SWICHING DIODE Search Results

1N914

Contextual Info: 1N914 FAST SWITCHING DIODE DO - 35 FEATURES ● High reliability ● High conductance .020 TYP. 0.51 ● Fast switching speed (trr≤4ns) 1.083(27.5) MIN APPLICATIONS ● For general purpose swiching applications .150(3.8) MAX CONSTRUCTION .079 MAX (2.0)

LL914

Contextual Info: LL914 FAST SWITCHING DIODE FEATURES ● High reliability DL - 35 ● High conductance ● Fast switching speed trr≤4ns APPLICATIONS ● For general purpose swiching applications .063(1.6) .055(1.4) .020(0.5) .012(0.3) CONSTRUCTION .020(0.5) .012(0.3) .146(3.7)

LL914

Contextual Info: LL914 FAST SWITCHING DIODE FEATURES ● High reliability DL - 35 ● High conductance ● Fast switching speed trr≤4ns APPLICATIONS ● For general purpose swiching applications .063(1.6) .055(1.4) .020(0.5) .012(0.3) CONSTRUCTION .020(0.5) .012(0.3) .146(3.7)

1N914

Contextual Info: 1N914 FAST SWITCHING DIODE DO - 35 FEATURES ● High reliability ● High conductance .020 TYP. 0.51 ● Fast switching speed (trr≤4ns) 1.083(27.5) MIN APPLICATIONS ● For general purpose swiching applications .150(3.8) MAX CONSTRUCTION .079 MAX (2.0)

Contextual Info: ☆GO-Compatible ◆Synchronous Step-Up & Down DC / DC Controller ◆Input Voltage Range : 2.0V ~ 10.0V ◆Output Voltage Externally Set-Up ◆Oscillation Frequency: 300kHz ±15% ◆Maximum Duty Cycle : 78% (TYP.) ◆PWM, PWM/PFM Swiching Control ◆Synchronous Rectification Control

swiching

Abstract: BAS16-03W swiching transistor diode swiching DIODE MARKING 1M swiching diode
Contextual Info: Diodes SMD Type SILICON SWICHING DIODE BAS16-03W SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features For high-speed Switching applications +0.1 2.6-0.1 0.375 +0.05 0.1-0.02 0.475 1.0max Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: BAV102 High Voltage, General Purpose Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to

FAIRCHILD DIODE

Abstract: FAIRCHILD DIODE SOD80
Contextual Info: BAV103 High Voltage, General Purpose Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to

Contextual Info: ☆GO-Compatible ◆2 ch DC/DC Controller Step-Down & Down ◆Input Voltage Range :2.0V ~ 10.0V ◆Output Voltage Externally Set-Up ◆Oscillation Frequency :300kHz (Accuracy±15%) ◆Maximum Duty Cycle : 100% ◆PWM, PWM/PFM Swiching Control ◆High Efficiency

Contextual Info: Data Sheet Schottky Barrier Diode RB078B30S Dimensions Unit : mm Applications Swiching power supply Land size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.0 0.5±0.1 C0.5 1.5±0.3 5.1±0.2 0.1 1.6 0.65±0.1 （2） （3） 2.5 0.75 0.9 Construction

FAIRCHILD DIODE

Contextual Info: FDLL3595 High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

Contextual Info: Data Sheet Schottky Barrier Diode RB078B30S lApplications Swiching power supply lDimensions Unit : mm lLand size figure (Unit : mm) 6.0 2.3±0.2 0.1 6.0 0.5±0.1 C0.5 1.5±0.3 5.1±0.2 0.1 1.6 0.65±0.1 （2） （3） 2.5 0.75 0.9 lConstruction Silicon epitaxial planer

Contextual Info: TK13H90A1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type MACHⅡ π-MOSIV TK13H90A1 Swiching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.78Ω (typ.) z High forward transfer admittance : |Yfs| = 11S (typ.)

FCA50CC50

Abstract: RL4R FBA50CA45 FBA50CA50 FBA75CA45 FBA75CA50 FCA75CC50 SF100 107506
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

TK130F06K3

Abstract: K130F06K toshiba transistor date code marking K130F
Contextual Info: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)

w241 mosfet

Abstract: w241 ta3130 FW241
Contextual Info: Ordering number : ENN6939 FW241 N-Channel Silicon MOSFET FW241 Ultrahigh-Speed Swiching Applications Features This composite device allows high density mounting by unit : mm incorporating two MOSFET chips in one package that 2129 feature low on-resistance, ultrahigh switching speed, and

Contextual Info: TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 220 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)

"MOSFET Module"

Abstract: SF150BA50
Contextual Info: MOSFET MODULE SF150BA50 UL;E76102 M SF150BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

swiching

Contextual Info: Diodes SMD Type SILICON SWICHING DIODE BAS140WS SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features General purpose diodes for high-speed switching +0.1 2.6-0.1 1.0max Circuit protection Voltage clamping 0.375 0.475 +0.05 0.1-0.02

FCA50CC50

Abstract: IG2U
Contextual Info: MOSFET MODULE FCA50CC50 UL;E76102 （M） FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.（2 devices are serial connected with a fast recovery diode （trr≦100ns）reverse connected across each MOSFET.） The mounting base of the

smd diode S6

Abstract: smd schottky diode s6 MARKING S6 s6 schottky SMD MARKING s6 smd schottky diode marking s6 smd schottky diode s6 05 smd diode .S6 swiching transistor 1PS76SB62
Contextual Info: Diodes SMD Type Schottky barrier Diodes 1PS76SB62 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Ultra high swiching speed +0.1 2.6-0.1 Very low capacitance High breakdown voltage 0.475 1.0max 0.375 +0.05 0.1-0.02 Guard ring protected

FAIRCHILD DIODE

Contextual Info: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

100A 1000V mosfet

Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

FBA75CA50

Abstract: "MOSFET Module" FBA75CA45
Contextual Info: MOSFET MODULE FBA75CA45/50 UL;E76102 M FBA75CA45/50 is a dual power MOSFET module designed for fast swiching The applications of high voltage and current. 2 devices are serial connected. mounting base of the module is electrically isolated from semiconductor elements for