T 056 Search Results

A409

Abstract: A102 A164 A191 A255 A294 A312 A347 A361 A450
Contextual Info: « 2 1 ^ 2 M # 10 0 fé I^ ê t t M A R U W A ^ — K # ^ 5344 Í E - ^ E Í 1 3 M (T E L « 21 ^ 2 M 5 ÄA 0561-51-0839) 21 ^ 3 3 E ^ if t lS ftjW E i^ ^ W - g ^ T f E « t ^ iT E V ^ c L S t o ^ f c \ iT E ^ « T f Ä ^ L T f c '^ t o E (1)4 4.^«ffi

DTIC 44-3x82.0 cvS

Contextual Info: Leclanché Capacitors Avenue de Grandson 48 1400 Yverdon-les-Bains, Switzerland Da t e n b l a t t / d a t a s h e e t Anwendung/Application: Kondensator für die Blindleistungskompensation AC capacitor for power factor correction Standards EN 60831-1/2, IEC 60831-1/2, VDE 0560-46/47

DTIC 44-3x166.0 cvS

Contextual Info: Leclanché Capacitors Avenue de Grandson 48 1400 Yverdon-les-Bains, Switzerland Da t e n b l a t t / d a t a s h e e t Anwendung/Application: Kondensator für die Blindleistungskompensation AC capacitor for power factor correction Standards EN 60831-1/2, IEC 60831-1/2, VDE 0560-46/47

dl3008

Contextual Info: ST D E |t,4 2 7 S 2 5 6427525 O CD St^ fl | - N E C~ E L E C T R O N I C S INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATION SEC LASER DIODE ELECTRON DEVICE N D L3008 D A D .V D A P P L IC A T IO N A! G a A s D O U B L E H E T E R O S T R U C T U R E L A S E R D IO D E

6016C

Contextual Info: T H I R DA N G L EP R O J E C T I O N 日TEM ALTERATION I S S U E I DESCRIPTION ICompany n a m e changed CODE CAPACITANCE F ヰ L DIMENSIONS W H e1，e2 g TYPE E， H I H563) (X9 O . 056 ( 4 7 3 ) . t : O .1 3 . 3 t : . 3 . 15 : ! : . 1 O 48 . 8 t : .

DIODE Z54

Abstract: Laser microphone NDL3008 nec laser diode J22686
Contextual Info: ST D E |t.4 2 ? S 2 5 6427525 □□□St.3T fl | - N E C~ELECTRONICS INC 59C 05639 T-41-05 D TENTAIVE SPECIFICATIO N NEC LASER DIODE ELECTRON DEVICE NDL3008 DAD,VD APPLICATION AIGaAs D O UBLE HETERO S T R U C T U R E LASER DIODE SEP. 7 ,1 9 8 4 D E S C R IP T IO N

104S14

Contextual Info: _ ~5T 6427525 N E C E L E C T R O N IC S 59C IN C 05641 T-41-05 D t.457SES DD O S b 4 1 b ’ J ” TENTATIVE SPECIFICATION NEC LASER DIODE ELECTRON DEVICE NDL3009 D AD , VD A PPLICA TIO N AIGaAs D O U B LE HETERO S T R U C T U R E L A S E R D IO D E SEP. 7,1984

Contextual Info: TH IRD AN GLE P R O JE C T I O N A L T E R A T I ON ISSUE ITEM CODE E C Q E 4 10 3 R T // 4 1 2 3 R ( ) T 4153R( ) T // 4 1 8 3 R ( ) T 4223R( ) T // 4 2 7 3 R O T 4 3 3 3 R ( )T // 4 3 9 3 R ( ) T // 4 4 7 3 R ( ) T // 4 5 6 3 R ( ) T // 4 6 8 3 R ( ) T

str g 5551

Abstract: TC-6171 1j3z PA33
Contextual Info: -J — 5 7 . 1~ - — C o m p o u n d T ra n sisto r AN 1L3N i & i t F*3/ScPNpx 4# !J= 3> b ^ & o^ T Xi£t/t £ f t /t L T t a R i = 4 . 7 kQ, R 2 = 10 kQ B O — V W Ri t => > 7° >J / > 9 'J T i t ffl T" è 1 1 - 0 o A A1L3N ( T a = 2 5 °C ) II a u ? ?

