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FM260

Abstract: FM2100 FM220 FM230 FM240 FM250
Contextual Info: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

FM220A

Abstract: FM230A FM240A FM250A FM260A
Contextual Info: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

Contextual Info: KSC2752 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VcBO Symbol 500 V Collector-Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter.

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: Bulletin I27308 01/06 GB10RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 12A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA tsc > 10μs @ TJ =150°C • HEXFRED Antiparallel Diode with Ultrasoft

Contextual Info: Bulletin I27306 01/06 GB15RF60K IGBT PIM MODULE VCES = 600V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF IC = 17A @ TC=80°C • 10 s Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

swiching full bridge

Abstract: 20MT120UFAPBF 20MT120UFa IGBT20
Contextual Info: 20MT120UFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

k3525

Abstract: 8205 datasheet GB10RF120K ice25 ti marking AAB
Contextual Info: Bulletin I27152 Rev.A 07/03 GB10RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

IR E78996

Abstract: GB25RF120K
Contextual Info: Bulletin PD - 94552 rev.A 05/03 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

GB15RF120K

Abstract: fred 255
Contextual Info: Bulletin PD - 94571 rev.A 05/03 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • • • • • Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics

law 4933

Abstract: E78996 rectifier module transistor P2D 9-04
Contextual Info: GB20RF60K Vishay High Power Products IGBT PIM Module, 21 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

GB30RF60K

Abstract: single phase inverter
Contextual Info: GB30RF60K Vishay High Power Products IGBT PIM Module, 27 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

GB15RF60K

Contextual Info: GB15RF60K Vishay High Power Products IGBT PIM Module, 17 A FEATURES • • • • • • • • • • • ECONO2 PIM Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

Contextual Info: VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft

GB10RF60K

Abstract: E78996 rectifier module
Contextual Info: GB10RF60K Vishay High Power Products IGBT PIM Module, 12 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

OF IGBT

Abstract: GB50RF60K
Contextual Info: GB50RF60K Vishay High Power Products IGBT PIM Module, 48 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft

ci 4538

Abstract: E78996 rectifier module GB15RF120K ultrafast swiching transistor swiching 286
Contextual Info: GB15RF120K Vishay High Power Products IGBT PIM Module, 15 A FEATURES • • • • • • • • • • • ECONO2 PIM PRODUCT SUMMARY Low VCE on non punch through IGBT technology Low diode VF 10 µs short circuit capability Square RBSOA HEXFRED antiparallel diode with ultrasoft