SWITCH DIODE 30 VF Search Results

Contextual Info: DSB 60 C 30 PB advanced V RRM = 30 V I FAV = 2x 30 A V F = 0.49 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power

A 0503

Contextual Info: MSWSE-005-15 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-005-30 is a PIN diode SPST switch element designed for medium incident power applications, up to 4W C.W. It has low insertion loss and medium isolation below 6.0 GHz.

Contextual Info: MSWSE-020-10 Silicon PIN Diode Switch Element 0503 Molded Plastic DFN Package Description Features The MSWSE-020-10 is a PIN diode SPST switch element designed for medium incident power applications, up to 30 W CW It has low insertion loss and medium isolation below 1 GHz.

Contextual Info: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give

Contextual Info: DSA 60 C 60 HB tentative V RRM = 60 V I FAV = 2x 30 A V F = 0.65 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power

Contextual Info: DSA 30 C 150 HB advanced V RRM = 150 V I FAV = 2x 15 A V F = 0.74 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS

Contextual Info: DSA 30 C 45 HB advanced V RRM = 45 V I FAV = 2x 15 A V F = 0.62 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power

Contextual Info: DSA 60 C 45 HB advanced V RRM = 45 V I FAV = 2x 30 A V F = 0.66 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power

A55167

Abstract: MSWSH-100-30
Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA

Contextual Info: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give

Contextual Info: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give

Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA

MSWSS-040-30

Contextual Info: MSWSS-040-30 PIN DIODE SHUNT SWITCH ELEMENT 2012 Non-Hermetic Description Features Surface mount medium power series shunt switch. The shunt device is bases on Metelics StripLine PIN which give broad band high isolation. This device can be surface mounted onto a PC board to give

diode zener d1

Contextual Info: MSWSH-100-30 PIN Diode Shunt Switch Element 2 1 1 2 CM22 Heat sink is cathode, epoxy encapsulation Description Features A broadband, high linearity, high power shunt switch element in a 10 x 4 mm bolt channel metal package. This device is designed for WiMax, Wibro, WLAN, TD-SCDMA

Contextual Info: CLI840 CLI850 CLI860 CLI870 Optical Switches GENERAL DESCRIPTIONS — This optical switch se­ ries couples a gallium arsenide infrared emitting diode and a silicon darlington phototransistor, for high sensor currents. Maximum sensor voltage of 30 volts allows

KDS113

Contextual Info: SEMICONDUCTOR KDS113 TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES E Small Package. M B M Small Total Capacitance : CT=1.2pF Max. . Low Series Resistance : rS=0.6 (Typ.). SYMBOL RATING UNIT Reverse Voltage VR 30 V

Contextual Info: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150

Contextual Info: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150

JDP2S02ACT

Contextual Info: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit: mm + 0.02 0.38 - 0.03 UHF~VHF Band RF Switch Applications Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature

HP4291A

Abstract: JDP4P02AT
Contextual Info: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150

JDP4P02AT

Abstract: HP4291A
Contextual Info: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150

Contextual Info: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit:mm UHF~VHF Band RF Switch Applications 1 2 0.05±0.03 0.6±0.05 0.5±0.03 Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature

HP4291A

Abstract: JDP2S02ACT
Contextual Info: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit:mm UHF~VHF Band RF Switch Applications 1 2 Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150 °C Tstg −55~150

HP4291A

Abstract: JDP4P02AT
Contextual Info: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm Low series resistance: rs = 1.0 Ω typ. • Low capacitance: CT = 0.3 pF (typ.) Symbol Rating Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature