SYM12 Search Results

JMS11

Abstract: ALY je RMS-2D
Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. LO/RF IF fL-fU CONVERSION LOSS dB LO-RF ISOLATION dB DC-400 DC-600 5.5 5.7 .15 .15 ASK-1-KK81 = ASK-2-KK81 1-600 1-1000 DC-600 DC-1000 5.58 6.79

MCL ask-2

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 6 GHz MHz MODEL NO. LO/RF LO-RF ISOLATION dB fL-fU =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB center f band a Total c Mid-Band Typ. t Range m dBm o L M U L M U – r σ Max. Max. Typ. Min. Typ. Min. Typ. Min.

MCL RMS-30

Abstract: MCL RMS-2
Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY u MODEL NO. FREQUENCY MHz LO/RF IF fL-fU LO-RF ISOLATION dB CONVERSION LOSS dB DC-400 DC-600 5.5 5.7 .15 .15 ASK-1-KK81 = ASK-2-KK81 1-600 1-1000 DC-600 DC-1000 5.58 6.79 .06 .10 7.0 8.0 8.5 9.8

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 6 GHz ALY +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. LO/RF IF fL-fU CONVERSION LOSS dB LO-RF ISOLATION dB DC-400 DC-600 5.5 5.7 .15 .15 ASK-1-KK81 = ASK-2-KK81 1-600 1-1000 DC-600 DC-1000 5.58 6.79

BUJ100LR

Abstract: SC-43A
Contextual Info: BUJ100LR Silicon diffused power transistor Rev. 01 — 12 August 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO-92 3 leads plastic package. 1.2 Features and benefits

BYV32E

Abstract: BYV32E-200 BYV32EB
Contextual Info: BYV32E-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

BYV32E

Abstract: BYV32EB BYV32EB-200 BYV32EB200
Contextual Info: BYV32EB-200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT404 D2PAK surface-mountable plastic package. 1.2 Features and benefits

BYV32E

Abstract: BYV32E-150 BYV32EB
Contextual Info: BYV32E-150 Dual rugged ultrafast rectifier diode, 20 A, 150 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits „ High reverse voltage surge capability

SMA MARKING 1475

Abstract: MurataGRM1555 BGU7003 mmic marking L MMIC marking code 132 MMIC marking code R
Contextual Info: BGU7003 Wideband silicon germanium low-noise amplifier MMIC Rev. 01 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT891

BYV32E

Abstract: BYV32E-100 BYV32EB
Contextual Info: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits „ High reverse voltage surge capability

SAFEA1G57KB0F00

Abstract: SAFEA1G57 B9444 SAFEA1G57K BGU7005 SAFEA1G57KE0F00 SAFEA1G gps jammer GNSS LNA SAW GPS GLONASS filter
Contextual Info: BGU7005 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass Rev. 5 — 29 March 2012 Product data sheet 1. Product profile 1.1 General description The BGU7005 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU7005 requires only one

transistor 832

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

SYM-12

Abstract: MCL SYM TTT167
Contextual Info: Surface Mount SYM-12+ SYM-12 Frequency Mixer Level 7 LO Power +7 dBm 5 to 1200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • low conversion loss, 6.5 dB typ. • excellent L-R isolation, 50 dB typ.; L-I, 46 dB typ. • IF response to DC

MCL RMS-2

Abstract: MCL scm ALY 34 hp r2800 ASK-1-KK81 ASK-2-KK81 DC-250 DC-600 JMS-11X LRMS-11AJ
Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. u ALY-3 u ALY-4 LO/RF IF fL-fU CONVERSION LOSS dB Mid-Band m x σ Max. Total Range Max. _ =JMS ASK-KK81 =RMS = LRMS-J LO-RF ISOLATION, dB LO-IF ISOLATION, dB

Contextual Info: TO -24 7 BYV415W-600P Dual ultrafast power diode 26 August 2014 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 3-lead TO-247 plastic package. 2. Features and benefits • • • • Very low on-state loss Fast switching

Contextual Info: TO -2 20A B BYV34-400 Dual ultrafast power diode 4 June 2014 Product data sheet 1. General description Dual ultrafast power diode in a SOT78 TO-220AB plastic package. 2. Features and benefits • • • • • • Soft recovery characteristic minimizes power consuming oscillations

gps glonass

Abstract: BGU7007 LQW15A jammer circuit GLONASS schematics c band satellite receiver cash dispenser unit cash dispenser
Contextual Info: BGU7007 SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS and Galileo Rev. 1 — 20 May 2011 Product data sheet 1. Product profile 1.1 General description The BGU7007 is a Low Noise Amplifier LNA for GNSS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU7007 requires only one

Contextual Info: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

Contextual Info: PHE13003A NPN power transistor Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO-92 3 leads plastic package. 1.2 Features and benefits

Contextual Info: TO -2 20F BUJ303AX NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits

PHE13003C

Abstract: cfl Self-Oscillating SC-43A hitag 2 hitag application note
Contextual Info: PHE13003C NPN power transistor Rev. 1 — 29 July 2010 Preliminary data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO-92 3 leads plastic package. 1.2 Features and benefits

MCL RMS-2

Abstract: MCL RMS-1w
Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. u ALY-3 u ALY-4 LO/RF IF fL-fU CONVERSION LOSS dB Mid-Band m x σ Max. Total Range Max. _ =JMS ASK-KK81 =RMS = LRMS-J LO-RF ISOLATION, dB LO-IF ISOLATION, dB

MCL RMS-1w

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. u u IF fL-fU CONVERSION LOSS dB Mid-Band m x σ Max. Total Range Max. _ =RMS = LRMS-J LO-RF ISOLATION, dB LO-IF ISOLATION, dB L M U U L M Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SYM-12 Notes: Frequency Mixers • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 50mW b. Peak IF current, 40mA print this page • For Surface Mount Environmental Specifications,