T 250 N 1600 Search Results

EUPEC TT 105 N 12

Abstract: EUPEC TT 251 N 14 EUPEC powerblock TT251 N 14 erl 35c EUPEC tt 250 n EUPEC powerblock TT251 powerblock tt 251 n EUPEC tt 251 n Eupec TT251 DDG1123
Contextual Info: L IE EUPEC 34032^7 D 0001122 TbT IU PEC T T 250 N, TD 250 N, D T 250 N Elektrische Eigenschaften Electrical properties Höchstzulässige W erte M axim um rated values P e r io d is c h e V o r w ä r ts - u n d R ü c k w ä r ts - S p it z e n s p e r r s p a n n u n g

Contextual Info: 5EMIKRDN V drm V rsm V rrm Irms1> Volw = 4 l/min., Tw = 40 °C, ED = 50 %, n = 10 V 280 A 580 A 1200 SKIW 250/12 SKIW 500/12 1400 SKIW 250/14 SKIW 500/14 1600 SKIW 250/16 SKIW 500/16 Symbol Conditions SKIW 250 VoU = 4 l/min, T w = 40 °C, ED =100 % 250 A

Contextual Info: LM H6601 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Texa s In s t r u m e n t s Literature Number: SNOSAK9D t - . * O cto b e r20 Q w Semiconductor LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Am plifier with Shutdown Features

A190A

Abstract: a190d A500LC GE A390C Rectifier Diode 1N3735 1N4045 A190 A197 A197A A390
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

"scr manual"

Abstract: A397 Metric Torque Specifications for copper Bolts GE SCR Manual scr manual A397PB General electric SCR manual metric bolts torque m 32 A397A 1N3735
Contextual Info: RECTIFIERS 250 TO 740 AM PERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) io<u - - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

GE SCR Manual

Abstract: "scr manual" scr manual GE A390C Rectifier Diode general electric a390e A390 ge a390t Dow corning 744 1N4053 GE SCR 1000
Contextual Info: RECTIFIERS io<u - 250 TO 740 AMPERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

Contextual Info: 250 mW EPITA XIA L PLANAR DIODES D a ta Sheet Semiconductor Mechanical Dimensions JEDEC DO-35 . t .060.1 n .120 .200 " I . 1.00 tVD. r 1 t Features • INDUSTRY STANDARD DO-35 PACKAGE ■ MEETS UL SPECIFICATION 94V-0 ■ PLANAR PROCESS ■ 250 mW POWER DISSIPATION

IN4106

Contextual Info: K n o x S e m ic o n d u c t o r , In c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NU M BER N O M ZEN ER VOLTAGE Vz @ 250 nA VOLTS M AX ZEN ER IM PED ANCE Z zt @ 250 ^iA (OHM S) M AX REVERSE LEAKAGE CU R REN T Ir @ Vr (|iA dc)

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE

5d22

Abstract: BUL 128 A 5d-22 centrifugal blowers 4250A 4-250A
Contextual Info: 4-250 A /5D 22 PO W ER TETRODE GENERAL DATA Electrical: F ila m e n t, T h o ria te d T ung sten: 5 .0 . ac o r dc v o l t s V o lt a g e . C u r r e n t . 14.5 amp T ra n sco n d u c ta n ce A p p ro x .

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NU M BER N O M ZEN ER VOLTAGE V z @ 250 iA (VOLTS M AX REVERSE LEAKAGE CURRENT Ir @ Vr (nA dc) (Vdc) M AX ZEN ER IM PED ANCE Z zt @ 250 |iA

GU 2-125

Abstract: Elec-Trol R4561-2 ELECTROL R2677-2
Contextual Info: G E Pow er Electrolytic Capacitors 105 ° C Product 50 to 250 WVDC 250 to 150,000 uF — E X T E M M rT m P E fW W M • t im Broad Capacitance Range • Increased Volumetric Efficiency • Low E S R • Standard Ratings â Genera! Specifications r C A P A C ITA N C E RANGE -

diode D83

Abstract: D83 - 004 d83 004 diode D83 004 D22 diode marking code r63400 D51X d95-3000 D93G D75-1100
Contextual Info: T W L À M I N A S J EN ISO 9001:2000 v^Z ertifik a t: 75 .1 0 0 .6 7 3 TUV Rheinland InterCert SEMICONDUCTOR POWER DEVICES DIODES , €UROPRODUKT 2004 Marking D61D - 250 - 22 - N O -Œ D -D special requirements and selections code external leads code base code for stud types letter sign

Semikron SKB b 80

Abstract: P5100 semikron skb 60 skb15 Semikron SKB b 500 SKB 7 02 Semikron SKB 7 02
Contextual Info: SEMIKRON V rsm l[ VvRMS V rr m V 200 1 5 A Tease = 1 1 7 ° C 5 A ( T amb = 4 5 °C ) Rmin Types V n 60 400 125 800 250 1200 380 SKB B 80/70-4 SKB B 250/220-4 SKB B 500/445-4 1600 500 V(BR) VvRMS 1300 500 Avalanche Type SKBa B 500/445-4 0 ,5 1 2 Tamb 2

R250B

Abstract: senisys r-250 reflective R-250-A R-250-B R250-B R250A
Contextual Info: N O T IC E SEE ORDER OF DATA FOR ERRATA IN F O R M A T IO N GËS33Î3M R-250 Series 0.090 C 2591 0.080 2.033 0 00 1 2 3 0 ^ 7 f flS E N I Reflective Optical Switches 34*^730 DIMENSIONS ARE IN INCHES CM ILH M ETERS3 va VF 40E D Continuous Forward

ir*4s

Abstract: rg91
Contextual Info: IRF644S A d van ced Power MOSFET FEATURES B V DSS = 250 V ♦ A va la n ch e Rugged T e ch n o lo g y ^D S o n - ♦ Rugged G ate O xide T e ch n o lo g y ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a

Contextual Info: EUPEC blE D • 3 M 0 3 E ^ 7 0 0 D 1 1 2 2 Tb^ H U P E C T T250 N, TD 250 N, DT250 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state

Contextual Info: TUSONIX DISC CERAMIC CAPACITORS 3848 3858 3878 3888 LE A D S P A C IN G S 250/6 35 250/6 35 250/6 35 2 50/635 25 0 /6 3 5 375 /9 5 2 3 7 5 /9 5 2 37 5 /9 5 2 375/9 52 37 5 /9 5 2 375 /9 5 2 3 7 5 /9 5 2 22 22 22 22 22 22 22 22 20 20 20 20 N O T E M IN CAP

K625

Abstract: D041 PFR2502 PFR2504 PFR2506 PFR2510 VS16
Contextual Info: 25 Amp Press Fit SILICON AUTOMOTIVE RECTIFIERS Mechanical Dimensions Description -.100 .500 Typ .400 Max. H PFRXXXX = + PFRXXXXA = - h41 T .250 i. ^ I .504 Typ .100 Typ I*it— ; - .625 . ? 1“ P T»P Features • LO W C O ST ■ LOW LE A K A G E C U R R E N T

inGaAs photodiode 1550 array

Abstract: pin Photodiode 1550 nm photodiode Photodiode Array linear photodiode array 1550 nm inGaAs photodiode 1550 pin photodiode 1550 pin Photodiode 1300 nm PIN photodiode ps p-i-n photodiode 10 Ghz
Contextual Info: PDCA12-68 12 Channel InGaAs p-i-n Photodiode REV 09/01 Features Specifications T=25°C 1x12 p-i-n- photodiode array Parameter Sym Min Typ Max Unit Array pitch 250 µm Diameter of light sensitive area 68 µm Responsivity λ = 830 nm R 0.45 Individual pads for each photodiode

Contextual Info: IRFW/I644A A d van ced Power MOSFET FEATURES B V DSS = 250 V ♦ A va la n ch e Rugged T e ch n o lo g y ♦ ^D S o n - Rugged G ate O xide T e ch n o lo g y ♦ Lo w e r Input C a pa citance lD = ♦ Im proved G ate C harge ♦ Extended Safe O pe ra ting A re a

semikron skb 60

Contextual Info: s e m ik r d n fll3bb?l D O D b M O D Hbfl V rsm V vRM S V 200 400 800 1200 1400 1600 V 60 125 250 380 440 500 V B R VvR M S min 1300 V 500 (T a m b = 45 15 A °C ) Types R m in SKB B 80/70-4 SKB B 250/220-4 SKB B 500/445-4 0,5 1 2 Id c l Ifsm \h Prsm Vf

Contextual Info: 1775470 C O D I SEM ICO N D U CTO R INC _ 90D 00565 - T D D E 1177SM 70 D T- hO OODDSbS S 7 1"~ I II U U T !?m m ? U J CODI Semiconductor, Inc. IB 'I 400mW ZENER DIODES LOW NOISE CHARACTERISTICS 1N4614 LOW CURRENT OPERATION AT 250 ¿¿A thru LOW REVERSE LEAKAGE CHARACTERISTICS

T 955 200 20

Abstract: 2N3094 2N1798 70RIA60 2n1794 2N1800 ST080S12P 2N2029 2N3096
Contextual Info: tu — loiiului Thyristors x^ K i n e c u n e r P h a s e 110-125 C o n troAmps 1 T yrms pe Part Number Vd RM V 2N1792 2N1793 2N1794 2N1795 2N1796 2N1797 2N1798 2N1799 2N1800 2N1801 2N1802 2N1803 2N1804 50 100 150 200 250 300 400 500 600 700 800 900 1000