STK-056

Abstract: stk056 stk power amplifier ic STK power amplifier STK 056 Sanyo STK ft 232 RL a3155 STK IC
Contextual Info: M U S • W S S fè/T E N T A T IV E SPECIFICATION STK-056 THICK FILM INTEGRATED CIRCUIT 20W min. A F 20 Watts min. AF Power Am plifier 2 Power Supplied *# Maximum R a tin g s/T a=25°C II Wc±mMw± g IE ^ Ìt ^ fe W^ m ÌfÉSSIWE ik m m ±32 V cC m ax

2SA1612

Abstract: 2SC4180 LEMD
Contextual Info: NEC # > ' i; z i > h t . ? S ilic o n T r a n s is t o r iü O M 'h & W 'B T k I ' ' 4 7"'J y KICffl t U f t l t t . o L Ë a Æ ifL ^ ip g if^ ;* ; ë 2 .1 + 0 .1 1 .2 5 ± 0 .1 v >0 hFE : 600 T Y P . I c=1.0 mA) O 2SA1612 t 3 > 7‘ U / > 9 'i T ffM T"ë

Contextual Info: t s m o in s ’on e Ni MVd a ##a ^ ± T B .8 5 CONTACT [0751 N o . 10 N 0 T E 1 . T H E I N S U L A T O R S U P P L I E D . T H E N 0 T E 2 . T H E CONTACT A S S E M B L E D O T H E R C O N T A C T No.1 P A R T S A S S E M B L E D WITH ARE IS C O N T A C T

2SK464

Abstract: transistor 5555
Contextual Info: NEC M O S Field E ffe c t P o w e r T ra n s is to r m ^ T iv c x _2SK464 N ^ t i ' ^ ' ° 7 -M O S X > r *y 5 1 > 7 FET f t i i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK464Ü , N b if f i t i , - f j u m p - t y —MOS F E T t \ X f y f v / i f t t t

2SK819

Abstract: jb 5531 T108 diode B3F TC-6273 nec p- channel 815 I-616
Contextual Info: MOS Field E ffe c t P o w e r T ra n s is to r 2SK819 N f t ^ 7 -M < X O S FET ' f i i f f l 2SK819 l i , N f + $ ; i y T t > m ¡ t> lË •y f- > # < , X f y f > ^ I t ^ Æ ftBm h P ' ' 0|7 - M OS F E T t L T Ü 9 , M a iÈ X ( M : mm -i DC-DC a > / < - ? H t l f t o

Contextual Info: DRAW I MS MADE !N THIRD ¿N G LE P R O JE C TIO N THIS DRAWING IS UNPUBLISHED. COPY RIGHT 13 RELEASED SY AMP FOR LOC PUBLICATION INCORPORA T E D . ALL AF I N TEPN A T 1 ONAL R IG H T S R E SE R V E D . D IS T REVISION S 50 D E SC R IPT IO N REDRAWN PER 0710-0569-95

TYN 606 SCR

Abstract: tyn 406
Contextual Info: / I T * 7 / S G S -T H O M S O N [ f M œ id d M O K S T Y N 0 5 6 — > T Y N 1 0 0 6 SCR FEATURES • HIGH SURGE CAPABILITY ■ HIGH ON-STATE CURRENT ■ HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 056 —> TYN 1006 Family of Silicon Con­ trolled Rectifiers uses a high performance glass passi­

JACS-1754-4

Abstract: M34P75C4F 20D8 JAE connector avss0 JACS-1754 103-146
Contextual Info: V IÏ ' ON B DATE ÜS REV. 91/ L E 0 L P S 2 ON I MV H Q 12 . Nov. 2 0 0 8 DCN NO. 056919 S: M & DESCRIPTION THE L I S T COMPONENTS P A R T LY CHANGED K H DR. WAS S 1 APPD. * U APPD. K. MI YAMOTO T. KUME CH K. Y. WAT ANABE 1 . 5 DE T A . NOTE1. 2. APPLICABLE

Contextual Info: ThomasÊBetts Two-Piece Connectors XD/P System GUIDE POSTS MIDPLANE/SHROUD MALE XD/P” CONNECTORS T O UW9571 M E6O90O a t e r ia ls Stainless steel, passivated Ordering Information CATiir- T GPK-05-3 GPK-05-3 r 13.21 .520 14.99 (.590) 142 to 2^1 (.056)

MT460

Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
Contextual Info: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E

Contextual Info: V 1 ‘ ON %-n B të ft Z81720LPS eNiMVija -^#M m ( 2 .5 M I N DON DA T E REV. 31. Jan. 2005 ) ^ i ñ ^ DESCRIPTION NO. 056682 ADDED NEW DR. PRODUCT NO, fi. Ü£ CHK. AP PD. AP P D. K.INOUE |0— 1 .2| C O N N E C T O R O U T L I N E 9&m-s xju NOZZLE DIMENTION

82S123 programming

Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
Contextual Info: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO

SIGNETICS prom

Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
Contextual Info: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO

marking TH

Abstract: 250VDCX
Contextual Info: THIRD ANGLE PROJEC T I O N | I TEM CODE E C Q E 2 10 3 R T // 2123ROT // 2153ROT // 2183ROT // 2223ROT // 2273ROT // 2333ROT // 2393ROT // 2473ROT // 2563ROT // 2683R ( ) T // 2823R ( ) T // 2 10 4 R ( ) T // 2 124ROT // 2 154ROT // 2 18 4 R ( ) T // 2224R ( ) T

Contextual Info: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &