SY 164 B Search Results

Contextual Info: UT54ACS 164/UT54ACTS 164 R adiation-H ardened 8-B it Shift R egisters PINOUTS FEATURES 14-Pin D IP Top View • AND-gated enable/disable serial inpuls • Fully buffered clock and serial inputs • Direct clear • 1.2n radiation-hardened CMOS - Latchup immune

sy 160

Abstract: Scans-048 OC871 gf 122 DSAGER00037 GC101 OC870 OC883 LF 833
Contextual Info: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER ALTER NEUER TYP_ TYP_ BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F< 25 dB OC 870 F< 10 dB LC 810 LC 810 LA 25 LA 25 GC GC GC GC GC GC

Contextual Info: PREM O FC RFI Power Line Filters For equipment using S.M.P.S. For equipment using s.m.p.s. Chassis m o u n tin g dou b le stage filte r. H igh sym m etrical a tte n u a tio n . S w itching m ode p ow e r supplies. General Specifications M axim um op eratin g voltage: 250Vac.

hbx 300 y

Abstract: 34R3437-PW
Contextual Info: SSI 34R3437-PW 5 V 2-Channel Write Coil Driver with Read Buffer Prototype DESCRIPTION FEATURES The SSI 34R3437-PW is a BiCMOS monolithic integrated circuit that includes a read buffer amplifer and a 2-channel, double pulse, write driver designed to drive a transformer coupled ferrite head. The read

BUK455-60A

Abstract: BUK455 BUK455-60B T0220AB cr35 transistor
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D E9 711002b DDma7b Philips Semiconductors PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

DB884H60

Abstract: DB874h120 db882h45 DB884 DB872H120 DB872H83 DB882 DB884h45 DB884H db874H83
Contextual Info: DB870 SERIES OF PANEL ANTENNAS 0 B 880 5 to 15.6 dBd GAIN, 806-960 M Hz This series of directional panel antennas has 15 models with gains from 5 to 15 .6 dBd 7.1 to 1 7 .7 dBi and with five different horizontal beamwidths and three vertical beamwidths. All models are 1 2 " (305 mm)

Nippon capacitors

Contextual Info: H B 5 6 G 1 6 4 E J - 6 B / 7 B 1,048,576-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-551A Z Rev. 1.0 Feb. 20, 1996 Description The HB56G164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

sy 164

Abstract: hc 8414 8255 application 8255 diode sy 164
Contextual Info: Ferrite Cores CR, CRS, SY, T Series For Audio-Visual, TV, & Radio Equipment For CRT Display MATERIAL CHARACTERISTICS Material Initial permeability Saturation magnetic flux density∗ [H = 1194A/m] Remanent flux density∗ µi BS mT Br mT Coercive force∗

C164CI

Abstract: PCA82C251 C164 DIP40 Funkamateur
Contextual Info: DIPmodul 164 Hardware Manual Ausgabe Januar 2002 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG DIPmodul 164 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

Contextual Info: HB56S864ES Series 8,388,608-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-608 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

VSF203

Abstract: selen-gleichrichter OA625 VSF200 selengleichrichter Dioden SY 250 GY123 GY112 VEB Keramische Werke GC301
Contextual Info: d U 3 iu d |d n D g - J 3 i;d |q |D |_ | Dioden G erm anium dio den Type Durdilaßsponnung U f [Y ] Durchlaß­ strom If [mA] SperrSpannung Sperrstrom Ir [; xA] U r [V] max. zuläss. Sperr­ spannung URmax [V] max. zuläss. DurchlaßStrom Bau­ Verwendungszweck

NE98203

Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E
Contextual Info: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high

EDH48256-10

Abstract: EDH48256-12 EDH48256-15 256k x 8 dram
Contextual Info: Electronic Designs Inc. EDH48256-10/12/15 256K x 8 DRAM The EDH48256 is intended fo r use in any application where large quantities o f m em ory are required a n d /o r board space is o f prim e concern. General uses include com puter mem ories, m ilitary, consum er, and autom otive electronics.

PC133-SDRAM

Contextual Info: T O S H IB A THMY7232G1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232G1EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

62083AP

Abstract: 62082AP 62084AP TD62083AP relay dip sy diode sy 166 diode sy 400 8
Contextual Info: TD62081AP/CP/F/AF TD62082AP/CP/F/AF - TD62083AP/CP/F/AF TD62084AP/CP/F/AF SILICON MONOLITHIC BIPOLAR DIGITAL INTEGRATED CIRCUIT 8CH DARLINGTON SINK DRIVER The T D 6 2 0 8 1 A P / C P / F / A F Series are high-voltage, high

Contextual Info: PRELIMINARY M M Q N MT16LD T 164(S), MT16LD(T)464(X)(S) 1 MEG, 4 MEG X 64 DRAM MODULES I DRAM |y | 0 Q 18, 32MEG’ 4 MEG x 64 MEGABYTE, 3.3V, OPTIONAL SELF L £ REFF^ESH, FAST PAGE OR EDO PAGE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC- and industry-standard pinout in a 168-pin,

Contextual Info: Q a v a n te k MSA-0470 M O D A M P Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 70 mil Package Features • • • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 4.0 GHz 12.5 d Bm typical Pi dB at 1.0 GHz

Contextual Info: i riv .039*.003 DIA. TYP. I <h Z r . I00*.003 .200 ROW "A" - 1 R (7.62 T (11.46) .451 .780 (22.35) (22.86) .900 (25.40) 1.000 ( I5.24) .600 ( I7.78) .700 (30.48) 1.200 (53.02) 1.300 (35.56) 1.400 (22 .86 ) .900 (25.40) LOOP (27.94) (32.5 I) 1,280 (35.05)

THMY12N31C70

Contextual Info: TO SH IBA THMY12N31C70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N31C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY7232B0EG-80 F71R D038 CB1196
Contextual Info: T O S H IB A THMY7232B0EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7232B0EG is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of 18 TÒ59SM704FT DRAMs and PLL/Registers on a printed circuit board.

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

Contextual Info: WJ-A33 / SMA33 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE FIGURE: 4.5 dB TYP. +3 dBm OUTPUT LEVEL (TYP.) WIDE POWER SUPPLY RANGE: +8 T O +15 VOLTS Outline Drawings A33 Specifications’* 0200 (5.08) | t

EG 8010

Abstract: D018 D019 D032 THMY721661BEG 1d049
Contextual Info: TOSHIBA T H M Y 7 2 1661 BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: V826A64M24SA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 67,108,864 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 64M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply