SYMBOLES DIODES Search Results

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Schottky Barrier Diodes

Abstract: symboles IRM VRM
Contextual Info: SCHOTTKY BARRIER DIODE 2 7 .7 A / 6 0 — 90V C 25 T09 Q C 2 5 T 1 0 Q SQUARE-PAK FEATU R ES 0 Similar to TO-263AB Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability

C60P03Q

Abstract: C60P04Q
Contextual Info: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 66A/30~40V FEA TUR ES ° Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common Low forward Voltage Drop • Low Power L o s s , High Efficiency • High Surge Capability • 30 Volts through. 60 Volts Types Available

C25P04Q

Abstract: SM3 DIODE C25P03Q 4B20 1A039
Contextual Info: SCHOTTKY BARRIER DIODE C25P03Q C25P04Q 2 7.7 A /30 — 40V 5.30209 FEATURES 3.60142), 15.91.1 4.'?USS) °Similar to TO-247AC TO-3P) Case •&M.ml T53D 5 3 Ï3 W ° Dual Diodes - Cathode Common 2Q.3(.800) r~ 4X 169) 3.7{.145) o Low Forward. Voltage Drop L

Contextual Info: SCHOTTKY BARRIER DIODE C60P05Q C60P06Q 66A/50— 60V FEATURES • Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability • 30 Volts through 60 Volts Types Available

C30P04Q

Abstract: C30P03Q Schottky Diode 40V 5A 10-RE
Contextual Info: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A /30~40V FEATURES 5.312091 4 .7 U 8 5 • Similar to TO-247AC TO-3P) Case • Dual Diodes - Cathode Common • Low Forward Voltage Drop c Low Power Loss, High Efficiency 2.20087)4 - Ì 3.21.1261-1 - J High Surge Capability

Contextual Info: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEATURES « TO-251AA Case »TO-252AA Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts

Contextual Info: C30P09Q C30P10Q 33A/90— 100V SCHOTTKY BARRIER DIODE FEATURES • Similar to TO-247AC TO-3P Case 9 Dual Diodes - Cathode Common <&. • Low Forward Voltage Drop c Low Power Loss, High Efficiency 2.21.0« ? )2 C 1 2 6 ). o High Surge Capability ÿ.SI.OSU MAX „

Contextual Info: SCHOTTKY BARRIER DIODE C30P03Q C30P04Q 33A/30~40V 5.31.209 4.71.185) FEATURES • Similar to TO-247AC TO-3P) Case .626) 0 Dual Diodes - Cathode Common 3.6C.142), — 5.71.224) 5.312081 3.4U34) 20.31.800) 4.3(.169) 3.71.145) o Low Forward Voltage Drop I57(775î

Contextual Info: SCHOTTKY BARRIER DIODE 6VQ03CT 6VQ04CT 6VQ03CTF 6VQ04CTF 6.6A/30—40V FEATURES ° TO-251AA Case «TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common • Low Forward Voltage Drop ° Low Power Loss 6VQ*•CTF TO-252AA 0 High Surge Capability

Contextual Info: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4.4A/90— 100V FEATURES °TO-251AA C as e »TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability ° 30 Volts thru 100 Volts

Contextual Info: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 6 6 A /3 0 ~ 4 0 V FEATU R ES 15.9i.626 b 3.6 .142) irr a i tm « 15.3Ì.0 •Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common 20.3{ 800) 10.7(775) » Low forward Voltage Drop • Low Power Loss, High Efficiency

c60p06q

Abstract: diode 66a C60P05Q
Contextual Info: SCHOTTKY BARRIER DIODE 66A / 50~ 60v cboposq csopobq FEATURES “ Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.7U 85) o Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss, High Efficiency 2.24.087) 3.2U 26). 0.8(.031) M AX • High Surge Capability

u31 diode st

Abstract: C30P04Q
Contextual Info: SCHOTTKY BARRIER DIODE 33A/30— 40V C30P03Q C30P04Q FEATURES 5.3| 2091 4.7« 1 S 5 i °Similar to TO-247AC TO-3P Case I r n I5 .9 (.6 2 6 i :•* 61 142) „ I5 .3t 6 0 2 V 3 41.134) L 5 7 (2 2 4 ) 53Ï5M) ° Dual Diodes - Cathode Common N N - « Low Forward Voltage Drop

Contextual Info: SCHOTTKY BARRIER DIODE 27.7A/5 0 — 60V C25P05Q C25P06Q FEATURES • Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.71.185) . 15.9i.626) . 3 .6 (.1 4 2 l„ ,. i r'i5-&6ffin^3.4U34>D1A 5.71.224) 5.'3(.M8) « Dual Diodes - Cathode Common 20.3(.800) 19.7i.775)

DIODE 6AA

Abstract: 2VQ09CT 2VQ09CTF 2VQ10CT 2VQ10CTF
Contextual Info: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEA TU RES ° TO-251AA Case »TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts

I251 diode

Abstract: I251 252AA 2VQ05CT 2VQ05CTF 2VQ06CT 2VQ06CTF
Contextual Info: SCHOTTKY BARRIER DIODE 2VQ05CT 2VQ06CT 2VQ05CTF 2VQ06CTF 2.2A/50~60V FEATURES • TO-251AA Case • TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common • Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability » 30 Volts thru 100 Volts

C30P10Q

Abstract: C30P09Q ST020 094A
Contextual Info: SCHOTTKY BARRIER DIODE C 30P09Q C 3 0 P 1 0 Q 33 A/9 0 — 100 V FEATURES • Similar to TO-247AC TO-3P Case 5.71.224) ° Dual Diodes - Cathode Common T <£. 4.31169) 3.7(.14S) • Low Forward Voltage Drop c Low Power Loss, High Efficiency 2.2(.087U 3.2(.126>. a

abb bov 660

Abstract: BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas
Contextual Info: A B B SEMI CONDUCTORS AG BOD • Breakover Diodes Version Type Ordering number Bestellnummer Num. de commande BOD 1-04 -05 -06 -07 -08 -09 -10 3 flE P V bo Ibo V V Tvj=25°C Ta =50°C mA A 400 500 600 700 800 900 1000 ± 50 <15 Iavm 1100 1200 1300 1400 1500

schottky diode 43t

Contextual Info: SCHOTTKY BARRIER DIODE C25T05Q C25T06Q 27.7A /50~ 60V 4.8 .189l 4.4Ü73 * SQUARE-PAK f 10.61.4171 I 9.6Ç378) 10.K.398) 8.5U35S 1.81.071)* 1.4(055) 1. "l.2(.047) ^ 0 -0 .3 (.0 12) FEATURES I.4(.055) I nscössp * Similar to TO-263AB Case, Surface, Mount Device

diodo germanio

Abstract: IEC1010-2-032 IEC1010-1 IEC1010-2032 DIODO Germanium display catodo diodo silicio diodo um 1a Germaniumdiode
Contextual Info: Stromzange AC / DC MS 2138 Bedienungsanleitung Mode d’emploi Manuale d’uso by CL-Electronics GmbH 2006 INHALTSVERZEICHNIS • SICHERHEITSINFORMATIONEN • ZEICHENERKLÄRUNG • SICHERHEITSVORKEHRUNGEN • WARTUNG • ALLGEMEINE BESCHREIBUNG • GEHÄUSEBESCHRIFTUNG

thyristor BBC

Abstract: thyristor BBC CS 0,6 thyristor BBC CS BROWN BOVERI protection kippdiode bbc cs 23 thyristor
Contextual Info: BBC BROWN BOVERI Breakover Diode BOD 1 -0 4 BOD 1-42 R Druckschrift/Publication No. C H -E 3.40515.1 D/E/F Ausgabe/Edition September/Septembre 1985 VBo ' 400.4200 V Kippdiode: BOD Breakover Diode: BOD Diode de retournement: BOD M erkm ale Features Particularités

FX2N 64mr manual

Abstract: FX2N-48MT FX2N-128MR mitsubishi plc FX2n-32mt SERIES FX2N-64MT fx2n-48mr FX2N-1PG MANUAL Mitsubishi MELSEC FX2N-80MR FX2N-80MT Mitsubishi MELSEC FX2N-80MR-DS
Contextual Info: HARDWARE MANUAL FX2N SERIES PROGRAMMABLE CONTROLLERS FX2N Series Programmable Controllers ENG Foreword • • • FRE Préface • • • GER • • Dieses Handbuch enthält Texte, Abbildungen und Erläuterungen zur korrekten Installation und Bedienung der FX2N-SPS und sollte vor einer Installation oder einem Einsatz des Gerätes gelesen werden. Die Inhalte müssen verstanden sein.