T 402 TRANSISTOR Search Results

700 allen-bradley

Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 00312 Series D T - 3 3 - f "5 PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes *700 Volts FEATURES • High Voltage Rating - 700 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

A22 T transistor

Abstract: RS Components transistor t03
Contextual Info: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)

diode sy 162

Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"

cd4538b application

Abstract: CD4538B MC14538 equivalent CD45388 15-V CD4098B MC14538 RCA-CD4538B
Contextual Info: G E S OL I D STATE 01 DEI ' 3 fi 7 S 0 f l l - : : G0 1 3 4 0 2 4 i ~402 _ _D T - 5 H f CD4538B Types CMOS Dual Precision Monostable Multivibrator High-Voltage Types 20-Volt Rating Features: • Retriggerable/resettable capability ■ Trigger and reset propagation delays

tungsram

Abstract: rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N r a d i o - television SEITE AUSGABE: OKTOBER E E 1 - 8 Der Taschenempfänger "QUARTZ - 402" setzt die Reihe der Impor­ te ähnlicher Empfänger aus der Sowjetunion fort. Abgesehen von

PLB16002U

Contextual Info: -7 = -3 3 - O S ' P re lim in a ry s p e c ific a tio n P h ilip s S e m ic o n d u c to rs PLB16002U SbE D 711GÛEt 0 0 M b 402 3b2 FEATURES D E S C R IP T IO N • Input m atching cell allows an easier design of circuits • Diffused em itter ballasting

sot-363 702

Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

b20100

Abstract: ptc 205 ir 520 T0-204MA
Contextual Info: Series PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes * 700 Volts FEATURES • High Voltage Rating - 7 0 0 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators • PWM Inverters

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

Contextual Info: H m www S M lC ITßSQ uil « » mm W « w «UPI W « 1^0 Commerce Drive Afxfx Montgomeryville, PA 18936-1013 Tel: {215 631-3840 o n « o U 1 4 U U ” d> RF & MICROWAVE TRANSiSTORS 9Q0-960MHZ CLASS C, BASE STATIONS G LA S S C T R A N S IS T O R FREQUENCY

C2223

Abstract: HR-R capacitor C2223 ic C2223-18 2238 capacitor 24v
Contextual Info: M i c r o s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 2 2 2 3 - 1 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQ ïNCY 7. ? .-? 3GHz POWER OUT 18.SW POWER GAIN fi 5dB VOLTAGE ?4 (IV HERMETIC PACKAGE

Contextual Info: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING

4027 ram

Abstract: 4027-3 ITT 4027 pin diagram 4027 4027 ttl 56482
Contextual Info: Signetics Memories - R A M 4027-4096 Bit Dynamic RA M C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 4 0 2 7 is fabricated with n-channe! silicon gate tech­ nology fo r high perform ance and high functional density, and uses a single transistor d ynam ic storage cell and

thermistor 100k

Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Contextual Info: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,

ku 606

Abstract: KT808AM transistor d 808 transistor kt transistor 805A 2110-B1 KT 805 RFT Transistoren KT808 2107B-2
Contextual Info: SERVICE-M ITTEILUNGEN VEB IN D U S T R IE V E R T R IE 8 R U N D F U N K U N D F E R N S EH EN ra d io -television AUSGABE: SEITE 1-4 DATUM: 3.84 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / SI E I H B A U A N L E I T Ü H G für den äquivalenten ?DE-Steckbaustein mit Transistor, der die Rohre 6 Sch 5 P in den Sü-Paxbfernseh^eraten RADUGA 726/730 ersetzt«

PT9704B

Abstract: PT9700B 97028 PT9703B PT9701B PT9702B 9703b PT9703 PT-9700
Contextual Info: MOTOROLA SC 4bE D XSTRS/R F • b3b?2S4 0013130 5 ■PlOTt T=-3 3 - 0 I MOTOROLA ■i SEM ICONDUCTOR TECHNICAL DATA PT9700B Seriös The RF Line UHF Pow er T ran sisto rs TO 400 MHz 5 TO 30 WATTS UHF POWER TRANSISTORS NPN SILICON . . . designed primarily for wideband, large-signal output and driver amplifier stages in

PT9734

Abstract: arco 404 PT9730 Arco 403 PT9731 ARCO 0.1 Z PT9732 PT8731 9730 motorola SO 402 NH
Contextual Info: MOTOROLA SC X S T R S /R F MbE D m b 3 b ? 2 S 4 00=15143 S MOTOROLA “T SEMICONDUCTOR - 3 ^ O ( TECHNICAL DATA PT973p Series The RF Line V H F Pow er Transistors . . . designed primarily for wideband, large-signal output amplifier stages in the 30-200 MHz frequency range.

Halbleiterbauelemente DDR

Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen­ arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der

MAX811LEUS-T

Abstract: ETC812JU ETC811 KJXX lmXX
Contextual Info: ETC811/ETC812 Microprocessor Reset Circuits Description Pin Configuration The ETC811/ETC812 are inexpensive microprocessor supervisory circuits that monitor power supplies in microprocessor based systems. The function of these devices is to assert a reset if

ETC809SU

Abstract: ETC810JU ETC810LU MAX810JEUR ETC810
Contextual Info: ETC809/ETC810 Microprocessor Reset Circuits Description Pin Configuration The ETC809/ETC810 are inexpensive microprocessor supervisory circuits that monitor power supplies in microprocessor based systems. The function of these devices is to assert a reset if the

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

i678

Contextual Info: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in

402 rp transistor

Abstract: TGF4230-EPU
Contextual Info: TGF4230-EPU, POWER MICROWAVE HFET • 0.5 |am x 1200 |am FET • 28 dBm Output Power at 1-dB Gain Compression at 8.5 GHz • Power Added Efficiency 50% at 8.5GHz • 8.5dB Typical Large Signal Gain at 8.5GHz

acrian RF POWER TRANSISTOR

Abstract: 58W45 2023-6T microwave amplifier 2.4 ghz 10 watts 2023-15 acrian inc
Contextual Info: T? ACRIAN INC GENERAL DE I D lflE T T fl 000142D 4 | 2023-1.5 D E S C R IP TIO N 1.5 WATTS - 22 VOLTS 2.0-2.3 GHZ The 2023-1.5 is an internally matched common base transistor providing 3 watts of RF CW output power across the 2000-2300 MHz band. This hermetically sealed