info: 1 4 8 58 81 19 1 12 58 81 19 58 81 5 T 5 SW24 3 M12x1 1 M18x1 SW24 2 I VT 18-2 04470 S01 VT 18-2 04470 12 58 19 81 w i t h b a ck g ro u n d s u p p re s s i o n 19 SW24 1 M18x1 Photoelectric Proximity Switch 8 M12x1 VT 18-2 4 3 M18x1 SW24 M18x1 2 N F O R M A T I O N

A6W 4d

Abstract: SRAM 6T MT58LC256K18G1 mt 1898 le
Contextual Info: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O, PIPELINED. SCD SYNCBURST SRAM I^ IIC R a N MT 58 LC 256 K 18 G 1 , M T 58 LC 128 K32 G 1, MT 58 LC 128 K36 G 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM

Contextual Info: O M F @ K íílA T D lííl inte! 87C58/80C58 CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER WITH 32K BYTES USER PROGRAMMABLE EPROM 87C 58/80C 58— 3.5 M Hz to 12 MHz, Vcc = 5V + 2 0 % 87C 58/80C 58-1— 3.5 MHz to 16 MHz, Vcc = 5V ± 20% High Perform ance CHMOS EPROM

ST-12

Contextual Info: T h e 58 is a trip le 'g rid super-control am plifier tube recom m ended especially for service in the radio-frequency and interm ediate'frequency stages of a-c receivers designed for its characteristics. T h e 58 is characterized by the small overall size, the dom e-top bulb,

6D6 tube

Contextual Info: 58 TUNG-SOL / TRIPLE 0*10 REMOTE CUT-OFF AMPLIFIER UN IPOTENTIAL CATHODE HEATER 2.5 VOLTS 1.0 AMPERE AC OR DC GLASS BULB B O T T O M VIEW SMALL 6 PIN BASE THE TUNG-SOL 58 IS A TRIPLE GRID VARIABLE MU AMPLIFIER. EXCEPT FOR HEATER RATINGS,ITS ELECTRICAL CHARACTERISTICS ARE IDENTICAL

Contextual Info: Texas Optoelectronics, Inc. DESCRIPTION TIED 57/TIED 58 Silicon Avalanche Photodiode FEATURES The T IE D 57 and T IE D 58 are high speed photodiodes with 10 mil or 30 mih active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications

CT-920CH

Abstract: CT-940CH TOOL-66
Contextual Info: PhNDUIT Power Connector Installation Tooling CRIMPING TOOLING INDEX CT-2001 Battery Operated Hydraulic Compression T o o l. 58 CT-2001 Compression D ies. 58 CT-2920 Battery Operated 12 Ton Hydraulic Compression Tool . . 59

Contextual Info: DO NOT SCALE DIMENSIONS o@ [p gag « £ ÍN mm THJPD ANCLE M E T R I C PROJECT ION D c NOTES. 1 . ATTENUATION « 0 , 3 dB, PA R T NUMBER 'L ' 0 -0 3 4 9 2 58 -1 0 - 0 3 4 9 2 5 8 —2 0 -0 3 4 9 2 58 -3 0 -0 3 4 9 2 5 8 -4 0 -0 3 4 9 2 58 -5 O—0 3 4 9 2 5 8 —B

DS90C583

Abstract: D SUB 15 MALE VGA PIN OUT 30 pin LCD connector CH-4542 DS90CF584 PC104 connector 20 pin lcd VGA 15 PIN wiring DIAGRAM DS90C563 lcd 7" 18-bit digital
Contextual Info: TECHNICAL USER'S MANUAL FOR: PERIPHERAL BOARD MSLVDS- T ransmitter MSLVDS- R eceiver Nordstrasse 11/F CH- 4542 Luterbach Tel.: +41 0 32 681 58 00 Fax: +41 (0)32 681 58 01 Email: support@digitallogic.com Homepage: http://www.digitallogic.com DIGITAL-LOGIC AG

SMS3230

Abstract: v706 B3411-LH thomas and betts FIBER OPTIC connector V4015D B348 T702TIW SR100-GC B3447 sr100
Contextual Info: T&B Surface Raceway Systems Overview. . . . . . . . . . . . . . . . . . . . . . . . . . 2-3 Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . 4-5 Metallic Surface Raceway . . . . . . . . . . . . . . . 6-33 Nonmetallic Surface Raceway . . . . . . . . . . . 34-58

SS502

Abstract: M502 Q60218-Y34 Q60218-Y58 BSY34 Scans-0010549
Contextual Info: NPIM-HF-Transistoren für Schalteranw endungen B S Y 34 B SY 58 B S Y 34 und B S Y 58 sind doppeltdiffundierte epitaktische NPN-Silizium-HF-Transistoren in Planartechnik im Gehäuse 5 C3 DIN 41 873 T O -39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.

F2034

Contextual Info: 3 PART NUMBER 7432E02253 0 7332E0225S0 LEAD FR EE VERSION MARKING 7 432 E 0 2 2 58 0 I L L 7 332 EO 2 2 58 0 I L L High cycle l i f e cl u r a t o ns ma r t c a r d c o n n e c + o r wit h a n cln g t y p e c o n t a c t s me c h a n i s m . T h e landingt y pe

Contextual Info: •7 0 1 T IED 5 7 / T IE D 58 S ilic o n A va la n c h e Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TIED 57 and TIED 58 are high speed photodiodes with 10 mil or 30 mil' active area diameters. Both are designed to operate in the reverse voltage avalanche mode. Applications

BCY 59

Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Contextual Info: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­

BUW58

Abstract: leistungstransistoren Q62702 Q62901-B11-A Q62901-B50 U110 BUW57 ES1010 KT 117
Contextual Info: BUY 57 BUY 58 BUY 73 D re ifa c h d iffu n d ie rte N P N -S iliziu m Leistungstransistoren BUY 57, BUY 58 und BUY 73 sind dreifach-diffundierte NPN-Silizium-Leistungstransistoren im Gehäuse 3 A2 DIN 41 872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden.

BCX58

Abstract: C621 c619 bcx 58 k C618 MC908Q1CP Q62701
Contextual Info: IMP N -Transistoren fü r l\IF -V o r- und T reib erstu fen sow ie S chalteran w en dungen BCX 58 BCX 59 BCX 58 und BCX 59 sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnl. S O T -3 0 . DieTransistorensindfürden Einsatz in NF-Vor- und Treiber­

PC-58

Abstract: PC58 R5J75R
Contextual Info: Power Resistors PC-58 Type Wirewound Radial/Lug Terminals Radial Lead Power Resistors For PC Boards Drawings Not to Scale PC-58 Type Features_ • 5% Tolerance • Vitreous Enamel/Silicone • PC Board Mounting • R adial lead co n stru ctio n for d ire c t insertion into printed

D 1481 N 60 T

Abstract: diode 1481 RECTIFIER DIODE 1000A 65-106
Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 1481 N 58 . 68 T N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

RECTIFIER DIODE 1000A

Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 711 N 58 . 68 T N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage

Contextual Info: EXTRAS CONNECTORS FME CRIMP Universal connector for RG-58 NM O TLPSCUD TIP m ount 1 6 ' Dual shield stranded center coax No connector MPL CRIMP M ini-U H F PL 2 5 9 crim p con­ nector for RG-58 \ NMO TIP DS T IP m ount 1 7 ' Dual shield strand- TNC CRIMP

BUW58

Abstract: BUW57 BUW73 Q62702 Q62901-B11-A Q62901-B50 Q62702-U263
Contextual Info: BUW 57 BUW 58 BUW 73 N P N -S iliziu m -Leistu n g stra n sisto ren V o r lä u f ig e D a te n B U W 57, B U W 58 und B U W 73 sind N PN -Silizium -Leistungstransistoren in D reifachdiffu­ sionstechnik im Gehäuse 3 A 2 DIN 41 872 T O -3 . Der Kollektor ist mit dem Gehäuse elektrisch

Contextual Info: TOSHIBA-. E L E C T R O N I C 02 TA7089P DE | ^ 7 2 4 7 D O I W T t. T'58'U - 2 3 BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC GENERAL PURPOSE VOLTAGE REGULATOR. Unit in imn . Low Output Impedance : ZD =40mil Typ. 14 1 3 12 . High Ripple Rejection : RR=48dB(Typ.)