SY 164 B Search Results

Contextual Info: UT54ACS 164/UT54ACTS 164 R adiation-H ardened 8-B it Shift R egisters PINOUTS FEATURES 14-Pin D IP Top View • AND-gated enable/disable serial inpuls • Fully buffered clock and serial inputs • Direct clear • 1.2n radiation-hardened CMOS - Latchup immune

sy 164

Abstract: sy 166 sy 160 OC870 sy-162 sy162 sy 103 OC824 SY164 OC872
Contextual Info: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER TYP ALTER TYP NEUER BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F≤ 25 dB OC 870 F≤ 10 dB LC 810 LC 810 LA 25 LA 25 GC 115 GC 116 GC 117 GC 118 GC 121 GC 122

sy 160

Abstract: Scans-048 OC871 gf 122 DSAGER00037 GC101 OC870 OC883 LF 833
Contextual Info: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER ALTER NEUER TYP_ TYP_ BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F< 25 dB OC 870 F< 10 dB LC 810 LC 810 LA 25 LA 25 GC GC GC GC GC GC

VDE 0207, part 4

Abstract: VDE reg 7030 VDE 0207, part 5 VDE 0207 Lapp cable VDE reg 7030 10 g VDE 0207, part 21 VDE 0207, part 20 VDE 0207, part 6 141097
Contextual Info: Prepared by Veronika Kuboth – 25th October 2007 ÖLFLEX Classic 110 SY RS: ÖLFLEX® CLASSIC 110 SY cables are VDE approved control- and connecting cables for flexible use and fixed installation for medium mechanical use. They are for use in dry, damp and wet rooms. They may only be installed

Contextual Info: PREM O FC RFI Power Line Filters For equipment using S.M.P.S. For equipment using s.m.p.s. Chassis m o u n tin g dou b le stage filte r. H igh sym m etrical a tte n u a tio n . S w itching m ode p ow e r supplies. General Specifications M axim um op eratin g voltage: 250Vac.

hbx 300 y

Abstract: 34R3437-PW
Contextual Info: SSI 34R3437-PW 5 V 2-Channel Write Coil Driver with Read Buffer Prototype DESCRIPTION FEATURES The SSI 34R3437-PW is a BiCMOS monolithic integrated circuit that includes a read buffer amplifer and a 2-channel, double pulse, write driver designed to drive a transformer coupled ferrite head. The read

BUK455-60A

Abstract: BUK455 BUK455-60B T0220AB cr35 transistor
Contextual Info: PHILIPS INT ER NA TI O N AL bSE D E9 711002b DDma7b Philips Semiconductors PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: HB56U272E-6B/7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Rev.0.0 Feb.02,1996 Description The HB56U272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed

Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-453 B (Z) Preliminary Rev. 0.2 Jun. 12, 1996 Description The Hitachi HM 5164165A Series, HM 5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance

DB884H60

Abstract: DB874h120 db882h45 DB884 DB872H120 DB872H83 DB882 DB884h45 DB884H db874H83
Contextual Info: DB870 SERIES OF PANEL ANTENNAS 0 B 880 5 to 15.6 dBd GAIN, 806-960 M Hz This series of directional panel antennas has 15 models with gains from 5 to 15 .6 dBd 7.1 to 1 7 .7 dBi and with five different horizontal beamwidths and three vertical beamwidths. All models are 1 2 " (305 mm)

Nippon capacitors

Contextual Info: H B 5 6 G 1 6 4 E J - 6 B / 7 B 1,048,576-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-551A Z Rev. 1.0 Feb. 20, 1996 Description The HB56G164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

673E

Contextual Info: HB56UW1673E-6A/7A 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-575A Z Rev. 1.0 Dec. 24, 1996 Description The HB56UW1673E belongs to the 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The

D11D0

Abstract: MAX177 MAX177CNG MAX177CWG MAX177ENG MAX177EWG MAX177MRG
Contextual Info: y n y j x i y n CMOS 10-B it A / D Converter w ith Track-and-Hotd _ Features T h e M A X1 77 is a c o m p lete C M O S sa m p lin g 10-bit a n a lo g -to -d ig ita l converter A D C that co m b in e s an o n -c h ip tra ck -a n d -h o ld and voltage reference along

sy 164

Abstract: hc 8414 8255 application 8255 diode sy 164
Contextual Info: Ferrite Cores CR, CRS, SY, T Series For Audio-Visual, TV, & Radio Equipment For CRT Display MATERIAL CHARACTERISTICS Material Initial permeability Saturation magnetic flux density∗ [H = 1194A/m] Remanent flux density∗ µi BS mT Br mT Coercive force∗

Contextual Info: 6 7 8 FUNCTION KE Y 11 S E E S H EET 2 / 163.70 REF, 6.445 I40.97±0.20 5.55±.008 molex l l l l l l l l l l l l l l l l l l l l l l l l l l l l PEG "A" 1.27, TYP .05 ' 11.45 ’ 0 .45’ \ \ \ - p EG "B" 3.18 TYP. .125 6.35 .250 TYP. 36.83 1.45 WHEN L A T C H CLOSED

C164CI

Abstract: PCA82C251 C164 DIP40 Funkamateur
Contextual Info: DIPmodul 164 Hardware Manual Ausgabe Januar 2002 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG DIPmodul 164 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

Contextual Info: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply

Contextual Info: HB56S864ES Series 8,388,608-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-608 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

colour television block diagram

Abstract: lzl 60 c TDA2523 TDA2523Q
Contextual Info: T D A25 23 TDA 25 23 Q COLOUR DEMODULATOR CO MB IN AT IO N T h e TD A 2523 I s an in te g r a te d sy n ch ro n o u s d e m o d u la to r co m b in atio n f o r c o lo u r te le v is io n r e c e i v e r s in c o r p o r a tin g th e fo llo w in g fu n c tio n s :

Nippon capacitors

Contextual Info: H B 56U 472E -6B /7B /8B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-554 Z Preliminary Rev. 0.0 Mar. 09, 1996 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

raychem TD

Abstract: dash 2b-5 10D45
Contextual Info: RED INDICATES ORIGINAL DATA a W T A D B IN THIS m D HffNT I S PfiDWIETAJn' TD W H L IL H B-ECTBDN1CI INC. AW WALL NOT BE OISCLDSH], CDPIB] DR I A S POB P f m i P O f T OR MANUFATTO* WITHOUT EXPOEss M i r r a i p s w is s id n . N T ABL E 1 DASH NO CABLE S

sy 171

Abstract: C143 T transistor DP83223 27C020 AD30 PM3351 R177 XC9572 c124 npn R166
Contextual Info: E L A N 1 x1 0 0 : 2 P ort 1 0 /1 0 0 M bit/s S w itch SRAM, Config Resistors, LED's PM3351 Port 1 Sheet 4 Sheet 3 Physical Layer Port 1 Sheet 5 Clocks, PCIBus, EPROM Sheet 2 PM3351 Port 2 Bypass caps, Regulator Physical Layer Port 2 SRAM, Config Resistors, LED's

Contextual Info: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply