SWITCHING N-CHANNEL POWER MOS FET 50A Search Results

NP82N06ELC

Abstract: MP-25 NP82N06CLC NP82N06DLC
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06CLC, NP82N06DLC, NP82N06ELC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

2SK3108

Abstract: nec 2501
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

2SK3110

Abstract: d1333
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

2SK3110

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3110 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

PA1572

Abstract: C10535E C10943X MEI-1202 PT2320 PA1572BH
Contextual Info: DATA SHEET Compound Field Effect Power Transistor µPA1572B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The µPA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and

2SK3108

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC

Contextual Info: 2SK2904-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-3P High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

s5850

Abstract: l0925
Contextual Info: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

MJ800

Contextual Info: 2SK3364-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3216

Contextual Info: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

mosfet to-220ab

Abstract: mosfet 4800 2SK3216-01 2SK3216
Contextual Info: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3364-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3363-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK3216-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters

D1403

Contextual Info: NEC / MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES l Channel Temperature 175 Degree Rated 0 Super Low On-state Resistance

2sk2903

Contextual Info: 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3217-01MR

Contextual Info: 2SK3217-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

Contextual Info: 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET TO-220F15 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications 2.54 Switching regulators UPS Uninterruptible Power Supply DC-DC converters

2SK3217-01MR

Abstract: mosfet 4800 TO220F15
Contextual Info: 2SK3217-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators 2.54 UPS Uninterruptible Power Supply DC-DC converters

diode 2JC

Abstract: 4S125
Contextual Info: fcilE T> m 4ltclhEDS DD13t>53 75b « H i m PM4550N- Preliminary HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING • FEATURES • Equipped with Power MOS FET • Low On-Resistance • High Speed Switching

transistor BU 1037

Abstract: PA1572
Contextual Info: DATA SHEET Compound Field Effect Power Transistor _ / i P A 1 5 7 2 B N-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The /¿PA1572B is N -channel Power MOS FET Array in millimeters that built in 4 circuits designed for solenoid, motor and

A2792

Abstract: PA2792GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2792GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2792GR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

A2792

Abstract: PA2792AGR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2792AGR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μ PA2792AGR is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application. 8 5 N-channel 1 : Source 1

NP10N45DHB

Abstract: MP-25 NP10N45CHB NP10N45EHB
Contextual Info: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP10N45CHB,NP10N45DHB,NP10N45EHB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.